1 × 4 space switching and simultaneous all-optical wavelength conversion at 2.488Gbit/s using a single monolithically integrated multiwavelength laser

A novel InGaAs/InGaAsP/InP integrated multiwavelength grating cavity laser is presented, which has been used to demonstrate space switching and simultaneous all-optical wavelength conversion at bit rates of 2.488 Gbit/s. This has been achieved using a single monolithically integrated device without the need for post-filtering to separate the converted signal from the input.

Wavelength conversion, regeneration and tone manipulation using integrated semiconductor lasers and amplifiers

An integrated semiconductor optical amplifier/distributed feedback (SOA/DFB) laser that show promise as a simple all-optical wavelength conversion device together with useful simultaneous functions such as 2R regeneration and the ability to remove a wavelength identifying tone is presented. Wavelength conversion performance at 20Gb/s and 40Gb/s can be obtained with this laser.

All-optical 3R regeneration and wavelength conversion in an integrated SOA/DFB laser: Experiment and simulation

The simultaneous all optical 3R regeneration and format conversion in a simple, single integrated device was examined. The integrated device consisted of a semiconductor optical fiber (SOA) monolithically integrated with a distributed feedback (DFB) laser. Gain saturation was employed for the transmission of a data signal regenerated all-optically in the laser/amplifier device. The regeneration of the electrically filtered eye diagrams was observed by noise removal and extinction ratio-improvement by the device.

Resonant-cavity LED transceiver arrays for optical wireless communication

155Mb/s operation of an optical wireless link is achieved by using the spectral characteristics and angular emission spectra of a 7-element tracking array of 980nm RC-LEDs. Preliminary results show extension to 200 Mb/s/channel. © 2006 Optical Society of America.

Nanotube-based passively mode-locked Raman laser

We demonstrate passive mode-locking of a Raman fiber laser using a nanotube-based saturable absorber. The normal dispersion cavity generates highly-chirped 500 ps pulses that are compressed down to 2 ps, with 1.4 kW peak power. © 2011 OSA.

1.5 GHz picosecond pulse generation from a monolithic waveguide laser with a graphene-film saturable output coupler

We fabricate a saturable absorber mirror by coating a graphenefilm on an output coupler mirror. This is then used to obtain Q-switched mode-locking from a diode-pumped linear cavity channel waveguide laser inscribed in Ytterbium-doped Bismuthate Glass. The laser produces 1.06 ps pulses at ∼1039 nm, with a 1.5 GHz repetition rate, 48% slope efficiency and 202 mW average output power. This performance is due to the combination of the graphene saturable absorber and the high quality optical waveguides in the laser glass. © 2013 Optical Society of America.

Modeling bipolar power semiconductor devices gachovska

This book presents physics-based models of bipolar power semiconductor devices and their implementation in MATLAB and Simulink. The devices are subdivided into different regions, and the operation in each region, along with the interactions at the interfaces which are analyzed using basic semiconductor physics equations that govern their behavior. The Fourier series solution is used to solve the ambipolar diffusion equation in the lightly doped drift region of the devices. In addition to the external electrical characteristics, internal physical and electrical information, such as the junction voltages and the carrier distribution in different regions of the device, can be obtained using the models. Table of Contents: Introduction to Power Semiconductor Device Modeling/Physics of Power Semiconductor Devices/Modeling of a Power Diode and IGBT/IGBT Under an Inductive Load-Switching Condition in Simulink/Parameter Extraction. © 2013 by Morgan & Claypool.

Superfluorescence in semiconductor lasers

An analysis is made of the conditions for the generation of superfluorescence pulses in an inverted medium of electron-hole pairs in a semiconductor. It is shown that strong optical amplification in laser semiconductor amplifiers characterised by αL ≫ 1 leads to suppression of phase re-laxation of the medium during the initial stages of evolution of superfluorescence and to formation of a macroscopic dipole from electron-hole pairs. Cooperative emission of radiation in this system results in generation of a powerful ultrashort pulse of the optical gain, which interacts coherently with the semiconductor medium. It is shown that coherent pulsations of the optical field, observed earlier by the author in Q-switched semiconductor lasers, are the result of superfluorescence and of the coherent interaction between the optical field and the medium.

