Defect and disorder reduction by annealing in hydrogenated tetrahedral amorphous carbon

Hydrogenated tetrahedral amorphous carbon (ta-C:H) is a form of diamond-like carbon with a high sp3 content (>60%), grown here using a plasma beam source. Information on the behaviour of hydrogen upon annealing is obtained from effusion measurements, which show that hydrogen does not effuse significantly at temperatures less than 500 °C in films grown using methane and 700 °C in films grown using acetylene. Raman measurements show no significant structural changes at temperatures up to 300 °C. At higher temperatures, corresponding to the onset of effusion, the Raman spectra show a clustering of the sp2 phase. The density of states of ta-C:H is directly measured using scanning tunnelling spectroscopy. The measured gradients of the conduction and valence band tails increase up to 300 °C, confirming the occurrence of band tail sharpening. Examination of the photoluminescence background in the Raman spectra shows an increase in photoluminescence intensity with decreasing defect density, providing evidence that paramagnetic defects are the dominant non-radiative recombination centres in ta-C:H.

Bonding regimes of nitrogen in amorphous carbon

Nitrogen can have numerous effects on diamond-like carbon: it can dope, it can form the hypothetical superhard compound C3N4, or it can create fullerene-like bonding structures. We studied amorphous carbon nitrogen films deposited by a filtered cathodic vacuum arc as a function of nitrogen content, ion energy and deposition temperature. The incorporation of nitrogen from 10-2 to 10 at% was measured by secondary ion mass spectrometry and elastic recoil detection analysis and was found to vary slightly sublinearly with N2 partial pressure during deposition. In the doping regime from 0 to about 0.4% N, the conductivity changes while the sp3 content and optical gap remain constant. From 0.4 to approximately 10% N, existing sp2 sites condense into clusters and reduce the band gap. Nitrogen contents over 10% change the bonding from mainly sp3 to mainly sp2. Ion energies between 20 and 250 eV do not greatly modify this behaviour. Deposition at higher temperatures causes a sudden loss of sp3 bonding above about 150 °C. Raman spectroscopy and optical gap data show that existing sp2 sites begin to cluster below this temperature, and the clustering continues above this temperature. This transition is found to vary only weakly with nitrogen addition, for N contents below 10%.

Preparation of tetrahedral amorphous carbon films by filtered cathodic vacuum arc deposition

Tetrahedrally bonded amorphous carbon (ta-C) and nitrogen doped (ta-C:N) films were obtained at room temperature in a filtered cathodic vacuum arc (FCVA) system incorporating an off-plane double bend (S-bend) magnetic filter. The influence of the negative bias voltage applied to substrates (from -20 to -350 V) and the nitrogen background pressure (up to 10-3 Torr) on film properties was studied by scanning electron microscopy (SEM), electron energy loss spectroscopy (EELS), Raman spectroscopy, X-ray photoemission spectroscopy (XPS), secondary ion mass spectroscopy (SIMS) and X-ray reflectivity (XRR). The ta-C films showed sp3 fractions between 84% and 88%, and mass densities around 3.2 g/cm3 in the wide range of bias voltage studied. In contrast, the compressive stress showed a maximum value of 11 GPa for bias voltages around -90 V, whereas for lower and higher bias voltages the stress decreased to 6 GPa. As for the ta-C:N films grown at bias voltages below -200 V and with N contents up to 7%, it has been found that the N atoms were preferentially sp3 bonded to the carbon network with a reduction in stress below 8 GPa. Further increase in bias voltage or N content increased the sp2 fraction, leading to a reduction in film density to 2.7 g/cm3.

