High-power and picosecond pulse generation from a passively Q-switched tapered InGaAs/GaAs laser

Tapered waveguides have been used for enhancing pulse powers in Q-switched AlGaAs and InGaAsP lasers. This paper reports on passively Q-switched pulses with 1.53 W peak power and 41-ps FWHM from an InGaAs/GasAs (970 nm) double-contact tapered semiconductor laser in a well defined single-lobed far-field.

Grain boundaries in multi-seeded melt-grown superconductors

Future applications of high temperature superconductors require bulk materials of a complex shape. The multi-seeded-melt-growth process (MSMG) represents a promising technique for obtaining qualitatively well oriented bulk materials with different kinds of shape. In the MSMG process, several seeds are placed on a precursor pellet, from which the growth of the bulk starts. A certain problem of the MSMG process is that grain boundaries become inevitable when the growth fronts of two neighboring seeds collide. These grain boundaries are responsible for a reduction of the critical currents and pose a problem for high current applications. By polishing the sample step by step, the influence of the grain boundaries was investigated by scanning Hall probe measurements and by the magnetoscan technique. Additionally, optical microscopy and electron microscopy were employed to investigate the details of the microstructure. © 2005 IEEE.

Functionalisation of microfluidic channels with in situ grown carbon nanotubes

We present a new route towards customizing the surface properties of microfluidic channels, by a forest of in situ grown multiwalled carbon nanotubes (CNT). Local distortions of the electrical field direction are used to control the direction of the carbon nanotube growth. © 2005 Materials Research Society.

Smart chemical sensor application of ZnO nanowires grown on CMOS compatible SOI microheater platform

Smart chemical sensor based on CMOS(complementary metal-oxide- semiconductor) compatible SOI(silicon on insulator) microheater platform was realized by facilitating ZnO nanowires growth on the small membrane at the relatively low temperature. Our SOI microheater platform can be operated at the very low power consumption with novel metal oxide sensing materials, like ZnO or SnO2 nanostructured materials which demand relatively high sensing temperature. In addition, our sol-gel growth method of ZnO nanowires on the SOI membrane was found to be very effective compared with ink-jetting or CVD growth techniques. These combined techniques give us the possibility of smart chemical sensor technology easily merged into the conventional semiconductor IC application. The physical properties of ZnO nanowire network grown by the solution-based method and its chemical sensing property also were reported in this paper.

Guided propagation of surface acoustic waves and piezoelectric field enhancement in ZnO/GaAs systems

The characteristics and dispersion of the distinct surface acoustic waves (SAWs) propagating in ZnO/GaAs heterostructures have been studied experimentally and theoretically. Besides the Rayleigh mode, strong Sezawa modes, which propagate confined in the overlayer, arise due to the smaller sound velocity in ZnO than in the substrate. The design parameters of the structure providing the strongest piezoelectric field at a given depth within the layered system for the different modes have been determined. The piezoelectric field of the Rayleigh mode is shown to be more than 10 times stronger at the interface region of the tailored ZnO/GaAs structure than at the surface region of the bulk GaAs, whereas the same comparison for the first Sezawa mode yields a factor of 2. This enhancement, together with the capacity of selecting waves with different piezoelectric and strain field depth profiles, will facilitate the development of SAW-modulated optoelectronic applications in GaAs-based systems. © 2011 American Institute of Physics.

Stress-induced domain dynamics and phase transitions in epitaxially grown VO₂ nanowires.

We demonstrate that surface stresses in epitaxially grown VO₂ nanowires (NWs) have a strong effect on the appearance and stability of intermediate insulating M₂ phases, as well as the spatial distribution of insulating and metallic domains during structural phase transitions. During the transition from an insulating M1 phase to a metallic R phase, the coexistence of insulating M₁ and M₂ phases with the absence of a metallic R phase was observed at atmospheric pressure. In addition, we show that, for a VO₂ NW without the presence of an epitaxial interface, surface stresses dominantly lead to spatially inhomogeneous phase transitions between insulating and metallic phases. In contrast, for a VO₂ NW with the presence of an epitaxial interface, the strong epitaxial interface interaction leads to additional stresses resulting in uniformly alternating insulating and metallic domains along the NW length.

Hydrothermally-grown ZnO nanowire tips for scanning tunnelling microscopy.

The probe tip is pivotal in determining the resolution and nature of features observed in the Scanning Tunnelling Microscope (STM). We have augmented a conventional Pt/Ir metallic tip with a hydrothermally grown ZnO nanowire (NW). Atomic resolution imaging of graphite is attained. Current-voltage (IV) characteristics demonstrate an asymmetry stemming from the unintentional n-type doping of the ZnO NW, whereas the expected Schottky barrier at the ZnO-Pt/Ir interface is shown to have negligible effect. Moreover the photoconductivity of the system is investigated, paving the way towards a photodetector capable of atomic resolution.