Analysis of the mechanisms for impaired high-temperature, high-speed performance of 1.3 μm InGaAsP lasers

In this paper, the static and dynamic performance of multi quantum-well (MQW) 1.3 μm InGaAsP Fabry Perot lasers is assessed experimentally and theoretically to identify the mechanisms responsible for impaired high speed performance at elevated temperature. Initially, threshold currents and spontaneous emission spectra are characterized for a range of temperatures from room temperature to 85 °C to indicate a significant increase in non-radiative current contributions. Preliminary estimates are made for the contributions of leakage and Auger recombination rates, found from the dependence of integrated spontaneous emission with carrier density. Drift-diffusion modelling is found to accurately predict the trend of threshold currents over temperature. Using gain modelling good agreement is found between the measured and predicted integrated spontaneous emission intensity. Gain measurements at 85 °C indicate a reduction in RIN frequency to 63% of the 25 °C value which matches well with experimental small signal performance.

Grain boundaries in multi-seeded melt-grown superconductors

Future applications of high temperature superconductors require bulk materials of a complex shape. The multi-seeded-melt-growth process (MSMG) represents a promising technique for obtaining qualitatively well oriented bulk materials with different kinds of shape. In the MSMG process, several seeds are placed on a precursor pellet, from which the growth of the bulk starts. A certain problem of the MSMG process is that grain boundaries become inevitable when the growth fronts of two neighboring seeds collide. These grain boundaries are responsible for a reduction of the critical currents and pose a problem for high current applications. By polishing the sample step by step, the influence of the grain boundaries was investigated by scanning Hall probe measurements and by the magnetoscan technique. Additionally, optical microscopy and electron microscopy were employed to investigate the details of the microstructure. © 2005 IEEE.