1.4 kV, 25 A, PT and NPT Trench IGBTs with optimum forward characteristics

In this paper we report the development of 1.4 kV 25 A PT and NPT Trench IGBTs with ultra-low on-resistance, latch-up free operation and highly superior overall performance when compared to previously reported DMOS IGBTs in the same class. We have fabricated both PT and transparent anode NPT devices to cover a wide range of applications which require very low on-state losses or very fast time with ultra-low switching losses. The minimum forward voltage drop at the standard current density of 100A/cm2 was 1.1 V for PT non-irradiated devices and 2.1 V for 16 MRad PT irradiated devices. The non-irradiated transparent emitter NPT structure has a typical forward voltage drop of 2.2 V, a turn-off time below 100 ns and turn-off energy losses of 11.2 mW/cm2 at 125 C. The maximum controllable current density was in excess of 1000A/cm2.

Low-cost PCB-integrated polymer waveguide sensor for gas detection

An optical waveguide sensor formed directly on low-cost PCB substrates is presented for the first time. The device integrates polymer waveguides functionalized with chemical dyes, photonic and electronic components and allows multiple-gas detection. © 2011 OSA.

Polychromatic liquid crystal laser arrays towards display applications.

Band-edge liquid crystal lasers are of interest for a number of applications including laser projection displays. Herein, we demonstrate simultaneous red-green-blue lasing from a single liquid crystal sample by creating a two-dimensional laser array fabricated from dye-doped chiral nematic liquid crystals. By forming a pitch gradient across the cell, and optically pumping the sample using a lenslet array, a polychromatic laser array can be observed consisting simultaneously of red-green-blue colors. Specifically, the two-dimensional polychromatic array could be used to produce a laser-based display, with low speckle and wide color gamut, whereby no complex fabrication procedure is required to generate the individual 'pixels'.

Applications of stochastic context-free grammars using the Inside-Outside algorithm

This paper describes two applications in speech recognition of the use of stochastic context-free grammars (SCFGs) trained automatically via the Inside-Outside Algorithm. First, SCFGs are used to model VQ encoded speech for isolated word recognition and are compared directly to HMMs used for the same task. It is shown that SCFGs can model this low-level VQ data accurately and that a regular grammar based pre-training algorithm is effective both for reducing training time and obtaining robust solutions. Second, an SCFG is inferred from a transcription of the speech used to train a phoneme-based recognizer in an attempt to model phonotactic constraints. When used as a language model, this SCFG gives improved performance over a comparable regular grammar or bigram. © 1991.

MOS and bipolar gated thyristor: A thyristor with IGBT switching characteristics

The IGBT has become the device of choice in many high-voltage-power electronic applications, by virtue of combining the ease of MOS gate control with an acceptable forward voltage drop. However, designers have retained an interest in MOS gated thyristor structures which have a turn-off capability. These offer low on-state losses as a result of their latching behaviour. Recently, there have been various proposals for dual-gate devices that have a thyristor on-state with IGBT-like switching. Many of these dual gated structures rely on advanced MOS technology, with inherent manufacturing difficulties. The MOS and bipolar gated thyristor offers all the advantages of dual gated performance, while employing standard IGBT processing techniques. The paper describes the MBGT in detail, and presents experimental and simulation results for devices based on realistic commercial processes. It is shown that the MBGT represents a viable power semiconductor device technology, suitable for a diverse range of applications. © IEE, 1998.

Switching speed enhancement of the LDMOSFETs using partial-SOI technology

To overcome reduced breakdown voltage and self-heating effects inherent in silicon-on-insulator (SOI) power integrated circuits while still maintaining good isolation between low power CMOS circuits and the high power cells, partial SOI (PSOI) technology has been proposed. PSOI devices make use of both buried oxide and substrate depletion to support the breakdown voltage. 2D analyses and modeling of parasitic capacitances in PSOI structures show that PSOI-lightly doped MOSFETs can increase the switching speed by as much as four times compared to conventional SOI structures, making them very attractive for high switching applications.

Nanostructuring of materials for device and sensor applications

The recent developments in nanotechnology are reviewed, with particular emphasis on its application in microsystem technology where increased reliability is achieved by integrating the sensor and the readout electronics on the same substrate. New applications may be possible using integrated micromechanical clips to connect optic fibers and components in integrated silicon systems. Some of the key developments in enabling technologies are also described, including the control of thin film deposition, nanostructuring to tailor the properties of thin film, silicon micromachining to make sensors, and microclips for the low-cost assembly of integrated optical microsystems.

Influence of voltage and frequency dimming on power losses in HF electronic ballasts for compact fluorescent lamps

Compact Fluorescent Lamps (CFL) incorporating electronic ballasts are widely used in lighting. In many cases the ability to dim the lamp is a requirement Dimming can be achieved by varying the voltage supplied to the inverter or by changing the switching frequency of the inverter. The effect of dimming by both approaches on the power losses in the inverter is studied in this work. The lamp and associated inverter has been modeled in PSPICE, using a behavioral model for the CFL. Predicted losses are in good agreement with experimental data obtained from calorimetry. The model was then used to determine the distribution of losses within the inverter, enabling a comparison of the effects of the two dimming methods to be made. © 2006 IEEE.