Hydrogenated amorphous silicon and silicon nitride deposited at less than 100° C by ECR-PECVD for thin film transistors

A systematic study has been made of the growth of both hydrogenated amorphous silicon (a-Si:H) and silicon nitride (a-SiN) by electron cyclotron resonance plasma enhanced chemical vapour deposition (ECR-PECVD). In the case of a-SiN, helium and nitrogen gas is injected into the system such that it passes through the resonance zone. These highly ionised gases provide sufficient energy to ionise the silane gas, which is injected further downstream. It is demonstrated that a gas phase reaction occurs between the silane and nitrogen species. It is control of the ratio of silane to nitrogen in the plasma which is critical for the production of stoichiometric a-SiN. Material has been produced at 80°C with a Si:N ratio of 1:1.3 a breakdown strength of ∼6 MV cm-1 and resistivity of > 1014 Ω cm. In the case of a-Si:H, helium and hydrogen gas is injected into the ECR zone and silane is injected downstream. It is shown that control of the gas phase reactions is critical in this process also. a-Si:H has been deposited at 80 °C with a dark conductivity of 10-11 Ω-1 cm-1 and a photosensitivity of justbelowl 4×104. Such materials are suitable for use in thin film transistors on plastic substrates.

Compositional analysis of thin film amorphous semiconductors and insulators using LIMA

LIMA (Laser-induced Ion Mass Analysis) is a new technique capable of compositional analysis of thin films and surface regions. Under UHV conditions a focused laser beam evaporates and ionizes a microvolume of specimen material from which a mass spectrum is obtained. LIMA has been used to examine a range of thin film materials with applications in electronic devices. The neutral photon probe avoids charging problems, and low conductivity materials are examined without prior metallization. Analyses of insulating silicon oxides, nitrides, and oxynitrides confirm estimates of composition from infrared measurements. However, the hydrogen content of hydrogenated amorphous silicon (a-Si : H) found by LIMA shows no correlation with values given by infrared absorption analysis. Explanations are proposed and discussed. © 1985.

Materials science: The ultrasmoothness of diamond-like carbon surfaces

The ultrasmoothness of diamond-like carbon coatings is explained by an atomistic/continuum multiscale model. At the atomic scale, carbon ion impacts induce downhill currents in the top layer of a growing film. At the continuum scale, these currents cause a rapid smoothing of initially rough substrates by erosion of hills into neighboring hollows. The predicted surface evolution is in excellent agreement with atomic force microscopy measurements. This mechanism is general, as shown by similar simulations for amorphous silicon. It explains the recently reported smoothing of multilayers and amorphous transition metal oxide films and underlines the general importance of impact-induced downhill currents for ion deposition, polishing, and nanopattering.

Advanced thermal processing of semiconductor materials in the msec-range

This paper reviews the advances that flash lamp annealing brings to the processing of the most frequently used semiconductor materials, namely silicon and silicon carbide, thus enabling the fabrication of novel microelectronic structures and materials. The paper describes how such developments can translate into important practical applications leading to a wide range of technological benefits. Opportunities in ultra-shallow junction formation, heteroepitaxial growth of thin films of cubic silicon carbide on silicon, and crystallization of amorphous silicon films, along with the technical reasons for using flash lamp annealing are discussed in the context of state-of-the-art materials processing. © 2005 IEEE.

Properties of tetrahedral amorphous carbon prepared by vacuum arc deposition

The structural, optical, electrical and physical properties of amorphous carbon deposited from the filtered plasma stream of a vacuum arc were investigated. The structure was determined by electron diffraction, neutron diffraction and energy loss spectroscopy and the tetrahedral coordination of the material was confirmed. The measurements gave a nearest neighbour distance of 1.53 Å, a bond angle of 110 and a coordination number of four. A model is proposed in which the compressive stress generated in the film by energetic ion impact produces pressure and temperature conditions lying well inside the region of the carbon phase diagram within which diamond is stable. The model is confirmed by measurements of stress and plasmon energy as a function of ion energy. The model also predicts the formation of sp2-rich materials on the surface owing to stress relaxation and this is confirmed by a study of the surface plasmon energy. Some nuclear magnetic resonance, infrared and optical properties are reported and the behaviour of diodes using tetrahedral amorphous carbon is discussed. © 1991.

Performance of thin film carbon materials and carbon nanotubes as cold cathodes

The field emissions from three different types of carbon films are studied using a Kiethly voltage-current source-measure unit under computer control. The three types of carbon films are : 1) a-C:H:N deposited using an inductively coupled rf PECVD process, where the N content in the films can be as high as 30 at %; 2) cathodic arc deposited tetrahedral amorphous carbon with embedded regions of carbon nanotube and anion structures and 3) unoriented carbon nanotube films on a porous substrate. The films are formed by filtering a solution of nanotubes dispersed in alcohol through the pores and drying.

