The Modeling of Ion Implantation in a Three-Layer Structure Using the Method of Dose Matching

The method of modeling ion implantation in a multilayer target using moments of a statistical distribution and numerical integration for dose calculation in each target layer is applied to the modelling of As⁺ in poly-Si/SiO2/Si. Good agreement with experiment is obtained. Copyright © 1985 by The Institute of Electrical and Electronics Engineers, Inc.

Comparison between granular pillared, organo- and inorgano-organo-bentonites for hydrocarbon and metal ion adsorption

Granular reactive materials have higher permeability and are therefore desirable for in situ groundwater pollution control. Three granular bentonites were prepared: an Al-pillared bentonite (PBg), an organo-bentonite (OBg) using a quaternary ammonium cation (QAC), and an inorgano-organo-bentonite (IOBg), using both the pillaring agent and the QAC. Powdered IOB (IOBp) was also prepared to test the effect of particle size. The modified bentonites were characterised with X-ray diffraction (XRD), Fourier transform infrared spectrometry (FT-IR), thermal gravimetric analysis (TGA) and uniaxial compression tests. The d-spacing increased only with QAC intercalation. The Young's modulus of IOBg was twice as high as OBg. Batch adsorption tests were performed with aqueous multimetal solutions of Pb2+, Cu2+, Cd2+, Zn2+ and Ni2+ ions, with liquid dodecane and with aqueous dodecane solutions. Metal adsorption fit the Langmuir isotherm. Adsorption occurred within 30min for PBg, while the granular organo-bentonite needed at least 12h to reach equilibrium. IOBp had the maximum adsorption capacity at higher metal concentration and lower adsorbent content (Cu2+: 2.2, Ni2+: 1.7, Zn2+: 1.4, Cd2+: 0.9 and Pb2+: 0.7 all in mmolg-1). The dual pillaring of the QAC and Al hydroxide increased the adsorption. The adsorption of liquid dodecane was in the order IOBg>OBg>PBg (3.2>2.7>1.7mmolg-1). Therefore IOBg has potential for the removal of toxic compounds found in soil, groundwater, storm water and wastewater. © 2012 Elsevier B.V.

Occurrence of particle debris field during focused Ga ion beam milling of glassy carbon

To explore the machining characteristics of glassy carbon by focused ion beam (FIB), particles induced by FIB milling on glassy carbon have been studied in the current work. Nano-sized particles in the range of tens of nanometers up to 400 nm can often be found around the area subject to FIB milling. Two ion beam scanning modes - slow single scan and fast repetitive scan - have been tested. Fewer particles are found in single patterns milled in fast repetitive scan mode. For a group of test patterns milled in a sequence, it was found that a greater number of particles were deposited around sites machined early in the sequence. In situ EDX analysis of the particles showed that they were composed of C and Ga. The formation of particles is related to the debris generated at the surrounding areas, the low melting point of gallium used as FIB ion source and the high contact angle of gallium on glassy carbon induces de-wetting of Ga and the subsequent formation of Ga particles. Ultrasonic cleaning can remove over 98% of visible particles. The surface roughness (Ra) of FIB milled areas after cleaning is less than 2 nm. © 2010.

Ion beam, focused ion beam, and plasma discharge machining

Non-conventional methods of machining are used for many engineering applications where the traditional processes fail to be cost-effective. Such processes include Ion Beam Machining (IBM), focused ion beam (FIB) machining and plasma discharge machining. The mechanisms of material removal and associated hardware and software developed for industrial applications of these fascinating electro-physical and chemical machining processes are reviewed together with the latest research findings. © 2009 CIRP.

Electrical and optical properties of ion implanted SOI-based photonic crystals

We investigate the electrical properties of Silicon-on-Insulator photonic crystals as a function of doping level and air filling factor. A very interesting trade-off between conductivity and optical losses in L3 cavities is also found. © 2011 IEEE.

Impact of donor traps on the 2DEG and electrical behavior of AlGaN/GaN MISFETs

As an important step in understanding trap-related mechanisms in AlGaN/GaN transistors, the physical properties of surface states have been analyzed through the study of the transfer characteristics of a MISFET. This letter focused initially on the relationship between donor parameters (concentration and energy level) and electron density in the channel in AlGaN/GaN heterostructures. This analysis was then correlated to dc and pulsed measurements of the transfer characteristics of a MISFET, where the gate bias was found to modulate either the channel density or the donor states. Traps-free and traps-frozen TCAD simulations were performed on an equivalent device to capture the donor behavior. A donor concentration of 1.14× 1013 ∼ cm-2 with an energy level located 0.2 eV below the conduction band edge gave the best fit to measurements. With the approach described here, we were able to analyze the region of the MISFET that corresponds to the drift region of a conventional HEMT. © 1980-2012 IEEE.

An integrated 2-D model of a lithium ion battery: The effect of material parameters and morphology on storage particle stress

An integrated 2-D model of a lithium ion battery is developed to study the mechanical stress in storage particles as a function of material properties. A previously developed coupled stress-diffusion model for storage particles is implemented in 2-D and integrated into a complete battery system. The effect of morphology on the stress and lithium concentration is studied for the case of extraction of lithium in terms of previously developed non-dimensional parameters. These non-dimensional parameters include the material properties of the storage particles in the system, among other variables. We examine particles functioning in isolation as well as in closely-packed systems. Our results show that the particle distance from the separator, in combination with the material properties of the particle, is critical in predicting the stress generated within the particle. © 2012 Springer-Verlag.

Revealing lithium-silicide phase transformations in nano-structured silicon-based lithium ion batteries via in situ NMR spectroscopy.

Nano-structured silicon anodes are attractive alternatives to graphitic carbons in rechargeable Li-ion batteries, owing to their extremely high capacities. Despite their advantages, numerous issues remain to be addressed, the most basic being to understand the complex kinetics and thermodynamics that control the reactions and structural rearrangements. Elucidating this necessitates real-time in situ metrologies, which are highly challenging, if the whole electrode structure is studied at an atomistic level for multiple cycles under realistic cycling conditions. Here we report that Si nanowires grown on a conducting carbon-fibre support provide a robust model battery system that can be studied by (7)Li in situ NMR spectroscopy. The method allows the (de)alloying reactions of the amorphous silicides to be followed in the 2nd cycle and beyond. In combination with density-functional theory calculations, the results provide insight into the amorphous and amorphous-to-crystalline lithium-silicide transformations, particularly those at low voltages, which are highly relevant to practical cycling strategies.

On the variation of the 2DEG charge density with the density of the surface donor traps in AiGaN/GaN transistors

Gallium nitride (GaN) has a bright future in high voltage device owing to its remarkable physical properties and the possibility of growing heterostructures on silicon substrates. GaN High Electron Mobility Transistors (HEMTs) are expected to make a strong impact in off line applications and LED drives. However, unlike in silicon-based power devices, the on-state resistance of HEMT devices is hugely influenced by donor and acceptor traps at interfaces and in the bulk. This study focuses on the influence of donor traps located at the top interface between the semiconductor layer and the silicon nitride on the 2DEG density. It is shown through TCAD simulations and analytical study that the 2DEG charge density has an 'S' shape variation with two distinctive 'flat' regions, wherein it is not affected by the donor concentration, and one linear region. wherein the channel density increases proportionally with the donor concentration. We also show that the upper threshold value of the donor concentration within this 'S' shape increases significantly with the AIGaN thickness and the Al mole fraction and is highly affected by the presence of a thin GaN cap layer. © 2013 IEEE.