Wavelength conversion using semiconductor optical amplifiers

This paper reports a detailed theoretical study of the dynamics of wavelength conversion using cross-gain and cross-phase modulation in semiconductor optical amplifiers (SOA's) involving a large signal, multisection rate equation model. Using this model, recently reported experimental results have been correctly predicted and the effects of electrical and optical pumping on the conversion speed, modulation index, and phase variation of the converted signal have been considered. The model predicts, in agreement with experimental data, that recovery rates as low as 12 ps are possible if signal and pump powers in excess of 14 dBm are used. It also indicates that conversion speeds up to 40 Gb/s may be achieved with less than 3 dB dynamic penalty. The employment of cross-phase modulation increases the speed allowing, for example, an improvement to 60 Gb/s with an excess loss penalty less than 1 dB.

Long-wavelength monolithic mode-locked diode lasers

A detailed study of the design issues relevant to long-wavelength monolithic mode-locked lasers is presented. Following a detailed review of the field, we have devised a validated travelling wave model to explore the limits of mode-locking in monolithic laser diodes, not only in terms of pulse duration and repetition rate, but also in terms of stability. It is shown that fast absorber recovery is crucial for short pulse width, that the ratio of gain to absorption saturation is key in accessing ultrashort pulses and that low alpha factors give only modest benefit. Finally, optimized contact layouts are shown to greatly enhance pulse stability and the overall operational success. The design rules show high levels of consistency with published experimental data.

Directly modulated wavelength-multiplexed integrated microring laser array

The first demonstration of a directly modulated microring laser array is presented for on-off keyed, wavelength- division- multiplexed fiber-optic data transmission. GaInAsP-InP microring resonators oscillating at separate wavelengths in the 1.5-μm band are vertically coupled to a common passive waveguide bus, which is fabricated on the reverse side of the InP membrane. Two microrings defined with radii for a wavelength channel separation of 6 nm have been assessed for both individual and simultaneous operation. Negligible power penalty (<0.2 dB) is observed for wavelength-division-multiplexed operation with and without transmission over a 25-km fiber span in a manner which indicates low crosstalk between the integrated sources. A device area of less than 0.12 mm2 per microring on a common passive bus allows a highly scalable solution for short-reach wavelength-multiplexed links. © 2008 IEEE.

Hybridisation platform demonstrating all optical wavelength conversion at 10 and 20Gbit/s

The development of a high performance hybrid integration platform is demonstrated using an all optical wavelength converter based on an integrated SOA MZI. The device structure, transfer functions, power penalties and regenerative properties are presented. © 2004 Optical Society of America.

Tunable hydrodynamic chromatography of microparticles localized in short microchannels.

This paper describes a new way to perform hydrodynamic chromatography (HDC) for the size separation of particles based on a unique recirculating flow pattern. Pressure-driven (PF) and electro-osmotic flows (EOF) are opposed in narrow glass microchannels that expand at both ends. The resulting bidirectional flow turns into recirculating flow because of nonuniform microchannel dimensions. This hydrodynamic effect, combined with the electrokinetic migration of the particles themselves, results in a trapping phenomenon, which we have termed flow-induced electrokinetic trapping (FIET). In this paper, we exploit recirculating flow and FIET to perform a size-based separation of samples of microparticles trapped in a short separation channel using a HDC approach. Because these particles have the same charge (same zeta potential), they exhibit the same electrophoretic mobility, but they can be separated according to size in the recirculating flow. While trapped, particles have a net drift velocity toward the low-pressure end of the channel. When, because of a change in the externally applied PF or electric field, the sign of the net drift velocity reverses, particles can escape the separation channel in the direction of EOF. Larger particles exhibit a larger net drift velocity opposing EOF, so that the smaller particles escape the separation channel first. In the example presented here, a sample plug containing 2.33 and 2.82 microm polymer particles was introduced from the inlet into a 3-mm-long separation channel and trapped. Through tuning of the electric field with respect to the applied PF, the particles could be separated, with the advantage that larger particles remained trapped. The separation of particles with less than 500 nm differences in diameter was performed with an analytical resolution comparable to that of baseline separation in chromatography. When the sample was not trapped in the separation channel but located further downstream, separations could be carried out continuously rather than in batch. Smaller particles could successfully pass through the separation channel, and particles were separated by size. One of the main advantages of exploiting FIET for HDC is that this method can be applied in quite short (a few millimeters) channel geometries. This is in great contrast to examples published to date for the separation of nanoparticles in much longer micro- and nanochannels.

Tunable electronic transport characteristics of surface-architecture-controlled ZnO nanowire field effect transistors.

Surface-architecture-controlled ZnO nanowires were grown using a vapor transport method on various ZnO buffer film coated c-plane sapphire substrates with or without Au catalysts. The ZnO nanowires that were grown showed two different types of geometric properties: corrugated ZnO nanowires having a relatively smaller diameter and a strong deep-level emission photoluminescence (PL) peak and smooth ZnO nanowires having a relatively larger diameter and a weak deep-level emission PL peak. The surface morphology and size-dependent tunable electronic transport properties of the ZnO nanowires were characterized using a nanowire field effect transistor (FET) device structure. The FETs made from smooth ZnO nanowires with a larger diameter exhibited negative threshold voltages, indicating n-channel depletion-mode behavior, whereas those made from corrugated ZnO nanowires with a smaller diameter had positive threshold voltages, indicating n-channel enhancement-mode behavior.