Directly and parametrically excited bi-stable vibration energy harvester for broadband operation

Despite many recent advances, the wide-spread adoption of vibrational energy harvesting has been limited by the low levels of generated output power and confined operational frequency band. Recent work by the authors on parametrically excited harvesters has demonstrated over an order of magnitude power improvement. This paper presents an investigation into the simultaneous employment of both direct and parametric resonance, as well as the incorporation of bi-stability, in an attempt to further improve the mechanical-to-electrical energy conversion efficiency by broadening the output power spectrum. Multiple direct and parametric resonant peaks from a multi-degree-of-freedom system were observed and an accumulative ∼10 Hz half-power bandwidth was recorded for the first 40 Hz. Real vibration data was also employed to analysis the rms power response effectiveness of the proposed system. © 2013 IEEE.

Development of a multidirectional simple shear testing device

A new simple shear testing device capable of applying multidirectional loading to soil specimens has been developed. The Texas A&M University multidirectional simple shear (TAMU-MDSS) device provides the ability to apply a large range of shear stresses and complex loading paths, such as figure-eight and circular patterns, to a cylindrical soil specimen confined by a wire-reinforced membrane. The load and torque experienced by the sample are directly measured by a multi-axis load cell installed above the specimen. Backpressure saturation of the specimen is made possible by the devicés ability to apply pressure in the chamber and backpressure to the water lines. Excess pore pressure is measured by a pressure transducer during the shearing phase of the testing. This paper describes the development of the TAMU-MDSS system and the capabilities of the device and presents test results on saturated clay soil specimens subjected to monotonic, unidirectional cyclic, and multidirectional loading. Copyright © 2013 by ASTM International.

Digital data transmission using electro-optically modulated vertical-cavity surface-emitting laser with saturable absorber

An electro-optically (EO) modulated oxide-confined vertical-cavity surface-emitting laser (VCSEL) containing a saturable absorber in the VCSEL cavity is studied. The device contains an EO modulator section that is resonant with the VCSEL cavity. A type-II EO superlattice medium is employed in the modulator section and shown to result in a strong negative EO effect in weak electric fields. Applying the reverse bias voltages to the EO section allows triggering of short pulses in the device. Digital data transmission (return-to-zero pseudo-random bit sequence, 27-1) at 10Gb/s at bit-error-rates well below 10-9 is demonstrated. © 2014 AIP Publishing LLC.

The rocking response of large flexible structures to earthquakes

The rocking response of structures subjected to strong ground motions is a problem of 'several scales'. While small structures are sensitive to acceleration pulses acting successively, large structures are more significantly affected by coherent low frequency components of ground motion. As a result, the rocking response of large structures is more stable and orderly, allowing effective isolation from the ground without imminent danger of overturning. This paper aims to characterize and predict the maximum rocking response of large and flexible structures to earthquakes using an idealized structural model. To achieve this, the maximum rocking demand caused by different earthquake records was evaluated using several ground motion intensity measures. Pulse-type records which typically have high peak ground velocity and lower frequency content caused large rocking amplitudes, whereas non-pulse type records caused random rocking motion confined to small rocking amplitudes. Coherent velocity pulses were therefore identified as the primary cause of significant rocking motion. Using a suite of pulse-type ground motions, it was observed that idealized wavelets fitted to velocity pulses can adequately describe the rocking response of large structures. Further, a parametric analysis demonstrates that pulse shape parameters affect the maximum rocking response significantly. Based on these two findings, a probabilistic analysis method is proposed for estimating the maximum rocking demand to pulse-type earthquakes. The dimensionless demand maps, produced using these methods, have predictive power in the near-field provided that pulse period and amplitude can be estimated a priori. Use of this method within a probabilistic seismic demand analysis framework is briefly discussed. © 2013 Springer Science+Business Media Dordrecht.

Analysis on the off-state design and characterization of LIGBTs in partial SOI technology

Classical high voltage devices fabricated on SOI substrates suffer from a backside coupling effect which could result in premature breakdown. This phenomenon becomes more prominent if the structure is an IGBT which features a p-type injector. To suppress the premature breakdown due to crowding of electro-potential lines within a confined SOI/buried oxide structure, the partial SOI (PSOI) technique is being introduced. This paper analyzes the off-state behavior of an n-type Superjunction (SJ) LIGBT fabricated on PSOI substrate. During the initial development stage the SJ LIGBT was found to have very high leakage. This was attributed to the back and side coupling effects. This paper discusses these effects and shows how this problem could be successfully addressed with minimal modifications of device layout. The off-state performance of the SJ LIGBT at different temperatures is assessed and a comparison to an equivalent LDMOSFET is given. © 2014 Elsevier Ltd. All rights reserved.

Ni(Pt)-silicide contacts on CMOS devices: Impact of substrate nature and Pt concentration on the phase formation

Ni silicides used as contacts in source/drain and gate of advanced CMOS devices were analyzed by atom probe tomography (APT) at atomic scale. These measurements were performed on 45 nm nMOS after standard self-aligned silicide (salicide) process using Ni(5 at.% Pt) alloy. After the first annealing (RTA1), δ-Ni2Si was the only phase formed on gate and source/drain while, after the second annealing (RTA2), two different Ni silicides have been formed: NiSi on the gate and δ-Ni2Si on the source and drain. This difference between source/drain and gate regions in nMOS devices has been related to the Si substrate nature (poly or mono-crystalline) and to the size of the contact. In fact, NiSi seems to have difficulties to nucleate in the narrow source/drain contact on mono-crystalline Si. The results have been compared to analysis performed on 28 nm nMOS where the Pt concentration is higher (10 at.% Pt). In this case, θ-Ni2Si is the first phase to form after RTA1 and NiSi is then formed at the same time on source (or drain) and gate after RTA2. The absence of the formation of NiSi from δ-Ni 2Si/Si(1 0 0) interface compared to θ-Ni2Si/Si(1 0 0) interface could be related to the difference of the interface energies. The redistributions of As and Pt in different silicides and interfaces were measured and discussed. In particular, it has been evidenced that Pt redistributions obtained on both 45 and 28 nm MOS transistors correspond to respective Pt distributions measured on blanket wafers. © 2013 Elsevier B.V. All rights reserved.