Short-channel polymer field-effect-transistor fabrication using spin-coating-induced edge template and ink-jet printing

A method to fabricate polymer field-effect transistors with submicron channel lengths is described. A thin polymer film is spin coated on a prepatterned resist with a low resolution to create a thickness contrast in the overcoated polymer layer. After plasma and solvent etching, a submicron-sized line structure, which templates the contour of the prepattern, is obtained. A further lift-off process is applied to define source-drain electrodes of transistors. With a combination of ink-jet printing, transistors with channel length down to 400 nm have been fabricated by this method. We show that drive current density increases as expected, while the on/off current ratio 106 is achieved. © 2005 American Institute of Physics.

Monitoring tunnel deformation induced by close-proximity bored tunneling using distributed optical fiber strain measurements

The paper describes the use of optical fiber Brillouin Optical Time Domain Reflectometry (BOTDR) to monitor the strain distribution in an existing tunnel while a twin tunnel was bored at close-proximity. The twin circular bored tunnels between Serangoon and Bartley stations on the new Circle Line Stage 3 subway in Singapore were constructed at close-proximity to avoid underpinning the foundations of adjacent buildings. The minimum clear separation of the two tunnels is 2.3m (0.4 times the tunnel diameter). The Outer Tunnel was constructed first, followed by the Inner Tunnel, with the earth-pressure balance tunnel boring machines maintained at a minimum of 100m apart. In this trial application of BOTDR, the strain distribution along the Outer Tunnel was measured, in order to monitor its deformation due to the boring of the Inner Tunnel at close-proximity. The aim of the trial application was to determine the practicality of this monitoring method for future use in 'live' tunnels. This paper compares the measurements obtained from optical fiber BOTDR with conventional methods of tunnel monitoring and describes preliminary installation and workmanship guidelines derived from lessons learnt during this trial. © 2007 ASCE.

Theoretical investigation of CoSi2/Si1-xGex detectors: Influence of a Si tunneling barrier on the electro-optical characteristics

We present a theoretical investigation of the influence of a non-reacted Si layer on the transport and optical properties of CoSi2/Si1-xGex Schottky barrier diodes grown from Co/Si/Si1-xGex systems. The presence of this layer reduces the effect of the lowering of the Schottky barrier height which would be expected in a CoSi2/Si1-xGex. However, due to the small thickness of this Si layer, the charge carriers are able to tunnel through it. This tunneling process allows for a significant lowering of the Schottky barrier height and therefore an extension of the detection regime into the infrared. © 1996 American Institute of Physics.