Carrier lifetime and mobility enhancement in nearly defect-free core-shell nanowires measured using time-resolved terahertz spectroscopy.

We have used transient terahertz photoconductivity measurements to assess the efficacy of two-temperature growth and core-shell encapsulation techniques on the electronic properties of GaAs nanowires. We demonstrate that two-temperature growth of the GaAs core leads to an almost doubling in charge-carrier mobility and a tripling of carrier lifetime. In addition, overcoating the GaAs core with a larger-bandgap material is shown to reduce the density of surface traps by 82%, thereby enhancing the charge conductivity.

Defect-free GaAs/AlGaAs Core-shell nanowires on Si substrates

We report straight and vertically aligned defect-free GaAs nanowires grown on Si(111) substrates by metal-organic chemical vapor deposition. By deposition of thin GaAs buffer layers on Si substrates, these nanowires could be grown on the buffer layers with much less stringent conditions as otherwise imposed by epitaxy of III-V compounds on Si. Also, crystal-defect-free GaAs nanowires were grown by using either a two-temperature growth mode consisting of a short initial nucleation step under higher temperature followed by subsequent growth under lower temperature or a rapid growth rate mode with high source flow rate. These two growth modes not only eliminated planar crystallographic defects but also significantly reduced tapering. Core-shell GaAs-AlGaAs nanowires grown by the two-temperature growth mode showed improved optical properties with strong photoluminescence and long carrier life times. © 2011 American Chemical Society.

On-chip switching of a silicon nitride micro-ring resonator based on digital microfluidics platform.

We demonstrate the switching of a silicon nitride micro ring resonator (MRR) by using digital microfluidics (DMF). Our platform allows driving micro-droplets on-chip, providing control over the effective refractive index at the vicinity of the resonator and thus facilitating the manipulation of the transmission spectrum of the MRR. The device is fabricated using a process that is compatible with high-throughput silicon fabrication techniques with buried highly doped silicon electrodes. This platform can be extended towards controlling arrays of micro optical devices using minute amounts of liquid droplets. Such an integration of DMF and optical resonators on chip can be used in variety of applications, ranging from biosensing and kinetics to tunable filtering on chip.

Manufacturing dish shaped rings on radial-axial ring rolling mills

Ring rolling is an established method to produce seamless rings of different cross-sectional geometries. For dish shaped rings, there are applications in different areas such as offshore, aeronautics or the energy sector. At the moment, dish shaped rings are produced by machining of rings with rectangular shaped cross section, by (open die) hollow forging on a conical mandrel or by using shaped ring rolling tools. These ways of manufacturing have the disadvantage of high material waste, additional costs for special tools, long process time and limited or inflexible geometries. Therefore, the manufacturing of dish shaped rings on conventional radial-axial ring rolling mills would expand the range of products for ring producers. The aim of this study is to investigate the feasibility of an alternative to the current manufacturing processes, without requiring additional tooling and material costs. Therefore, the intended formation of dish shaped rings-previously regarded as a form error-is investigated. Based on an analysis of geometrical requirements and metal flow mechanisms, a rolling strategy is presented, causing dishing and ring climbing by a large height reduction of the ring. Using this rolling strategy dish shaped rings with dishing angles up to 18° were achieved. In addition to the experiments finite element method (FEM)-simulations of the process have been successfully conducted, in order to analyze the local strain evolution. However, when the contact between ring and main roll is lost in the process the ring starts to oscillate around the mandrel and neither dishing nor ring climbing is observed. © 2013 German Academic Society for Production Engineering (WGP).

Numerical simulations supporting the process design of ring rolling processes

In conventional Finite Element Analysis (FEA) of radial-axial ring rolling (RAR) the motions of all tools are usually defined prior to simulation in the preprocessing step. However, the real process holds up to 8 degrees of freedom (DOF) that are controlled by industrial control systems according to actual sensor values and preselected control strategies. Since the histories of the motions are unknown before the experiment and are dependent on sensor data, the conventional FEA cannot represent the process before experiment. In order to enable the usage of FEA in the process design stage, this approach integrates the industrially applied control algorithms of the real process including all relevant sensors and actuators into the FE model of ring rolling. Additionally, the process design of a novel process 'the axial profiling', in which a profiled roll is used for rolling axially profiled rings, is supported by FEA. Using this approach suitable control strategies can be tested in virtual environment before processing. © 2013 AIP Publishing LLC.

Finite element analysis of the ring rolling process with integrated closed-loop control

In FEA of ring rolling processes the tools' motions usually are defined prior to simulation. This procedure neglects the closed-loop control, which is used in industrial processes to control up to eight degrees of freedom (rotations, feed rates, guide rolls) in real time, taking into account the machine's performance limits as well as the process evolution. In order to close this gap in the new simulation approach all motions of the tools are controlled according to sensor values which are calculated within the FE simulation. This procedure leads to more realistic simulation results in comparison to the machine behaviour. © 2012 CIRP.

Low-bias terahertz amplitude modulator based on split-ring resonators and graphene.

Split-ring resonators represent the ideal route to achieve optical control of the incident light at THz frequencies. These subwavelength metamaterial elements exhibit broad resonances that can be easily tuned lithographically. We have realized a design based on the interplay between the resonances of metallic split rings and the electronic properties of monolayer graphene integrated in a single device. By varying the major carrier concentration of graphene, an active modulation of the optical intensity was achieved in the frequency range between 2.2 and 3.1 THz, achieving a maximum modulation depth of 18%, with a bias as low as 0.5 V.

Bismuth-doped fiber integrated ring laser mode-locked with a nanotube-based saturable absorber

We demonstrate passive mode-locking of a bismuth-doped fiber laser using a single-wall nanotube-based saturable absorber. Stable operation in the all-normal dispersion and average soliton regime is obtained, with an all-fiber integrated format. © 2010 Optical Society of America.

Defect-assisted sub-bandgap avalanche photodetection in interleaved carrier-depletion silicon waveguide for telecom band

This paper demonstrates on chip sub bandgap detection of light at 1550 nm wavelength using the configuration of interleaved PN junctions along a silicon waveguide. The device operates under reverse bias in a nearly fully depleted mode, thus minimizing the free carrier plasma losses and significantly increases the detection volume at the same time. Furthermore, substantial enhancement in responsivity is observed by the transition from reverse bias to avalanche breakdown regime. The observed high responsivity of up to 7.2 mA/W at 3 V is attributed to defect assisted photogeneration, where the defects are related to the surface and the bulk of the waveguide. © 2014 AIP Publishing LLC.