CHANGES IN PREDICTED MOS DEVICE CHARACTERISTICS DUE TO THE USE OF TWO DIMENSIONAL SOURCE/DRAIN PROFILES.

Two-dimensional MOS device simulation programs such as MINIMOS left bracket 1 right bracket are limited in their validity due to assumptions made in defining the initial two-dimensional source/drain profiles. The two options available to define source/drain regions both construct a two-dimensional profile from one-dimensional profiles normal to the surface. Inaccuracies in forming these source/drain profiles can be expected to effect predicted device characteristics as channel dimensions of the device are reduced. This paper examines these changes by interfacing numerically similated two dimensional source/drain profiles to MINIMOS and comparing predicted I//D-V//D characteristics with 2-D interfacing, 2-D profiles constructed from interfaced 1-D profiles and MINIMOS self generated profiles. Data obtained for simulations of 3 mu m N and P channel devices are presented.

The fluid mechanics of a two-dimensional Aaberg exhaust hood

In this paper a study of the air flow pattern created by a two-dimensional Aaberg exhaust hood local ventilation system is presented. A mathematical model of the flow, in terms of the stream function ψ, is derived analytically for both laminar and turbulent injections of fluid. Streamlines and lines of constant speed deduced from the model are examined for various values of the governing dimensionless operating parameter and predictions are given as to the area in front of the hood from which the air can be sampled. The effect of the injection of fluid on the centre-line velocity of the flow is examined and a comparison of the results with the available experimental data is given. © 1992.