200V superjunction lateral IGBT fabricated on partial SOI

A 200V lateral insulated gate bipolar transistor (LIGBT) was successfully developed using lateral superjunction (SJ) in 0.18μm partial silicon on insulator (SOI) HV process. The results presented are based on extensive experimental measurements and numerical simulations. For an n-type lateral SJ LIGBT, the p layer in the SJ drift region helps in achieving uniform electric field distribution. Furthermore, the p-pillar contributes to the on-state current. Furthermore, the p-pillar contributes to sweep out holes during the turn-off process, thus leading to faster removal of plasma. To realize this device, one additional mask layer is required in the X-FAB 0.18μm partial SOI HV process. © 2013 IEEE.

A thermopile based SOI CMOS MEMS wall shear stress sensor

In this paper we present for the first time, a novel silicon on insulator (SOI) complementary metal oxide semiconductor (CMOS) MEMS thermal wall shear stress sensor based on a tungsten hot-film and three thermopiles. These devices have been fabricated using a commercial 1 μm SOI-CMOS process followed by a deep reactive ion etch (DRIE) back-etch step to create silicon oxide membranes under the hot-film for effective thermal isolation. The sensors show an excellent repeatability of electro-thermal characteristics and can be used to measure wall shear stress in both constant current anemometric as well as calorimetric modes. The sensors have been calibrated for wall shear stress measurement of air in the range of 0-0.48 Pa using a suction type, 2-D flow wind tunnel. The calibration results show that the sensors have a higher sensitivity (up to four times) in calorimetric mode compared to anemometric mode for wall shear stress lower than 0.3 Pa. © 2013 IEEE.

Calculation of metallic and insulating phases of V2O3 by hybrid density functionals.

The electronic structure of vanadium sesquioxide V2O3 in its different phases has been calculated using the screened exchange hybrid density functional. The hybrid functional accurately reproduces the experimental electronic properties of all three phases, the paramagnetic metal (PM) phase, the anti-ferromagnetic insulating phase, and the Cr-doped paramagnetic insulating (PI) phase. We find that a fully relaxed supercell model of the Cr-doped PI phase based on the corundum structure has a monoclinic-like local strain around the substitutional Cr atoms. This is found to drive the PI-PM transition, consistent with a Peierls-Mott transition. The PI phase has a calculated band gap of 0.15 eV, in good agreement with experiment.

In-Situ grown carbon nanotubes for enhanced CO2 detection in non-dispersive-infra-red system

Non-dispersive-infra-red (NDIR) sensors are believed to be one of the most selective and robust solutions for CO2 detection, though cost prohibits their broader integration. In this paper we propose a commercially viable silicon-on-insulator (SOI) complementary metal-oxide (CMOS) micro-electro-mechanical (MEMS) technology for an IR thermal emitter. For the first time, vertically aligned multi walled carbon nanotubes (VA-MWCNTs) are suggested as a possible coating for the enhancement of the emission intensity of the optical source of a NDIR system. VA-MWCNTs have been grown in situ by chemical vapour deposition (CVD) exclusively on the heater area. Optical microscopy, scanning electron microscopy and Raman spectroscopy have been used to verify the quality of the VA-MWCNTs growth. The CNT-coated emitter demonstrated an increased response to CO2 of approx. 60%. Furthermore, we show that the VA-MWCNTs are stable up to temperatures of 500°C for up to 100 hours. © 2013 IEEE.

Picosecond laser patterning of PEDOT:PSS thin films

Picosecond pulsed laser (10.4 ps, 1064 nm, 5 and 50 kHz) patterning studies were performed, of PEDOT:PSS thin films of varying thickness deposited by spin coating on glass substrates, by ablating the films or by changing locally by laser irradiation the optical and electrical properties of the polymer. From a detailed observation of the morphology of single pulse ablated holes on the surfaces of the films, in combination with simple calculations, it is concluded that photomechanical ablation is the likely ablation mechanism of the films. The single pulse ablation thresholds were measured equal to 0.13-0.18 J/cm 2 for films with thicknesses in the region of ∼100-600 nm. The implications on ablation line patterning of the films using different fluences, scanning speeds and pulse repetition rates, were investigated systematically. Laser irradiation of the films before ablation induces a metal-insulator transition of the polymer because of the formation of charge localization due to a possible creation of molecular disorder in the polymer and shortening of its conjugation length. © 2010 Elsevier B.V. All rights reserved.