Understanding jet noise.

Jets are one of the most fascinating topics in fluid mechanics. For aeronautics, turbulent jet-noise modelling is particularly challenging, not only because of the poor understanding of high Reynolds number turbulence, but also because of the extremely low acoustic efficiency of high-speed jets. Turbulent jet-noise models starting from the classical Lighthill acoustic analogy to state-of-the art models were considered. No attempt was made to present any complete overview of jet-noise theories. Instead, the aim was to emphasize the importance of sound generation and mean-flow propagation effects, as well as their interference, for the understanding and prediction of jet noise.

An efficient frequency-domain algorithm for wave scattering problems with application to jet noise

This paper presents a pseudo-time-step method to calculate a (vector) Green function for the adjoint linearised Euler equations as a scattering problem in the frequency domain, for use as a jet-noise propagation prediction tool. A method of selecting the acoustics-related solution in a truncated spatial domain while suppressing any possible shear-layer-type instability is presented. Numerical tests for 3-D axisymmetrical parallel mean flows against semi-analytical reference solutions indicate that the new iterative algorithm is capable of producing accurate solutions with modest computational requirements.

Short-channel polymer field-effect-transistor fabrication using spin-coating-induced edge template and ink-jet printing

A method to fabricate polymer field-effect transistors with submicron channel lengths is described. A thin polymer film is spin coated on a prepatterned resist with a low resolution to create a thickness contrast in the overcoated polymer layer. After plasma and solvent etching, a submicron-sized line structure, which templates the contour of the prepattern, is obtained. A further lift-off process is applied to define source-drain electrodes of transistors. With a combination of ink-jet printing, transistors with channel length down to 400 nm have been fabricated by this method. We show that drive current density increases as expected, while the on/off current ratio 106 is achieved. © 2005 American Institute of Physics.