Diameter and wall number control of carbon nanotubes by chemical vapor deposition

We analyze the relationship between the average wall number (N) and the diameter (d) for carbon nanotubes (CNTs) grown by chemical vapour deposition. It is found that N depends linearly on d for diameters in the range of 2.5-10 nm, while single wall nanotubes predominate for diameters under about 2.1 nm. The linear relationship is found to depend somewhat on the growth conditions. It is also verified that the mean diameter depends on the diameter of the originating catalyst nanoparticle, and thus on the initial catalyst thickness where a thin film catalyst is used. This simplifies the characterisation of CNTs by electron microscopy. We also find a linear relationship between nanotube diameter and initial catalyst film thickness. © 2013 AIP Publishing LLC.

Near field phase mapping exploiting intrinsic oscillations of aperture NSOM probe.

An innovative, simple, compact and low cost approach for phase mapping based on the intrinsic modulation of an aperture Near Field Scanning Optical Microscope probe is analyzed and experimentally demonstrated. Several nanoscale silicon waveguides are phase-mapped using this approach, and the different modes of propagation are obtained via Fourier analysis. The obtained measured results are in good agreement with the effective indexes of the modes calculated by electromagnetic simulations. Owing to its simplicity and effectiveness, the demonstrated system is a potential candidate for integration with current near field systems for the characterization of nanophotonic components and devices.

Near field phase mapping exploiting intrinsic oscillations of aperture NSOM probe

An innovative, simple, compact and low cost approach for phase mapping based on the intrinsic modulation of an aperture Near Field Scanning Optical Microscope probe is analyzed and experimentally demonstrated. Several nanoscale silicon waveguides are phase-mapped using this approach, and the different modes of propagation are obtained via Fourier analysis. The obtained measured results are in good agreement with the effective indexes of the modes calculated by electromagnetic simulations. Owing to its simplicity and effectiveness, the demonstrated system is a potential candidate for integration with current near field systems for the characterization of nanophotonic components and devices. © 2011 Optical Society of America.

Probing the critical electronic properties of III-V nanowires using optical pump-terahertz probe spectroscopy

Optical pump-terahertz probe spectroscopy was used to study the key electronic properties of GaAs, InAs and InP nanowires at room temperature. Of all nanowires studied, InAs nanowires exhibited the highest mobilities of 6000 cm2V-1s-1. InP nanowires featured the longest photoconductivity lifetimes and an exceptionally low surface recombination velocity of 170 cm/s. © 2013 IEEE.

Near field phase mapping exploiting intrinsic oscillations of NSOM probe

An innovative, simple compact and low cost approach for phase mapping based on the intrinsic modulation of a Near Field Scanning Optical Microscope probe is analyzed and experimentally demonstrated. © OSA/ CLEO 2011.

Dense active appearance models using a bounded diameter minimum spanning tree

We present a method for producing dense Active Appearance Models (AAMs), suitable for video-realistic synthesis. To this end we estimate a joint alignment of all training images using a set of pairwise registrations and ensure that these pairwise registrations are only calculated between similar images. This is achieved by defining a graph on the image set whose edge weights correspond to registration errors and computing a bounded diameter minimum spanning tree (BDMST). Dense optical flow is used to compute pairwise registration and we introduce a flow refinement method to align small scale texture. Once registration between training images has been established we propose a method to add vertices to the AAM in a way that minimises error between the observed flow fields and a flow field interpolated between the AAM mesh points. We demonstrate a significant improvement in model compactness using the proposed method and show it dealing with cases that are problematic for current state-of-the-art approaches.

Atom probe tomography of SRAM transistors: Specimen preparation methods and analysis

Different FIB-based sample preparation methods for atom probe analysis of transistors have been proposed and discussed. A special procedure, involving device deprocessing, has been used to analyze by APT a sub-30 nm transistor extracted from a SRAM device. The analysis provides three dimensional compositions of Ni-silicide contact, metal gate and high-k oxide of the transistor gate. © 2013 Elsevier B.V. All rights reserved.

Modal control of a 50μm core diameter multimode fiber using a spatial light modulator

An iterative, self-correcting system for doing modal control using adaptive optics in a 50μm core diameter multimode fiber (MMF) is designed. It is shown experimentally to reduce the number of modes generated by 300%. © 2006 Optical Society of America.

Modal control of a 50μm core diameter multimode fiber using a spatial light modulator

An iterative, self-correcting system for doing modal control using adaptive optics in a 50μm core diameter multimode fiber (MMF) is designed. It is shown experimentally to reduce the number of modes generated by 300%. © 2006 Optical Society of America.

Ni silicide nanowires analysis by atom probe tomography

The Ni silicide formed at low temperature on Si nanowire has been analyzed by atom probe tomography (APT) thanks to a special technique for sample preparation. A method of preparation has been developed using the focused ion beam (FIB) for the APT analysis of nanowires (NWs). This method allow for the measurement of the radial distribution when a NW is cut, buried in a protective metal matrix, and finally mounted on the APT support post. This method was used for phosphorous doped Si NWs with or without a silicide shell, and allows obtaining the concentration and distribution of chemical elements in three-dimensions (3D) in the radial direction of the NWs. The distribution of atoms in the NWs has been measured including dopants and Au contamination. These measurements show that δ-Ni2Si phase is formed on Si NW, Au is found as cluster at the Ni/δ-Ni2Si interface and P is segregated at the δ-Ni2Si/ Si NW interface. The results obtained on NWs after silicidation were compared with the silicide on the Si substrate, showing that the same silicide phase δ-Ni2Si formed in both cases (NWs and substrate). © 2013 Elsevier B.V. All rights reserved.

Atom probe tomography for advanced metallization

In microelectronics, the increase in complexity and the reduction of devices dimensions make essential the development of new characterization tools and methodologies. Indeed advanced characterization methods with very high spatial resolution are needed to analyze the redistribution at the nanoscale in devices and interconnections. The atom probe tomography has become an essential analysis to study materials at the nanometer scale. This instrument is the only analytical microscope capable to produce 3D maps of the distribution of the chemical species with an atomic resolution inside a material. This technique has benefit from several instrumental improvements during last years. In particular, the use of laser for the analysis of semiconductors and insulating materials offers new perspectives for characterization. The capability of APT to map out elements at the atomic scale with high sensitivity in devices meets the characterization requirements of semiconductor devices such as the determination of elemental distributions for each device region. In this paper, several examples will show how APT can be used to characterize and understand materials and process for advanced metallization. The possibilities and performances of APT (chemical analysis of all the elements, atomic resolution, planes determination, crystallographic information...) will be described as well as some of its limitations (sample preparation, complex evaporation, detection limit, ...). The examples illustrate different aspect of metallization: dopant profiling and clustering, metallic impurities segregation on dislocation, silicide formation and alloying, high K/metal gate optimization, SiGe quantum dots, as well as analysis of transistors and nanowires. © 2013 Elsevier B.V. All rights reserved.