Trial by market: the Brightstar incubation experiment

Established firms accumulate a significant body of knowledge, expertise and capabilities that are often secondary to their central revenue generating activities. How do they leverage this expertise in non-core technology into future value creation opportunities? In this paper we examine an attempt by the telecommunications firm BT to create value from the accumulated knowledge within its laboratories by setting up an incubator. While conceived by the board as a mechanism for leveraging the value of non-core technology into the workplace, corporate support for the incubator was withdrawn after only three years and prompted the incubator to partner with a venture capital firm, NVP, in the spin-out of ventures. Through analysis of this single case we observe how entering into such a relationship reduces the transaction costs of accessing complementary resources, capabilities and competences, while simultaneously reducing a number of the risks associated with venturing for both parties. Partnering with the venture capitalist allows the established firm to get its intellectual property into the market, for it to be tested by the market and further developed. © 2010 Inderscience Enterprises Ltd.

Ultrafast sputtered ZnO thin films with high kT for acousticwave device applications

The fabrication of high frequency acoustic wave devices requires thedevelopment of thin films of piezoelectric materials with improved morphologicaland electro-acoustical properties. In particular, the crystalline orientationof the films, surface morphology, film stress and electrical resistivity are keyissues for the piezoelectric response. In the work reported here, ZnO thinfilms were deposited at high rates (>50 nm/min) using a novel process knownas the High Target Utilisation Sputtering (HiTUS). The films deposited possessexcellent crystallographic orientation, high resistivity (>109ωm), and exhibit surface roughness and film stress one order of magnitudelower than films grown with standard magnetron sputtering. The electromechanicalcoupling coefficient of the films, kT, was precisely calculated byimplementing the resonant spectrum method, and was found to be at least 6%higher than any previously reported kT of magnetron sputtered filmsto the Authors' knowledge. The low film stress of the film is deemed as one ofthe most important factors responsible for the high k T valueobtained. © 2010 IEEE.