Shaping pulse transitions by active voltage control for reduced EMI generation

High-performance power switching devices (IGBT/MOSFET) realise high-performance power converters. Unfortunately, with a high switching speed of the IGBT or MOSFET freewheel diode chopper cell, the circuit has intrinsic sources of high-level EMI. Therefore, costly EMI filters or shielding are normally demanded on the load and supply side. Although an S-shaped voltage transient with a high order of derivation eliminates the discontinuity and could suppress HF spectrum of EMI emissions, a practical control scheme is still under development. In this paper, Active Voltage Control (AVC) is applied to successfully define IGBT switching dynamics with a smoothed Gaussian waveform so a reduced EMI can be achieved without extra EMI suppression devices. © 2013 IEEE.

Tunable Rashba effect in two-dimensional LaOBiS2 films: Ultrathin candidates for spin field effect transistors

Rashba spin splitting is a two-dimensional (2D) relativistic effect closely related to spintronics. However, so far there is no pristine 2D material to exhibit enough Rashba splitting for the fabrication of ultrathin spintronic devices, such as spin field effect transistors (SFET). On the basis of first-principles calculations, we predict that the stable 2D LaOBiS2 with only 1 nm of thickness can produce remarkable Rashba spin splitting with a magnitude of 100 meV. Because the medium La2O2 layer produces a strong polar field and acts as a blocking barrier, two counter-helical Rashba spin polarizations are localized at different BiS 2 layers. The Rashba parameter can be effectively tuned by the intrinsic strain, while the bandgap and the helical direction of spin states sensitively depends on the external electric field. We propose an advanced Datta-Das SFET model that consists of dual gates and 2D LaOBiS2 channels by selecting different Rashba states to achieve the on-off switch via electric fields. © 2013 American Chemical Society.

Building global products and competing in innovation: The role of chinese university spin-outs and required innovation capabilities

Usually, firms that produce innovative global products are discussed within the context of developed countries. New ventures in developing countries are typically viewed as low-cost product providers that generate technologically similar products to those produced by developed economies. However, this paper argues that some Chinese university spin-outs (USOs), although rare, have adopted a novel 'catch-up' strategy to build global products on the basis of indigenous platform technologies. This paper attempts to develop a conceptual framework to address the question: how do these specific Chinese USOs develop their innovation capabilities to build global products? In order to explore the idiosyncrasies of the specific USOs, this paper uses the multiple case studies method. The primary data sources are accessed through semi-structured interviews. In addition, archival data and other materials are used as secondary sources. The study analyses the configuration of capabilities that are needed for idiosyncratic growth, and maps them to the globalisation processes. This paper provides a strategic 'roadmap' as an explanatory guide to entrepreneurs, policy makers and investors to better understand the phenomena. © 2014 Inderscience Enterprises Ltd.