Understanding and navigating industrial emergence

Industrial emergence is a broad and complex domain, with relevant perspectives ranging in scale from the individual entrepreneur and firm with the business decisions and actions they make to the policies of nations and global patterns of industrialisation. The research described in this article has adopted a holistic approach, based on structured mapping methods, in an attempt to depict and understand the dynamics and patterns of industrial emergence across a broad spectrum from early scientific discovery to large-scale industrialisation. The breadth of scope and application has enabled a framework and set of four tools to be developed that have wide applicability. The utility of the approaches has been demonstrated through case studies and trials in a diverse range of industrial contexts. The adoption of such a broad scope also presents substantial challenges and limitations, with these providing an opportunity for further research. © IMechE 2013.

Progress in the understanding of Ni silicide formation for advanced MOS structures

Metallic silicides have been used as contact materials on source/drain and gate in metal-oxide semiconductor (MOS) structure for 40 years. Since the 65 nm technology node, NiSi is the preferred material for contact in microelectronic due to low resistivity, low thermal budget, and low Si consumption. Ni(Pt)Si with 10 at.% Pt is currently employed in recent technologies since Pt allows to stabilize NiSi at high temperature. The presence of Pt and the very low thickness (<10 nm) needed for the device contacts bring new concerns for actual devices. In this work, in situ techniques [X-ray diffraction (XRD), X-ray reflectivity (XRR), sheet resistance, differential scanning calorimetry (DSC)] were combined with atom probe tomography (APT) to study the formation mechanisms as well as the redistribution of dopants and alloy elements (Pt, Pd.) during the silicide formation. Phenomena like nucleation, lateral growth, interfacial reaction, diffusion, precipitation, and transient phase formation are investigated. The effect of alloy elements (Pt, Pd.) and dopants (As, B.) as well as stress and defects induced by the confinement in devices on the silicide formation mechanism and alloying element redistribution is examined. In particular APT has been performed for the three-dimensional (3D) analysis of MOSFET at the atomic scale. The advances in the understanding of the mechanisms of formation and redistribution are discussed. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Understanding the cascode switching process

Cascode circuits are useful for driving normally-on wide-bandgap devices, but the switching process must be properly understood to optimise their design. Little detailed consideration has previously been given to this. This paper proposes an idealised mathematical description of the cascode switching process, which is used to show that the stray inductance between the two devices plays a critical role in switching. This idealised model is used to propose methods for optimising cascode performance in different applications. © 2013 IEEE.

High-level scene structure using visibility and occlusion

We demonstrate a new method for extracting high-level scene information from the type of data available from simultaneous localisation and mapping systems. We model the scene with a collection of primitives (such as bounded planes), and make explicit use of both visible and occluded points in order to refine the model. Since our formulation allows for different kinds of primitives and an arbitrary number of each, we use Bayesian model evidence to compare very different models on an even footing. Additionally, by making use of Bayesian techniques we can also avoid explicitly finding the optimal assignment of map landmarks to primitives. The results show that explicit reasoning about occlusion improves model accuracy and yields models which are suitable for aiding data association. © 2011. The copyright of this document resides with its authors.