Photovoltaic measurements in carbon nanotube - Amorphous silicon core/shell nanowire

Carbon nanotube is one of the promising materials for exploring new concepts in solar energy conversion and photon detection. Here, we report the first experimental realization of a single core/shell nanowire photovoltaic device (2-4μm) based on carbon nanotube and amorphous silicon. Specifically, a multi-walled carbon nanotube (MWNTs) was utilized as the metallic core, on which n-type and intrinsic amorphous silicon layers were coated. A Schottky junction was formed by sputtering a transparent conducting indium-tin-oxide layer to wrap the outer shell of the device. The single coaxial nanowire device showed typical diode ratifying properties with turn-on voltage around 1V and a rectification ratio of 104 when biased at ±2V. Under illumination, it gave an open circuit voltage of ∼0.26V. Our study has shown a simple and useful platform for gaining insight into nanowire charge transport and collection properties. Fundamental studies of such nanowire device are important for improving the efficiency of future nanowire solar cells or photo detectors. © 2012 IEEE.

Deposition of low stress amorphous zinc tin oxide at ambient temperature using a remote plasma sputtering process suitable for delicate substrates

ZnxSnyOz thin films (<100nm thickness), deposited by remote sputtering from a metal target using a confined argon plasma and oxygen gas jet near the sample, were investigated for their material properties. No visible deformation or curl was observed when deposited on plastic. Materials were confirmed to be amorphous and range between 5 and 10 at.% Sn concentration by x-ray diffraction, x-ray photoemission spectroscopy and energydispersive x-ray spectroscopy. Factors affecting the material composition over time are discussed. Depletion of the Sn as the target ages is suspected. © The Electrochemical Society.

Amorphous oxide semiconductor TFTs for displays and imaging

© 2013 IEEE. This paper reviews the mechanisms underlying visible light detection based on phototransistors fabricated using amorphous oxide semiconductor technology. Although this family of materials is perceived to be optically transparent, the presence of oxygen deficiency defects, such as vacancies, located at subgap states, and their ionization under illumination, gives rise to absorption of blue and green photons. At higher energies, we have the usual band-to-band absorption. In particular, the oxygen defects remain ionized even after illumination ceases, leading to persistent photoconductivity, which can limit the frame-rate of active matrix imaging arrays. However, the persistence in photoconductivity can be overcome through deployment of a gate pulsing scheme enabling realistic frame rates for advanced applications such as sensor-embedded display for touch-free interaction.

Amorphous silicon thin film transistor biosensing system

Electronic systems are a very good platform for sensing biological signals for fast point-of-care diagnostics or threat detection. One of the solutions is the lab-on-a-chip integrated circuit (IC), which is low cost and high reliability, offering the possibility for label-free detection. In recent years, similar integrated biosensors based on the conventional complementary metal oxide semiconductor (CMOS) technology have been reported. However, post-fabrication processes are essential for all classes of CMOS biochips, requiring biocompatible electrode deposition and circuit encapsulation. In this work, we present an amorphous silicon (a-Si) thin film transistor (TFT) array based sensing approach, which greatly simplifies the fabrication procedures and even decreases the cost of the biosensor. The device contains several identical sensor pixels with amplifiers to boost the sensitivity. Ring oscillator and logic circuits are also integrated to achieve different measurement methodologies, including electro-analytical methods such as amperometric and cyclic voltammetric modes. The system also supports different operational modes. For example, depending on the required detection arrangement, a sample droplet could be placed on the sensing pads or the device could be immersed into the sample solution for real time in-situ measurement. The entire system is designed and fabricated using a low temperature TFT process that is compatible to plastic substrates. No additional processing is required prior to biological measurement. A Cr/Au double layer is used for the biological-electronic interface. The success of the TFT-based system used in this work will open new avenues for flexible label-free or low-cost disposable biosensors. © 2013 Materials Research Society.