Superfluorescence in semiconductor lasers

An analysis is made of the conditions for the generation of superfluorescence pulses in an inverted medium of electron-hole pairs in a semiconductor. It is shown that strong optical amplification in laser semiconductor amplifiers characterised by αL ≫ 1 (α is the small-signal gain and L is the amplifier length) leads to suppression of phase relaxation of the medium during the initial stages of evolution of superfluorescence and to formation of a macroscopic dipole from electron - hole pairs. Cooperative emission of radiation in this system results in generation of a powerful ultrashort pulse of the optical gain, which interacts coherently with the semiconductor medium. It is shown that coherent pulsations of the optical field, observed earlier by the author in Q-switched semiconductor lasers, are the result of superfluorescence and of the coherent interaction between the optical field and the medium.

DIRECT DETECTION OF PICOSECOND PULSES EMITTED BY AN INJECTION LASER WITH ACTIVE MODE LOCKING.

An Agat-SF linear-scan streak image-converter camera was used to record output pulses of 2. 7 psec duration generated by an injection laser with an external dispersive resonator operated in the active mode-locking regime. The duration of the pulses was determined by the reciprocal of the spectral width and the product of the duration and the spectral width was 0. 30.

Nanotube-based passively mode-locked Raman laser

We demonstrate passive mode-locking of a Raman fiber laser using a nanotube-based saturable absorber. The normal dispersion cavity generates highly-chirped 500 ps pulses that are compressed down to 2 ps, with 1.4 kW peak power. © OSA/ CLEO 2011.

Chirp-enhanced direct modulation of a monolithic sub-Terahertz dual laser transmitter

A technique enabling 10 Gbps data to be directly modulated onto a monolithic sub-THz dual laser transmitter is proposed. As a result of the laser chirp, the logical zeros of the resultant sub-THz signal have a different peak frequency from that of the logical ones. The signal extinction ratio is therefore enhanced by suppressing the logical zeros with a filter stage at the receiver. With the aid of the chirp-enhanced filtering, an improved extinction ratio can be achieved at moderate modulation current. Hence, 10 GHz modulation bandwidth of the transmitter is predicted without the need for external modulators. In this paper, we demonstrate the operational principle by generating an error-free (bit error rate less than 10-9) 100 Mbps Manchester encoded signal with a centre frequency of 12 GHz within the bandwidth of an envelope detector, whilst direct modulation of a 100 GHz signal at data rates of up to 10 Gbps is simulated by using a transmission line model. This work could be a key technique for enabling monolithic sub-THz transmitters to be readily used in high speed wireless links. © 2013 IEEE.

Pulsed laser writing of holographic nanosensors

Tuneable optical sensors have been developed to sense chemical stimuli for a range of applications from bioprocess and environmental monitoring to medical diagnostics. Here, we present a porphyrin-functionalised optical sensor based on a holographic grating. The holographic sensor fulfils two key sensing functions simultaneously: it responds to external stimuli and serves as an optical transducer in the visible region of the spectrum. The sensor was fabricated via a 6 nanosecond-pulsed laser (350 mJ, λ = 532 nm) photochemical patterning process that enabled a facile fabrication. A novel porphyrin derivative was synthesised to function as the crosslinker of a polymer matrix, the light-absorbing material, the component of a diffraction grating, as well as the cation chelating agent in the sensor. The use of this multifunctional porphyrin permitted two-step fabrication of a narrow-band light diffracting photonic sensing structure. The resulting structure can be tuned finely to diffract narrow-band light based on the changes in the fringe spacing within the polymer and the system's overall index of refraction. We show the utility of the sensor by demonstrating its reversible colorimetric tuneability in response to variation in concentrations of organic solvents and metal cations (Cu 2+ and Fe2+) in the visible region of the spectrum (λmax ≈ 520-680 nm) with a response time within 50 s. Porphyrin-functionalised optical sensors offer great promise in fields varying from environmental monitoring to biochemical sensing to printable optical devices. This journal is © the Partner Organisations 2014.

FM mode-locking in monolithic semiconductor lasers

FM mode-locking in monolithic semiconductor lasers is investigated for the first time, using a travelling-wave laser model. The effects of phase modulation depth and non-zero alpha factor on pulse quality and pulse-width are discussed. © 2004 Optical Society of America.