TRANSIENT SCANNING ELECTRON BEAM ANNEALING METHODS USED TO STUDY DIFFUSION AND DEFECTS IN IMPLANTED SILICON.

Rapid thermal annealing of arsenic and boron difluoride implants, such as those used for source/drain regions in CMOS, has been carried out using a scanning electron beam annealer, as part of a study of transient diffusion effects. Three types of e-beam anneal have been performed, with peak temperatures in the range 900 -1200 degree C; the normal isothermal e-beam anneals, together with sub-second fast anneals and 'dual-pulse' anneals, in which the sample undergoes an isothermal pre-anneal followed by rapid heating to the required anneal temperature is less than 0. 5s. The diffusion occuring during these anneal cycles has been modelled using SPS-1D, an implant and diffusion modelling program developed by one of the authors. This has been modified to incorporate simulated temperature vs. time cycles for the anneals. Results are presented applying the usual equilibrium clustering model, a transient point-defect enhancement to the diffusivity proposed recently by Fair and a new dynamic clustering model for arsenic. Good agreement with SIMS measurements is obtained using the dynamic clustering model, without recourse to a transient defect model.

Low partial pressure chemical vapor deposition of graphene on copper

A systematic study of the Cu-catalyzed chemical vapor deposition of graphene under extremely low partial pressure is carried out. A carbon precursor supply of just P CH4∼ 0.009 mbar during the deposition favors the formation of large-area uniform monolayer graphene verified by Raman spectra. A diluted HNO 3 solution is used to remove Cu before transferring graphene onto SiO 2/Si substrates or carbon grids. The graphene can be made suspended over a ∼12 μm distance, indicating its good mechanical properties. Electron transport measurements show the graphene sheet resistance of ∼0.6 kΩ/□ at zero gate voltage. The mobilities of electrons and holes are ∼1800 cm 2/Vs at 4.2 K and ∼1200 cm 2/Vs at room temperature. © 2011 IEEE.

200-V lateral superjunction LIGBT on partial SOI

This letter presents a novel lateral superjunction lateral insulated-gate bipolar transistor (LIGBT) in partial silicon-on-insulator (SOI) technology in 0.18-μm partial-SOI (PSOI) high-voltage (HV) process. For an n-type superjunction LIGBT, the p-layer in the superjunction drift region not only helps in achieving uniform electric field distribution but also contributes to the on-state current. The superjunction LIGBT successfully achieves a breakdown voltage (BV) of 210 V with an R dson of 765 mΩ ̇ mm 2. It exhibits half the value of specific on-state resistance R dson and three times higher saturation current (I dsat) for the same BV, compared to a comparable lateral superjunction laterally diffused metal-oxide-semiconductor fabricated in the same technology. It also performs well in higher temperature dc operation with 38.8% increase in R dson at 175°C, compared to the room temperature without any degradation in latch-up performance. To realize this device, it only requires one additional mask layer into X-FAB 0.18-μm PSOI HV process. © 2012 IEEE.

Modelling and control of nonlinear systems using Gaussian processes with partial model information

Gaussian processes are gaining increasing popularity among the control community, in particular for the modelling of discrete time state space systems. However, it has not been clear how to incorporate model information, in the form of known state relationships, when using a Gaussian process as a predictive model. An obvious example of known prior information is position and velocity related states. Incorporation of such information would be beneficial both computationally and for faster dynamics learning. This paper introduces a method of achieving this, yielding faster dynamics learning and a reduction in computational effort from O(Dn2) to O((D - F)n2) in the prediction stage for a system with D states, F known state relationships and n observations. The effectiveness of the method is demonstrated through its inclusion in the PILCO learning algorithm with application to the swing-up and balance of a torque-limited pendulum and the balancing of a robotic unicycle in simulation. © 2012 IEEE.

Synchronization with partial state feedback on SO(n)

In this paper we consider the problem of constructing a distributed feedback law to achieve synchronization for a group of k agents whose states evolve on SO(n) and which exchange only partial state information along communication links. The partial state information is given by the action of the state on reference vectors in ℝn. We propose a gradient based control law which achieves exponential local convergence to a synchronization configuration under a rank condition on a generalized Laplacian matrix. Furthermore, we discuss the case of time-varying reference vectors and provide a convergence result for this case. The latter helps reach synchronization, requiring less communication links and weaker conditions on the instantaneous reference vectors. Our methods are illustrated on an attitude synchronization problem where agents exchange only their relative positions observed in the respective body frames. ©2009 IEEE.

Neutronic optimization in high conversion Th-233U fuel assembly with simulated annealing

This paper reports on fuel design optimization of a PWR operating in a self sustainable Th-233U fuel cycle. Monte Carlo simulated annealing method was used in order to identify the fuel assembly configuration with the most attractive breeding performance. In previous studies, it was shown that breeding may be achieved by employing heterogeneous Seed-Blanket fuel geometry. The arrangement of seed and blanket pins within the assemblies may be determined by varying the designed parameters based on basic reactor physics phenomena which affect breeding. However, the amount of free parameters may still prove to be prohibitively large in order to systematically explore the design space for optimal solution. Therefore, the Monte Carlo annealing algorithm for neutronic optimization is applied in order to identify the most favorable design. The objective of simulated annealing optimization is to find a set of design parameters, which maximizes some given performance function (such as relative period of net breeding) under specified constraints (such as fuel cycle length). The first objective of the study was to demonstrate that the simulated annealing optimization algorithm will lead to the same fuel pins arrangement as was obtained in the previous studies which used only basic physics phenomena as guidance for optimization. In the second part of this work, the simulated annealing method was used to optimize fuel pins arrangement in much larger fuel assembly, where the basic physics intuition does not yield clearly optimal configuration. The simulated annealing method was found to be very efficient in selecting the optimal design in both cases. In the future, this method will be used for optimization of fuel assembly design with larger number of free parameters in order to determine the most favorable trade-off between the breeding performance and core average power density.

