Monolithic electro-optically modulated VCSEL suitable for radio over fibre applications to 20 GHz

An integrated EOM VCSELs is shown to offer high linearity (92dB/Hz 2/3 at 6GHz) and by extrapolation ∼90dB/Hz2/3 up to 20GHz. Successful modulation with IEEE 802.11g signals is demonstrated at 6GHz with a 12dB dynamic range. © 2011 Optical Society of America.

Discovering transcriptional modules by Bayesian data integration.

MOTIVATION: We present a method for directly inferring transcriptional modules (TMs) by integrating gene expression and transcription factor binding (ChIP-chip) data. Our model extends a hierarchical Dirichlet process mixture model to allow data fusion on a gene-by-gene basis. This encodes the intuition that co-expression and co-regulation are not necessarily equivalent and hence we do not expect all genes to group similarly in both datasets. In particular, it allows us to identify the subset of genes that share the same structure of transcriptional modules in both datasets. RESULTS: We find that by working on a gene-by-gene basis, our model is able to extract clusters with greater functional coherence than existing methods. By combining gene expression and transcription factor binding (ChIP-chip) data in this way, we are better able to determine the groups of genes that are most likely to represent underlying TMs. AVAILABILITY: If interested in the code for the work presented in this article, please contact the authors. SUPPLEMENTARY INFORMATION: Supplementary data are available at Bioinformatics online.

Materials and devices toward three-dimensional integration

It has been shown that the apparent benefits of a two-layer stacked SOI system, i.e. packing density and speed improvements, are less than could be expected in the context of a VLSI requirement [1]. In this project the stacked SOI system has been identified as having major application in the realization of integrated, mixed technology systems. Zone-melting-recrystallization (ZMR) with lasers and electron beams have been used to produce device quality SOI material and a small test-bed circuit has been designed as a demonstration of the feasibility of this approach. © 1988.

Numerical modelling of dynamic response of loss modulated monolithic multisection mode-locked semiconductor lasers

Monolithic multisection mode-locked semiconductor lasers with an integrated distributed Bragg reflector (DBR) have recently been demonstrated to generate stable picosecond pulses at high repetition rates suitable for optical communication systems. However, there has been very little theoretical work on understanding the physical mechanisms of the device and on optimisation of the absorber modulator design. This article presents numerical modeling of the loss modulated mode-locking process in these lasers. The model predicts most aspects experimentally observed within this type of device, and the results show the output waveform, optical spectrum, instantaneous frequency chirp, and stable operating range.

Low short term timing jitter in an integrated monolithic extended cavity semiconductor mode-locked laser

Jitter measurements were performed on a monolithically integrated active/passive cavity multiple quantum well laser, actively mode-locked at 10 GHz via modulation of an absorber section. Sub-10 ps pulses were produced upon optimization of the drive conditions to the gain, distributed Bragg reflector, and absorber sections. A model was also developed using travelling wave rate equations. Simulation results suggest that spontaneous emission is the dominant cause of jitter, with carrier dynamics having a time constant of the order of 1 ns.

Process development on the monolithic fabrication of an ultra-compact 4×4 optical switch matrix on InP/InGaAsP material

We have fabricated an ultra-compact 4×4 optical matrix on InP/InGaAsP material. 1×4 MMI couplers and TIR mirrors are employed to produce a compact 1×2 mm2 device. A CH4/H2/O2 RIE dry etch process has been used to realize two-level dry etching: deep-etch for both the MMI couplers and the mirrors and shallow-etch for the rest of the routing waveguides. It was found that a metal/dielectric bilayer mask is essential for multi-dry-etch processes and high profile verticality. We have found a Ti intermediate mask for the deep-etch process which is removable by SF6 dry-etch before the following shallow process. Dry-etch removal of the intermediate mask is necessary to protect the deep-etched mirror sidewall.

Supply network integration in multi-organisational network systems

This paper explores supply network integration in complex product service systems involving close collaboration between primes. Four case study networks are studied (aerospace, naval, power and telecoms), each involving equipment manufacture and service provision. Factors that support network integration, identified from the literature and refined in the in-depth pilot case, were used to explore which processes support integration of the extended enterprise. Results suggests that a select set of processes support integration of the extended enterprise and that the absence of a shared view on these critical enabling processes results from contextual complexity of the network rather than from competing commercial interests. Copyright © 2011 Inderscience Enterprises Ltd.