TIME RESOLVED REFLECTIVITY MEASUREMENTS APPLIED TO RAPID ISOTHERMAL ANNEALING OF ION IMPLANTED SILICON.

The annealing of ion implantation damage in silicon by rapid isothermal heating has been monitored by the time resolved reflectivity (TRR) method. This technique was applied simultaneously at a wavelength of 632. 8nm and also at 1152nm, where the optical absorption coefficient of silicon is less. The two wavelength method simplifies the interpretation of TRR results, extends the measurement depth and allows good resolution of the position of the interface between amorphous and crystalline silicon. The regrowth of amorphous layers in silicon, created by self implantation and implanted with electrically active impurities, was observed. Regrowth in rapid isothermal annealing occurs during the heating up stage of typical thermal cycles. Impurities such as B, P, and As increase the regrowth rate in a manner consistent with a vacancy model for regrowth. The maximum regrowth rate in boron implanted silicon is limited by the solid solubility.

Mode control in vertical-cavity surface-emitting lasers by post-processing using focused ion-beaih etching

Single-mode emission is achieved in previously multimode gain-guided vertical-cavity surface-emitting lasers (VCSEL's) by localized modification of the mirror reflectivity using focused ion-beam etching. Reflectivity engineering is also demonstrated to suppress transverse mode emission in an oxide-confined device, reducing the spectral width from 1.2 nm to less than 0.5 nm.

Mechanism of polarization pinning in vertical cavity surface emitting lasers using focused ion beam etching

Photoluminescence experiments have identified strain as the origin for polarization pinning in vertical cavity surface emitting lasers post-processed by focused ion beam etching. Theoretical models were applied to deduce the strain in devices. Post-annealing was used to optimize polarization pinning.

High power laser with integrated lens using focused ion beam etching

In this study, a collimating lens is introduced at the output facet of a tapered waveguide laser to compensate for the divergence of the optical mode. The collimating lens is shown to enhance the laser efficiency while simultaneously reducing the far field divergence.

A procedure for automatically estimating model parameters in optical motion capture

Model-based optical motion capture systems require knowledge of the position of the markers relative to the underlying skeleton, the lengths of the skeleton's limbs, and which limb each marker is attached to. These model parameters are typically assumed and entered into the system manually, although techniques exist for calculating some of them, such as the position of the markers relative to the skeleton's joints. We present a fully automatic procedure for determining these model parameters. It tracks the 2D positions of the markers on the cameras' image planes and determines which markers lie on each limb before calculating the position of the underlying skeleton. The only assumption is that the skeleton consists of rigid limbs connected with ball joints. The proposed system is demonstrated on a number of real data examples and is shown to calculate good estimates of the model parameters in each. © 2004 Elsevier B.V. All rights reserved.

Focused ion beam etching of GaN

We have investigated the use of focused ion beam (FIB) etching for the fabrication of GaN-based devices. Although work has shown that conventional reactive ion etching (RIE) is in most cases appropriate for the GaN device fabrication, the direct write facility of FIB etching - a well-established technique for optical mask repair and for IC failure analysis and repair - without the requirement for depositing an etch mask is invaluable. A gallium ion beam of about 20nm diameter was used to sputter GaN material. The etching rate depends linearly on the ion dose per area with a slope of 3.5×10 -4μm3/pC. At a current of 3nA, for example, this corresponds to an etch rate of 1.05μm3/s. Good etching qualities have been achieved with a side wall roughness significantly below 0.1μm. Changes in the roughness of the etched surface plane stay below 8nm.

Vertically aligned carbon nanotubes growth using self-assembled Ni nanoparticles produced by ion implantation

An alternative method for seeding catalyst nanoparticles for carbon nanotubes and nanowires growth is presented. Ni nanoparticles are formed inside a 450 nm SiO2 film on (100) Si wafers through the implantation of Ni ions at fluences of 7.5×1015 and 1.7×1016 ions.cm-2 and post-annealing treatments at 700, 900 and 1100°C. After exposed to the surface by HF dip etching, the Ni nanoparticles are used as catalyst for the growth of vertically aligned carbon nanotubes by direct current plasma enhanced chemical vapor deposition. © 2007 Materials Research Society.

A closely integrated digital image capture device for embedded applications

A modular image capture system with close integration to CCD cameras has been developed. The aim is to produce a system capable of integrating CCD sensor, image capture and image processing into a single compact unit. This close integration provides a direct mapping between CCD pixels and digital image pixels. The system has been interfaced to a digital signal processor board for the development and control of image processing tasks. These have included characterization and enhancement of noisy images from an intensified camera and measurement to subpixel resolutions. A highly compact form of the image capture system is in an advanced stage of development. This consists of a single FPGA device and a single VRAM providing a two chip image capturing system capable of being integrated into a CCD camera. A miniature compact PC has been developed using a novel modular interconnection technique, providing a processing unit in a three dimensional format highly suited to integration into a CCD camera unit. Work is under way to interface the compact capture system to the PC using this interconnection technique, combining CCD sensor, image capture and image processing into a single compact unit. ©2005 Copyright SPIE - The International Society for Optical Engineering.

An analysis of the cooperative mechano-sensitive feedback between intracellular signaling, focal adhesion development, and stress fiber contractility

Cells communicate with their external environment via focal adhesions and generate activation signals that in turn trigger the activity of the intracellular contractile machinery. These signals can be triggered by mechanical loading that gives rise to a cooperative feedback loop among signaling, focal adhesion formation, and cytoskeletal contractility, which in turn equilibrates with the applied mechanical loads. We devise a signaling model that couples stress fiber contractility and mechano-sensitive focal adhesion models to complete this above mentioned feedback loop. The signaling model is based on a biochemical pathway where IP3 molecules are generated when focal adhesions grow. These IP3 molecules diffuse through the cytosol leading to the opening of ion channels that disgorge Ca2+ from the endoplasmic reticulum leading to the activation of the actin/myosin contractile machinery. A simple numerical example is presented where a one-dimensional cell adhered to a rigid substrate is pulled at one end, and the evolution of the stress fiber activation signal, stress fiber concentrations, and focal adhesion distributions are investigated. We demonstrate that while it is sufficient to approximate the activation signal as spatially uniform due to the rapid diffusion of the IP3 through the cytosol, the level of the activation signal is sensitive to the rate of application of the mechanical loads. This suggests that ad hoc signaling models may not be able to capture the mechanical response of cells to a wide range of mechanical loading events. © 2011 American Society of Mechanical Engineers.