Degradation evaluation of microelectromechanical thermal actuators

Metal based thermal microactuators normally have lower operation temperatures than those of Si-based ones; hence they have great potential for applications. However, metal-based thermal actuators easily suffer from degradation such as plastic deformation. In this study, planar thermal actuators were made by a single mask process using electroplated nickel as the active material, and their thermal degradation has been studied. Electrical tests show that the Ni-based thermal actuators deliver a maximum displacement of ∼20μm at an average temperature of ∼420°C, much lower than that of Si-based microactuators. However, the displacement strongly depends on the frequency and peak voltage of the pulse applied. Back bending was clearly observed at a maximum temperature as low as 240°C. Both forward and backward displacements increase with increasing the temperature up to ∼450°C, and then decreases with power. Scanning electron microscopy observation clearly showed that Ni structure deforms and reflows at power above 50mW. The compressive stress is believed to be responsible for Ni piling-up (creep), while the tensile stress upon removing the pulse current is responsible for necking at the hottest section of the device. Energy dispersive X-ray diffraction analysis revealed severe oxidation of the Ni-structure induced by Joule-heating of the current.

Loss comparison between an SPWM and harmonic elimination excited small, (<1kW) induction motor drive using Pspice simulation and calorimetry

Adopting square wave excitation to drive induction motors (IMs) can substantially reduce inverter switching losses. However, the low-order time harmonics inherent in the output voltage generates parasitic torques that degrade motor performance and reduce efficiency. In this paper, a novel harmonic elimination modulation technique with full voltage control is studied as an interesting and alternative means of operating small (<1kW) IM drives efficiently. A fully verified harmonic elimination scheme, which removes the 5th, 7th, 11th, 13th and 17 th time harmonics, was implemented and applied to an IGBT driven IM. The power losses incurred in the inverter and the IM as a result of the switching scheme have been determined. © 2008 Crown copyright.

A fully integrated 660 MHz low-swing energy-recycling DC-DC converter

A fully integrated 0.18 μm DC-DC buck converter using a low-swing "stacked driver" configuration is reported in this paper. A high switching frequency of 660 MHz reduces filter components to fit on chip, but this suffers from high switching losses. These losses are reduced using: 1) low-swing drivers; 2) supply stacking; and 3) introducing a charge transfer path to deliver excess charge from the positive metal-oxide semiconductor drive chain to the load, thereby recycling the charge. The working prototype circuit converts 2.2 to 0.75-1.0 V at 40-55 mA. Design and simulation of an improved circuit is also included that further improves the efficiency by enhancing the charge recycling path, providing automated zero voltage switching (ZVS) operation, and synchronizing the half-swing gating signals. © 2009 IEEE.

Non-catalytic multi-fuel reformer for syngas production for fuel cell applications

Rich combustion of n-heptane, diesel oil, jet A-1 kerosene, and bio-diesel (rapeseed-oil methyl ester) were studied to produce hydrogen enriched gas, ready for the cleanup stages for fuel cell applications. n-heptane was successfully reformed up to an equivalence ratio of 3:1, reaching a conversion efficiency up to 83% for a packed bed of alumina bead burner. Diesel, kerosene and bio-diesel were reformed to synthesis gas with conversion efficiency up to 65%. At equivalence ratio of 2:1 and P=7 kw, stability, low HC formation, high conversion efficiency, and low soot emission were achieved. A common synthesis gas composition around this condition was 15 and 13% H2, 15 and 17% CO, and 4 and 4.5% CO2 for n-heptane and diesel, jet A-1 and bio-diesel, respectively, for burner A. This is an abstract of a paper presented at the 2010 Spring National Meeting (San Antonio, TX 3/21-25/2010).

Applications of the dynamic mode decomposition

The decomposition of experimental data into dynamic modes using a data-based algorithm is applied to Schlieren snapshots of a helium jet and to time-resolved PIV-measurements of an unforced and harmonically forced jet. The algorithm relies on the reconstruction of a low-dimensional inter-snapshot map from the available flow field data. The spectral decomposition of this map results in an eigenvalue and eigenvector representation (referred to as dynamic modes) of the underlying fluid behavior contained in the processed flow fields. This dynamic mode decomposition allows the breakdown of a fluid process into dynamically revelant and coherent structures and thus aids in the characterization and quantification of physical mechanisms in fluid flow. © 2010 Springer-Verlag.

Ultrafast sputtered ZnO thin films with high kT for acousticwave device applications

The fabrication of high frequency acoustic wave devices requires thedevelopment of thin films of piezoelectric materials with improved morphologicaland electro-acoustical properties. In particular, the crystalline orientationof the films, surface morphology, film stress and electrical resistivity are keyissues for the piezoelectric response. In the work reported here, ZnO thinfilms were deposited at high rates (>50 nm/min) using a novel process knownas the High Target Utilisation Sputtering (HiTUS). The films deposited possessexcellent crystallographic orientation, high resistivity (>109ωm), and exhibit surface roughness and film stress one order of magnitudelower than films grown with standard magnetron sputtering. The electromechanicalcoupling coefficient of the films, kT, was precisely calculated byimplementing the resonant spectrum method, and was found to be at least 6%higher than any previously reported kT of magnetron sputtered filmsto the Authors' knowledge. The low film stress of the film is deemed as one ofthe most important factors responsible for the high k T valueobtained. © 2010 IEEE.