Optimal displacement mechanisms beneath shallow foundations on linear-elastic perfectly plastic soil

An energy method for a linear-elastic perfectly plastic method utilising the von Mises yield criterion with associated flow developed in 2013 by McMahon and co-workers is used to compare the ellipsoidal cavity-expansion mechanism, from the same work, and the displacement fields of other research by Levin, in 1995, and Osman and Bolton, in 2005, which utilise the Hill and Prandtl mechanisms respectively. The energy method was also used with a mechanism produced by performing a linear-elastic finite-element analysis in Abaqus. At small values of settlement and soil rigidity the elastic mechanism provides the lowest upper-bound solution, and matches well with finite-element analysis results published in the literature. At typical footing working loads and settlements the cavity-expansion mechanism produces a more optimal solution than the displacement fields within the Hill and Prandtl mechanisms, and also matches well with the published finite-element analysis results in this range. Beyond these loads, at greater footing settlements, or soil rigidity, the Prandtl mechanism is shown to be the most appropriate.

FEC-free 50 m 1.5 Gb/s plastic optical fibre link using CAP modulation for home networks

LED-based carrierless amplitude and phase modulation is investigated for a multi-gigabit plastic optical fibre link. An FPGA-based 1.5 Gbit/s error free transmission over 50 m standard SI-POF using CAP64 is achieved, providing 2.9 dB power margin without forward error correction. © 2012 Optical Society of America.

Atom probe tomography for advanced metallization

In microelectronics, the increase in complexity and the reduction of devices dimensions make essential the development of new characterization tools and methodologies. Indeed advanced characterization methods with very high spatial resolution are needed to analyze the redistribution at the nanoscale in devices and interconnections. The atom probe tomography has become an essential analysis to study materials at the nanometer scale. This instrument is the only analytical microscope capable to produce 3D maps of the distribution of the chemical species with an atomic resolution inside a material. This technique has benefit from several instrumental improvements during last years. In particular, the use of laser for the analysis of semiconductors and insulating materials offers new perspectives for characterization. The capability of APT to map out elements at the atomic scale with high sensitivity in devices meets the characterization requirements of semiconductor devices such as the determination of elemental distributions for each device region. In this paper, several examples will show how APT can be used to characterize and understand materials and process for advanced metallization. The possibilities and performances of APT (chemical analysis of all the elements, atomic resolution, planes determination, crystallographic information...) will be described as well as some of its limitations (sample preparation, complex evaporation, detection limit, ...). The examples illustrate different aspect of metallization: dopant profiling and clustering, metallic impurities segregation on dislocation, silicide formation and alloying, high K/metal gate optimization, SiGe quantum dots, as well as analysis of transistors and nanowires. © 2013 Elsevier B.V. All rights reserved.