441 resultados para semiconductor lasers


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We present a method to experimentally characterize the gain filter and calculate a corresponding parabolic gain bandwidth of lasers that are described by "class A" dynamics by solving the master equation of spectral condensation for Gaussian spectra. We experimentally determine the gain filter, with an equivalent parabolic gain bandwidth of up to 51 nm, for broad-band InGaAs/GaAs quantum well gain surface-emitting semiconductor laser structures capable of producing pulses down to 60 fs width when mode-locked with an optical Stark saturable absorber mirror. © 2010 Optical Society of America.

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This paper demonstrates the respective roles that combined gain- and index-coupling play in the dynamic properties and overall link performance of DFB lasers. It is shown that for datacommunication applications, modest gain-coupling enables optimum transmission at 10Gbit/s.

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This paper demonstrates the respective roles that combined index- and gain-coupling play in the overall link performance of distributed feedback (DFB) lasers. Their impacts on both static and dynamic properties such as slope efficiency, resonance frequency, damping rate, and chirp are investigated. Simulation results are compared with experimental data with good agreement. Transmission-oriented optimization is then demonstrated based on a targeted specification. The design tradeoffs are revealed, and it is shown that a modest combination of index- and gain-coupling enables optimum transmission at 10 Gbit/s.

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Herein we report a low-threshold organic laser device based on semiconducting poly(9, 9′ -dioctylfluoren-2,7-diyl-alt-benzothiadiazole) (F8BT) encapsulated in a mechanically stretchable polydimethylsiloxane (PDMS) matrix. We take advantage of the natural flexibility of PDMS to alter the periodicity of the distributed feedback grating which in turn tunes the gain wavelength at which the resonant feedback is obtained. This way, we demonstrate that low-threshold lasing [6.1 μJ cm-2 (5.3 nJ)] is maintained over a large stretching range of 0%-7% which translates into a tuning range of about 20 nm. © 2010 American Institute of Physics.

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A new form of ultrafast bistable polarization switching in twin-stripe injection lasers has been observed. For the first time, triggering between bistable states has been achieved by injecting light from a neighboring laser integrated on the same chip. Ultrafast switching times of 250 ps have been measured (detector limited).