Demonstration of submicron square-like silicon waveguide using optimized LOCOS process.

We demonstrate the design, fabrication and experimental characterization of a submicron-scale silicon waveguide that is fabricated by local oxidation of silicon. The use of local oxidation process allows defining the waveguide geometry and obtaining smooth sidewalls. The process can be tuned to precisely control the shape and the dimensions of the waveguide. The fabricated waveguides are measured using near field scanning optical microscope at 1550 nm wavelength. These measurements show mode width of 0.4 µm and effective refractive index of 2.54. Finally, we demonstrate the low loss characteristics of our waveguide by imaging the light scattering using an infrared camera.

Nanoscale mode selector in silicon waveguide for on chip nanofocusing applications.

We demonstrate a nanoscale mode selector supporting the propagation of the first antisymmetric mode of a silicon waveguide. The mode selector is based on embedding a short section of PhC into the waveguide. On the basis of the difference in k-vector distribution between orthogonal waveguide modes, the PhC can be designed to have a band gap for the fundamental mode, while allowing the transmission of the first antisymmetric mode. The device was tested by directly measuring the modal content before and after the PhC section using a near field scanning optical microscope. Extinction ratio was estimated to be approximately 23 dB. Finally, we provide numerical simulations demonstrating strong coupling of the antisymmetric mode to metallic nanotips. On the basis of the results, we believe that the mode selector may become an important building block in the realization of on chip nanofocusing devices.

Silicon-metal waveguide as a high efficiency Schottky detector for telecom wavelengths

We demonstrate an integrated on-chip compact and high efficiency Schottky detector for telecom wavelengths based on silicon metal waveguide. Detection is based on the internal photoemission process. Theory and experimental results are discussed. © 2012 OSA.

Experimental demonstration of locally oxidized hybrid silicon-plasmonic waveguide

We demonstrate self-aligned approach for fabrication of hybrid silicon plasmonic waveguide. The demonstrated structure provides both nanoscale confinement together with propagation length of 100 microns. Near-field measurements of propagation and coupling loss are also presented. © 2011 OSA.

Experimental demonstration of locally oxidized hybrid silicon-plasmonic waveguide

We experimentally demonstrate a self-aligned approach for the fabrication of nanoscale hybrid silicon-plasmonic waveguide fabricated by local oxidation of silicon (LOCOS). Implementation of the LOCOS technique provides compatibility with standard complementary metal-oxide-semiconductor technology and allows avoiding lateral misalignment between the silicon waveguide and the upper metallic layer. We directly measured the propagation and the coupling loss of the fabricated hybrid waveguide using a near-field scanning optical microscope. The demonstrated structure provides nanoscale confinement of light together with a reasonable propagation length of ∼100 μm. As such, it is expected to become an important building block in future on-chip optoelectronic circuitry. © 2010 American Institute of Physics.

Spatial mode selector in silicon waveguide

We demonstrate the design, fabrication and experimental characterization of the spatial mode selector that transmit only the second silicon waveguide mode. Nanofabrication results and near field measurements are presented. ©2009 Optical Society of America.

Demonstration of a self aligned hybrid silicon-plasmonic waveguide with low loss and nanoscale confinement

We demonstrate self-aligned approach for fabricating hybrid silicon plasmonic waveguide. The demonstrated structure provides nanoscale confinement together with propagation length of 100 microns on chip. Near-field measurements of propagation and coupling loss are presented. © 2011 Optical Society of America.

Silicon-metal waveguide as a high efficiency schottky detector for telecom wavelengths

We demonstrate an integrated on-chip compact and high efficiency Schottky detector for telecom wavelengths based on silicon metal waveguide. Detection is based on the internal photoemission process. Theory and experimental results are discussed. © 2012 Optical Society of America.

Demonstration of a self aligned hybrid silicon-plasmonic waveguide with low loss and nanoscale confinement

We demonstrate self-aligned approach for fabricating hybrid silicon plasmonic waveguide. The demonstrated structure provides nanoscale confinement together with propagation length of 100 microns on chip. Near-field measurements of propagation and coupling loss are presented. ©2011 Optical Society of America.

Low-cost PCB-integrated polymer waveguide sensor for gas detection

An optical waveguide sensor formed directly on low-cost PCB substrates is presented for the first time. The device integrates polymer waveguides functionalized with chemical dyes, photonic and electronic components and allows multiple-gas detection. © OSA/CLEO 2011.

Experimental demonstration of locally oxidized hybrid silicon-plasmonic waveguide

We demonstrate self-aligned approach for fabrication of hybrid silicon plasmonic waveguide. The demonstrated structure provides both nanoscale confinement together with propagation length of 100 microns. Near-field measurements of propagation and coupling loss are also presented. © 2011 Optical Society of America.

Experimental demonstration of locally oxidized hybrid silicon-plasmonic waveguide

We demonstrate self-aligned approach for fabrication of hybrid silicon plasmonic waveguide. The demonstrated structure provides both nanoscale confinement together with propagation length of 100 microns. Near-field measurements of propagation and coupling loss are also presented. ©2011 Optical Society of America.

Experimental demonstration of locally oxidized hybrid silicon-plasmonic waveguide

We demonstrate self-aligned approach for fabrication of hybrid silicon plasmonic waveguide. The demonstrated structure provides both nanoscale confinement together with propagation length of 100 microns. Near-field measurements of propagation and coupling loss are also presented. © 2011 Optical Society of America.

Spatial mode selector in silicon waveguide

We demonstrate the design, fabrication and experimental characterization of the spatial mode selector that transmit only the second silicon waveguide mode. Nanofabrication results and near field measurements are presented. © 2009 Optical Society of America.

Defect-assisted sub-bandgap avalanche photodetection in interleaved carrier-depletion silicon waveguide for telecom band

This paper demonstrates on chip sub bandgap detection of light at 1550 nm wavelength using the configuration of interleaved PN junctions along a silicon waveguide. The device operates under reverse bias in a nearly fully depleted mode, thus minimizing the free carrier plasma losses and significantly increases the detection volume at the same time. Furthermore, substantial enhancement in responsivity is observed by the transition from reverse bias to avalanche breakdown regime. The observed high responsivity of up to 7.2 mA/W at 3 V is attributed to defect assisted photogeneration, where the defects are related to the surface and the bulk of the waveguide. © 2014 AIP Publishing LLC.