Performance of CMOS Devices in Silicon-on-Sapphire Films After Solid-Phase Epitaxial Growth With Rapid Electron-Beam Heating

The crystal quality of 0.3-μm-thick as-grown epitaxial silicon-on-sapphire (SOS) was improved using solid-phase epitaxy (SPE) by implantation with silicon to 1015 ions/cm2 at 175 keV and rapid annealing using electron-beam heating, n-channel and p-channel transistormobilities increased by 31 and 19 percent, respectively, and a reduction in ring-oscillator stage delay confirmed that crystal defects near the upper silicon surface had been removed. Leakage in n-channel transistors was not significantly affected by the regrowth process but for p-channel transistors back-channel leakage was considerably greater than for the control devices. This is attributed to aluminum released by damage to the sapphire during silicon implantation. © 1985 IEEE

REGROWTH RATES OF AMORPHOUS LAYERS IN SILICON-ON-SAPPHIRE FILMS.

The rate and direction of regrowth of amorphous layers, created by self-implantation, in silicon-on-sapphire (SOS) have been studied using time resolved reflectivity (TRR) experiments performed simultaneously at two wavelengths. Regrowth of an amorphous layer towards the surface was observed in specimens implanted with 3 multiplied by (times) 10**1**5Si** plus /cm**2 at 50keV and regrowth of a buried amorphous layer, from a surface seed towards the sapphire, was observed in specimens implanted with 1 multiplied by (times) 10**1**5Si** plus /cm**2 at 175keV. Rapid isothermal heating to regrow the layers was performed in an electron beam annealing system. The combination of 514. 5nm and 632. 8nm wavelengths was found to be particularly useful for TRR studies since the high absorption in amorphous silicon, at the shorter wavelength, means that the TRR trace is not complicated by reflection from the silicon-sapphire interface until regrowth is nearly complete.

Formation of silicon-on-insulator layers by electron beam recrystallization

This paper outlines the development of the electron beam recrystallization approach to the formation of silicon-on-insulator layers. The technique of recrystallizing seeded layers by a line electron beam has been widely adopted. Present practice in electron beam recrystallization is reviewed, both from materials and process points of view. Applications of silicon-on-insulator substrates formed in this way are described, particularly in three-dimensional integration. © 1988.

Modeling of unsteady transitional boundary layers

In turbomachinery, a considerable proportion of the blade surface area can be covered by transitional boundary layers. This means that accurate prediction of the profile loss and boundary layer behavior in general depends on the accurate modeling of the transitional boundary layers, especially at low Reynolds numbers. This paper presents a model for determining the intermittency resulting from the unsteady transition caused by the passage of wakes over a blade surface. The model is founded on work by Emmons (1951) who showed that the intermittency could be calculated from a knowledge of the behavior of randomly formed turbulent spots. The model is used to calculate the development of the boundary layer on the rotor of a low Reynolds number single-stage turbine. The predictions are compared with experimental results obtained using surface-mounted hot-film anemometers and hot-wire traverses of the rotor midspan boundary layer at two different rotor-stator gaps. The validity and limitations of the model are discussed.

The contact of rough surfaces carrying pressure sensitive boundary layers

When two rough surfaces are loaded together it is well known that the area of true contact is very much smaller then the geometric area and that, consequently, local contact pressures are very much greater than the nominal value. If the asperities on each surface can be thought of as possessing smooth summits and each of the solids is elastically isotropic then the pressure distribution will consist of a series of small, but severe, Hertzian patches. However, if one of both of the surfaces in question is protected by a boundary layer then both the number and dimensions of these patches, and the form of the pressure distribution within them, will be modified. Recent experimental evidence from studies using both Atomic Force Microscopy and micro-tribometry suggests that boundary films produced by the action of commercial anti-wear additives, such as ZDTP, exhibit mechanical properties, which are affected by local values of pressure. These changes bring about further modifications to local conditions. These effects have been explored in a numerical model of rough surface contact and the implications for the mechanisms of surface distress and wear are discussed. © 2000 Elsevier Science B.V. All rights reserved.

Friction of sliding surfaces carrying adsorbed lubricant layers

In concentrated contacts the behaviour of lubricants is much modified by the high local pressures: changes can arise both from molecular ordering within the very thin film lubricant layers present at the interface as well as from the deposition on the component surfaces of more solid-like polymeric boundary layers. These 'third bodies' separating the solid surfaces may have rheological or mechanical properties very different from those observed in the bulk. Classical elasto-hydrodynamic theory considers the entrapped lubricant to exhibit a piezo-viscous behaviour while the conventional picture of more solid boundary lubricant layers views their shear strength r as being linearly dependent on local pressure p, so that T = TO + ap where TO and a are constants. If TO is relatively small, then the coefficient of friction \i = T Ip ~ a and so Amonton's laws are recovered. However, the properties of adsorbed or deposited surface films, or indeed other third bodies such as debris layers, may be more complex than this. A preliminary study has looked quantitatively at the influence of the pressure dependence of the shear strength of any surface layer on the overall friction coefficient of a contact which is made up of an array of asperities whose height varies in a Gaussian manner. Individual contact points may be elastic or plastic. The analysis results in plots of coefficient of friction versus the service or load parameter PIH&NRa where P is the nominal pressure on the contact, HS the hardness of the deforming surface, N the asperity density, R the mean radius of curvature of the asperities, and a is the standard deviation of their height distribution. In principle, any variation oft withp can be incorporated into the model; however, in this initial study we have used data on colloidal suspensions from the group at the Ecole Centrale de Lyon as well as examining the effect of functional relationships of somewhat greater complexity than a simple linear form. Results of the analysis indicate that variations in fj. are possible as the load is varied which depend on the statistical spread of behaviour at individual asperity contacts. The value of this analysis is that it attempts to combine the behaviour of films on the molecular scale with the topography of real engineering surfaces and so give an indication of the effects at the full-size or macro-scale that can be achieved by chemical or molecular surface engineering.

Thickness control of Molecular Beam Epitaxy grown layers at the 0.01-0.1 monolayer level

Electron tunnelling through semiconductor tunnel barriers is exponentially sensitive to the thickness of the barrier layer, and in the most common system, the AlAs tunnel barrier in GaAs, a one monolayer variation in thickness results in a 300% variation in the tunnelling current for a fixed bias voltage. We use this degree of sensitivity to demonstrate that the level of control at 0.06 monolayer can be achieved in the growth by molecular beam epitaxy, and the geometrical variation of layer thickness across a wafer at the 0.01 monolayer level can be detected.