500 fs wideband tunable fiber laser mode-locked by nanotubes

Sub-picosecond tunable ultrafast lasers are important tools for many applications. Here we present an ultrafast tunable fiber laser mode-locked by a nanotube based saturable absorber. The laser outputs ∼500fs pulses over a 33 nm range at 1.5μm. This outperforms the current achievable pulse duration from tunable nanotube mode-locked lasers. © 2012 Elsevier B.V. All rights reserved.

Tm-doped fiber laser mode-locked by graphene-polymer composite

We demonstrate mode-locking of a thulium-doped fiber laser operating at 1.94 μm, using a graphene-polymer based saturable absorber. The laser outputs 3.6 ps pulses, with ∼0.4 nJ energy and an amplitude fluctuation ∼0.5%, at 6.46 MHz. This is a simple, low-cost, stable and convenient laser oscillator for applications where eye-safe and low-photon-energy light sources are required, such as sensing and biomedical diagnostics. © 2012 Optical Society of America.

Pulsewidth switchable, wavelength tuneable ultrafast fiber laser mode-locked by carbon nanotubes

Employing a nanotube-based saturable absorber, we demonstrate a continuously tunable (1533-1563nm) ultrafast fiber laser, with output pulsewidth switchable between picosecond (1.2 ps) and femtosecond (610 fs) regimes. © 2012 IEEE.

Dual-wavelength, carbon nanotube mode-locked fiber laser

We demonstrate a dual-wavelength, carbon nanotube mode-locked Er fiber laser. The laser outputs two wavelengths at 1549nm and 1562nm, and each wavelength corresponds to pulse duration of ∼1.3ps and repetition rate of ∼11.27MHz. © 2012 IEEE.

Dead-time minimisation using active voltage control gate drive for high-power IGBT converters

High-power converters usually need longer dead-times than their lower-power counterparts and a lower switching frequency. Also due to the complicated assembly layout and severe variations in parasitics, in practice the conventional dead-time specific adjustment or compensation for high-power converters is less effective, and usually this process is time-consuming and bespoke. For general applications, minimising or eliminating dead-time in the gate drive technology is a desirable solution. With the growing acceptance of power electronics building blocks (PEBB) and intelligent power modules (IPM), gate drives with intelligent functions are in demand. Smart functions including dead time elimination/minimisation can improve modularity, flexibility and reliability. In this paper, a dead-time minimisation using Active Voltage Control (AVC) gate drive is presented. © 2012 IEEE.

Holographic beam steering a directly modulated twoelectrode high brightness tapered laser diode for optical wireless communications

An error-free free space communication link with 3 angular coverage and 1.25GHz modulation bandwidth is demonstrated by beam steering an ultra high modulation efficiency bright tapered laser diode using a Liquid Crystal Spatial Light Modulator. © OSA 2012.

Comparative analysis of static and switching performance of 1.2 kV commercial SiC transistors for high power density applications

This paper presents a critical comparison of static and switching performance of commercially available 1.2 kV SiC BJTs, MOSFETs and JFETs with 1.2 kV Si IGBTs. The experiments conducted are mainly focussed on investigating the temperature dependence of device performance. As an emerging commercial device, special emphasis is placed on SiC BJTs. The experimental data indicate that the SiC BJTs have relatively smaller conduction, off-state and turn-off switching losses, in comparison to the other devices. Furthermore, SiC BJTs have demonstrated much higher static current gain values in comparison to their silicon counterparts, thereby minimising driver losses. Based on the results, the suitability of SiC devices for high power density applications has been discussed. © 2013 IEEE.

Predictive optimisation of high-power IGBT switching under Active Voltage Control

Active Voltage Control (AVC) is an implementation of classic Proportional-Derivative (PD) control and multi-loop feedback control to force IGBT to follow a pre-set switching trajectory. The initial objective of AVC was mainly to synchronise the switching of IGBTs connected in series so as to realise voltage balancing between devices. For a single IGBT switching, the AVC reference needs further optimisation. Thus, a predictive manner of AVC reference generation is required to cope with the nonlinear IGBT switching parameters while performing low loss switching. In this paper, an improved AVC structure is adopted along with a revised reference which accommodates the IGBT nonlinearity during switching and is predictive based on current being switched. Experimental and simulation results show that close control of a single IGBT switching is realised. It is concluded that good performance can be obtained, but the proposed method needs careful stability analysis for parameter choice. © 2013 IEEE.

Gigabit/s modulation of twin-electrode high-brightness tapered laser with high modulation efficiency

Simultaneous high modulation speed and high modulation efficiency operation of a two-electrode tapered laser is reported. 1Gb/s direct data modulation is achieved with 68mA applied current swing for a 0.95W output optical modulation amplitude. © 2009 Optical Society of America.