Time-resolved volumetric measurement of fine-scale coherent structures in turbulence.

We present full volumetric (three-dimensional) time-resolved (+one-dimensional) measurements of the velocity field in a large water mixing tank, allowing us to assess spatial and temporal rotational energy (enstrophy) and turbulent energy dissipation intermittency. In agreement with previous studies, highly intermittent behavior is observed, with intense coherent flow structures clustering in the periphery of larger vortices. However, further to previous work the full volumetric measurements allow us to separate out the effects of advection from other effects, elucidating not only their topology but also the evolution of these intense events, through the local balance of stretching and diffusion. These findings contribute toward a better understanding of the intermittency phenomenon, which should pave the way for more accurate models of the small-scale motions based on an understanding of the underlying flow physics.

Tunable electronic transport characteristics of surface-architecture-controlled ZnO nanowire field effect transistors.

Surface-architecture-controlled ZnO nanowires were grown using a vapor transport method on various ZnO buffer film coated c-plane sapphire substrates with or without Au catalysts. The ZnO nanowires that were grown showed two different types of geometric properties: corrugated ZnO nanowires having a relatively smaller diameter and a strong deep-level emission photoluminescence (PL) peak and smooth ZnO nanowires having a relatively larger diameter and a weak deep-level emission PL peak. The surface morphology and size-dependent tunable electronic transport properties of the ZnO nanowires were characterized using a nanowire field effect transistor (FET) device structure. The FETs made from smooth ZnO nanowires with a larger diameter exhibited negative threshold voltages, indicating n-channel depletion-mode behavior, whereas those made from corrugated ZnO nanowires with a smaller diameter had positive threshold voltages, indicating n-channel enhancement-mode behavior.