150 resultados para Negative dimension integration


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This paper explores supply network integration in complex product service systems involving close collaboration between primes. Four case study networks are studied (aerospace, naval, power and telecoms), each involving equipment manufacture and service provision. Factors that support network integration, identified from the literature and refined in the in-depth pilot case, were used to explore which processes support integration of the extended enterprise. Results suggests that a select set of processes support integration of the extended enterprise and that the absence of a shared view on these critical enabling processes results from contextual complexity of the network rather than from competing commercial interests. Copyright © 2011 Inderscience Enterprises Ltd.

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Innovation policies play an important role throughout the development process of emerging industries. However, existing policy studies view the process as a black-box, and fail to understand the policy-industry interactions through the process. This paper aims to develop an integrated technology roadmapping tool, in order to facilitate the better understanding of policy heterogeneity at the different stages of new energy industries in China. Through the case study of Chinese wind energy equipment manufacturing industry, this paper elaborates the dynamics between policy and the growth process of the industry. Further, this paper generalizes some Chinese specifics for the policy-industry interactions. As a practical output, this study proposes a policy-technology roadmapping framework that maps policy-market-product- technology interactions in response to the requirement for analyzing and planning the development of new industries in emerging economies (e.g. China). This paper will be of interest to policy makers, strategists, investors, and industrial experts. © 2011 IEEE.

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As a novel implementation of the static random access memory (SRAM), the tunneling SRAM (TSRAM) uses the negative differential resistance of tunnel diodes (TD’s) and potentially offers considerable improvements in both standby power dissipation and integration density compared to the conventional CMOS SRAM. TSRAM has not yet been realized with a useful bit capacity mainly because the level of uniformity required of the nanoscale TD’s has been demanding and difficult to achieve. In this letter, we propose a Monte Carlo approach for estimating the yield of TSRAM cells and show that by optimizing the cell’s external circuit parameters, we can relax the allowable tolerance of a key device parameter of a resonant-TD-(RTD) based cell by three times.