Electro-optic modulation of 1.5μm light in an active InGaAsP/InP quantum well waveguide

We report an InGaAsP/InP phase modulator operating in the 1.5μm wavelength band. Phase modulation of 7.5°/mA and 1.7°/mA of injected current have been measured for TE and TM polarised light respectively at a signal wavelength of 1.52 μm.

An experimental investigation of RoF-enabled MIMO das in a non-light-of-sight environment

The performance of a 3 × 3 MIMO system using RoF-enabled DAS technology is experimentally investigated in a Non-Line-Of-Sight environment. Reduced spatial correlation and improved SNR are achieved due to the larger antenna separation. © 2011 OSA.

Tuning of the electronic characteristics of ZnO nanowire field effect transistors by proton irradiation.

We demonstrated a controllable tuning of the electronic characteristics of ZnO nanowire field effect transistors (FETs) using a high-energy proton beam. After a short proton irradiation time, the threshold voltage shifted to the negative gate bias direction with an increase in the electrical conductance, whereas the threshold voltage shifted to the positive gate bias direction with a decrease in the electrical conductance after a long proton irradiation time. The electrical characteristics of two different types of ZnO nanowires FET device structures in which the ZnO nanowires are placed on the substrate or suspended above the substrate and photoluminescence (PL) studies of the ZnO nanowires provide substantial evidence that the experimental observations result from the irradiation-induced charges in the bulk SiO(2) and at the SiO(2)/ZnO nanowire interface, which can be explained by a surface-band-bending model in terms of gate electric field modulation. Our study on the proton-irradiation-mediated functionalization can be potentially interesting not only for understanding the proton irradiation effects on nanoscale devices, but also for creating the property-tailored nanoscale devices.

Pixelated liquid-crystal light valve for neural network application.

The liquid-crystal light valve (LCLV) is a useful component for performing integration, thresholding, and gain functions in optical neural networks. Integration of the neural activation channels is implemented by pixelation of the LCLV, with use of a structured metallic layer between the photoconductor and the liquid-crystal layer. Measurements are presented for this type of valve, examples of which were prepared for two specific neural network implementations. The valve fabrication and measurement were carried out at the State Optical Institute, St. Petersburg, Russia, and the modeling and system applications were investigated at the Institute of Microtechnology, Neuchâtel, Switzerland.