Changes in the Mg profile and in dislocations induced by high temperature annealing of blue LEDs

The efficiency of the injection and recombination processes in InGaN/GaN LEDs is governed by the properties of the active region of the devices, which strongly depend on the conditions used for the growth of the epitaxial material. To improve device quality, it is very important to understand how the high temperatures used during the growth process can modify the quality of the epitaxial material. With this paper we present a study of the modifications in the properties of InGaN/GaN LED structures induced by high temperature annealing: thermal stress tests were carried out at 900 °C, in nitrogen atmosphere, on selected samples. The efficiency and the recombination dynamics were evaluated by photoluminescence measurements (both integrated and time-resolved), while the properties of the epitaxial material were studied by Secondary Ion Mass Spectroscopy (SIMS) and Rutherford Backscattering (RBS) channeling measurements. Results indicate that exposure to high temperatures may lead to: (i) a significant increase in the photoluminescence efficiency of the devices; (ii) a decrease in the parasitic emission bands located between 380 nm and 400 nm; (iii) an increase in carrier lifetime, as detected by time-resolved photoluminescence measurements. The increase in device efficiency is tentatively ascribed to an improvement in the crystallographic quality of the samples. © 2013 SPIE.

Effect of high temperature post-annealing on sidewalls of GaAs NWs grown by MOCVD

The sidewall facets of GaAs nanowires (NWs) were studied. It has been found that the sidewalls of GaAs NWs grown at 450 °C are {112} facets. However, the sidewalls of GaAs NWs start to become {110} during the postannealing at 650 °C for 30 min. © 2010 IEEE.

Dry oxidation and vacuum annealing treatments for tuning the wetting properties of carbon nanotube arrays.

In this article, we describe a simple method to reversibly tune the wetting properties of vertically aligned carbon nanotube (CNT) arrays. Here, CNT arrays are defined as densely packed multi-walled carbon nanotubes oriented perpendicular to the growth substrate as a result of a growth process by the standard thermal chemical vapor deposition (CVD) technique.(1,2) These CNT arrays are then exposed to vacuum annealing treatment to make them more hydrophobic or to dry oxidation treatment to render them more hydrophilic. The hydrophobic CNT arrays can be turned hydrophilic by exposing them to dry oxidation treatment, while the hydrophilic CNT arrays can be turned hydrophobic by exposing them to vacuum annealing treatment. Using a combination of both treatments, CNT arrays can be repeatedly switched between hydrophilic and hydrophobic.(2) Therefore, such combination show a very high potential in many industrial and consumer applications, including drug delivery system and high power density supercapacitors.(3-5) The key to vary the wettability of CNT arrays is to control the surface concentration of oxygen adsorbates. Basically oxygen adsorbates can be introduced by exposing the CNT arrays to any oxidation treatment. Here we use dry oxidation treatments, such as oxygen plasma and UV/ozone, to functionalize the surface of CNT with oxygenated functional groups. These oxygenated functional groups allow hydrogen bond between the surface of CNT and water molecules to form, rendering the CNT hydrophilic. To turn them hydrophobic, adsorbed oxygen must be removed from the surface of CNT. Here we employ vacuum annealing treatment to induce oxygen desorption process. CNT arrays with extremely low surface concentration of oxygen adsorbates exhibit a superhydrophobic behavior.

200V superjunction lateral IGBT fabricated on partial SOI

A 200V lateral insulated gate bipolar transistor (LIGBT) was successfully developed using lateral superjunction (SJ) in 0.18μm partial silicon on insulator (SOI) HV process. The results presented are based on extensive experimental measurements and numerical simulations. For an n-type lateral SJ LIGBT, the p layer in the SJ drift region helps in achieving uniform electric field distribution. Furthermore, the p-pillar contributes to the on-state current. Furthermore, the p-pillar contributes to sweep out holes during the turn-off process, thus leading to faster removal of plasma. To realize this device, one additional mask layer is required in the X-FAB 0.18μm partial SOI HV process. © 2013 IEEE.

Optical investigations of the effect of solvent and thermal annealing on the optoelectronic properties of Poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) films

Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) is one of the most promising conducting polymers that can be used as transparent electrode or as buffer layer for organic electronic devices. However, when used as an electrode, its conductivity has to be optimized either by the addition of solvents or by post-deposition processing. In this work, we investigate the effect of the addition of the polar solvent dimethylsulfoxide (DMSO) to an aqueous PEDOT:PSS solution on its optical and electrical properties by the implementation of the Drude model for the analysis of the measured pseudo-dielectric function by Spectroscopic Ellipsometry from the near infrared to the visible-far ultraviolet spectral range. The results show that the addition of DMSO increases significantly the film conductivity, which reaches a maximum value at an optimum DMSO concentration as it has confirmed by experimentally measured conductivity values. The post-deposition thermal annealing has been found to have a smaller effect on the film conductivity. © 2013 Elsevier B.V.