Investigation of flame stretch in turbulent lifted jet flame

DNS data of a laboratory-scale turbulent lifted hydrogen jet flame has been analyzed to show that this flame has mixed mode combustion not only at the flame base but also in downstream locations. The mixed mode combustion is observed in instantaneous structures as in earlier studies and in averaged structure, in which the predominant mode is found to be premixed combustion with varying equivalence ratio. The non-premixed combustion in the averaged structure is observed only in a narrow region at the edge of the jet shear layer. The analyzes of flame stretch show large probability for negative flame stretch leading to negative surface averaged flame stretch. The displacement speed-curvature correlation is observed to be negative contributing to the negative flame stretch and partial premixing resulting from jet entrainment acts to reduce the negative correlation. The contribution of turbulent straining to the flame stretch is observed to be negative when the scalar gradient aligns with the most extensive principal strain rate. The physics behind the negative flame stretch resulting from turbulent straining is discussed and elucidated through a simple analysis of the flame surface density transport equation. © 2014 Copyright Taylor and Francis Group, LLC.

A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under simultaneous negative gate bias and illumination

It has been previously observed that thin film transistors (TFTs) utilizing an amorphous indium gallium zinc oxide (a-IGZO) semiconducting channel suffer from a threshold voltage shift when subjected to a negative gate bias and light illumination simultaneously. In this work, a thermalization energy analysis has been applied to previously published data on negative bias under illumination stress (NBIS) in a-IGZO TFTs. A barrier to defect conversion of 0.65-0.75 eV is extracted, which is consistent with reported energies of oxygen vacancy migration. The attempt-to-escape frequency is extracted to be 10 6-107 s-1, which suggests a weak localization of carriers in band tail states over a 20-40 nm distance. Models for the NBIS mechanism based on charge trapping are reviewed and a defect pool model is proposed in which two distinct distributions of defect states exist in the a-IGZO band gap: these are associated with states that are formed as neutrally charged and 2+ charged oxygen vacancies at the time of film formation. In this model, threshold voltage shift is not due to a defect creation process, but to a change in the energy distribution of states in the band gap upon defect migration as this allows a state formed as a neutrally charged vacancy to be converted into one formed as a 2+ charged vacancy and vice versa. Carrier localization close to the defect migration site is necessary for the conversion process to take place, and such defect migration sites are associated with conduction and valence band tail states. Under negative gate bias stressing, the conduction band tail is depleted of carriers, but the bias is insufficient to accumulate holes in the valence band tail states, and so no threshold voltage shift results. It is only under illumination that the quasi Fermi level for holes is sufficiently lowered to allow occupation of valence band tail states. The resulting charge localization then allows a negative threshold voltage shift, but only under conditions of simultaneous negative gate bias and illumination, as observed experimentally as the NBIS effect. © 2014 AIP Publishing LLC.

Local strain rate and curvature dependences of scalar dissipation rate transport in turbulent premixed flames: A direct numerical simulation analysis

The statistical behaviours of the instantaneous scalar dissipation rate Nc of reaction progress variable c in turbulent premixed flames have been analysed based on three-dimensional direct numerical simulation data of freely propagating statistically planar flame and V-flame configurations with different turbulent Reynolds number Ret. The statistical behaviours of N c and different terms of its transport equation for planar and V-flames are found to be qualitatively similar. The mean contribution of the density-variation term T1 is positive, whereas the molecular dissipation term (-D2) acts as a leading order sink. The mean contribution of the strain rate term T2 is predominantly negative for the cases considered here. The mean reaction rate contribution T3 is positive (negative) towards the unburned (burned) gas side of the flame, whereas the mean contribution of the diffusivity gradient term (D) assumes negative (positive) values towards the unburned (burned) gas side. The local statistical behaviours of Nc, T1, T2, T 3, (-D2), and f(D) have been analysed in terms of their marginal probability density functions (pdfs) and their joint pdfs with local tangential strain rate aT and curvature km. Detailed physical explanations have been provided for the observed behaviour. © 2014 Y. Gao et al.

Negative Effects of Relative Proximity and Absolute Geography on Open Innovation Practices in High-tech SMEs in the UK

© 2014 IEEE. This exploratory study addresses a gap in management literature by addressing the role of location in the continuously expanding field of open innovation research. In this context, we analyze potential negative effects of absolute geography and relative proximity on open innovation practices in high-tech small and medium-sized enterprises (SMEs) in the United Kingdom. Drawing upon cluster theory and business ecosystem literature, the analysis from three SME case studies in the East of England suggests that presumed 'favorable' location variables, such as close relative proximity between partners and the presence of economic clusters, can have certain negative effects on open innovation practices.