An accelerated 3D Navier-Stokes solver for flows in turbomachines

A new three-dimensional Navier-Stokes solver for flows in turbomachines has been developed. The new solver is based on the latest version of the Denton codes, but has been implemented to run on Graphics Processing Units (GPUs) instead of the traditional Central Processing Unit (CPU). The change in processor enables an order-of-magnitude reduction in run-time due to the higher performance of the GPU. Scaling results for a 16 node GPU cluster are also presented, showing almost linear scaling for typical turbomachinery cases. For validation purposes, a test case consisting of a three-stage turbine with complete hub and casing leakage paths is described. Good agreement is obtained with previously published experimental results. The simulation runs in less than 10 minutes on a cluster with four GPUs. Copyright © 2009 by ASME.

Extraction of fibre network architecture by X-ray tomography and prediction of elastic properties using an affine analytical model

This paper proposes a method for extracting reliable architectural characteristics from complex porous structures using micro-computed tomography (μCT) images. The work focuses on a highly porous material composed of a network of fibres bonded together. The segmentation process, allowing separation of the fibres from the remainder of the image, is the most critical step in constructing an accurate representation of the network architecture. Segmentation methods, based on local and global thresholding, were investigated and evaluated by a quantitative comparison of the architectural parameters they yielded, such as the fibre orientation and segment length (sections between joints) distributions and the number of inter-fibre crossings. To improve segmentation accuracy, a deconvolution algorithm was proposed to restore the original images. The efficacy of the proposed method was verified by comparing μCT network architectural characteristics with those obtained using high resolution CT scans (nanoCT). The results indicate that this approach resolves the architecture of these complex networks and produces results approaching the quality of nanoCT scans. The extracted architectural parameters were used in conjunction with an affine analytical model to predict the axial and transverse stiffnesses of the fibre network. Transverse stiffness predictions were compared with experimentally measured values obtained by vibration testing. © 2011 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Parameter extraction and calorimetric validation for a silicon carbide jfet pspice model

This paper focuses on the PSpice model of SiC-JFET element inside a SiCED cascode device. The device model parameters are extracted from the I-V and C-V characterization curves. In order to validate the model, an inductive test rig circuit is designed and tested. The switching loss is estimated both using oscilloscope and calorimeter. These results are found to be in good agreement with the simulated results.

Accelerated ageing of a stabilised/solidified contaminated soil at elevated temperatures

Despite the widespread use of stabilisation/solidification (S/S) techniques, the validation and the availability of predictive modelling of the behaviour of stabilised/solidified soils in the longer-term is very limited. The authors were involved in the assessment of the behaviour of a contaminated site in the UK treated with cement-based in-situ S/S over the first five years after treatment. In parallel, two experimental methods, namely elevated temperatures and combined elevated temperatures and accelerated carbonation, were used in the laboratory to model accelerated ageing of the site soil. A graphical technique, based on the Arrhenius equation, was then used to model the laboratory observations and the in-situ five-year behaviour. The paper presents the details of the two experimental methods used for the accelerated ageing of stabilised/solidified model site soil, the numerical predictive model and a comparison between the results of the two experimental techniques and with the site results. © 2005 Taylor & Francis Group.

Accelerated and real-time creep and creep-rupture results for aramid fibers

This article presents results from conventional creep tests (CCT) and two accelerated test methods (the stepped isothermal method (SIM) and the stepped isostress method (SSM)) to determine the creep and creep-rupture behavior of two different aramid fibers, Kevlar 49 and Technora. CCT are regarded as the true behavior of the yarn, but they are impractical for long-term use where failures are expected only after many years. All the tests were carried out on the same batches of yarns, and using the same clamping arrangements, so the tests should be directly comparable. For both materials, SIM testing gives good agreement with CCT and gave stress-rupture lifetimes that followed the same trend. However, there was significant variation for SSM testing, especially when testing Technora fibers. The results indicate that Kevlar has a creep strain capacity that is almost independent of stress, whereas Technora shows a creep strain capacity that depends on stress. Its creep strain capacity is approximately two to three times that of Kevlar 49. The accelerated test methods give indirect estimates for the activation energy and the activation volume of the fibers. The activation energy for Technora is about 20% higher than that for Kevlar, meaning that it is less sensitive to the effects of increasing temperature. The activation volume for both materials was similar, and in both cases, stress dependent. Copyright © 2012 Wiley Periodicals, Inc.

Sparsity-Inducing Optimization Algorithm for the Extraction of Planar Structures in Noisy Point-Cloud Data

Most of the manual labor needed to create the geometric building information model (BIM) of an existing facility is spent converting raw point cloud data (PCD) to a BIM description. Automating this process would drastically reduce the modeling cost. Surface extraction from PCD is a fundamental step in this process. Compact modeling of redundant points in PCD as a set of planes leads to smaller file size and fast interactive visualization on cheap hardware. Traditional approaches for smooth surface reconstruction do not explicitly model the sparse scene structure or significantly exploit the redundancy. This paper proposes a method based on sparsity-inducing optimization to address the planar surface extraction problem. Through sparse optimization, points in PCD are segmented according to their embedded linear subspaces. Within each segmented part, plane models can be estimated. Experimental results on a typical noisy PCD demonstrate the effectiveness of the algorithm.

200-V lateral superjunction LIGBT on partial SOI

This letter presents a novel lateral superjunction lateral insulated-gate bipolar transistor (LIGBT) in partial silicon-on-insulator (SOI) technology in 0.18-μm partial-SOI (PSOI) high-voltage (HV) process. For an n-type superjunction LIGBT, the p-layer in the superjunction drift region not only helps in achieving uniform electric field distribution but also contributes to the on-state current. The superjunction LIGBT successfully achieves a breakdown voltage (BV) of 210 V with an R dson of 765 mΩ ̇ mm 2. It exhibits half the value of specific on-state resistance R dson and three times higher saturation current (I dsat) for the same BV, compared to a comparable lateral superjunction laterally diffused metal-oxide-semiconductor fabricated in the same technology. It also performs well in higher temperature dc operation with 38.8% increase in R dson at 175°C, compared to the room temperature without any degradation in latch-up performance. To realize this device, it only requires one additional mask layer into X-FAB 0.18-μm PSOI HV process. © 2012 IEEE.

200 v superjunction N-type lateral insulated-gate bipolar transistor with improved latch-up characteristics

This paper evaluates the technique used to improve the latching characteristics of the 200 V n-type superjunction (SJ) lateral insulated-gate bipolar transistor (LIGBT) on a partial silicon-on-insulator. SJ IGBT devices are more prone to latch-up than standard IGBTs due to the presence of a strong pnp transistor with the p layer serving as an effective collector of holes. The initial SJ LIGBT design latches at about 23 V with a gate voltage of 5 V with a forward voltage drop (VON) of 2 V at 300 Acm2. The latch-up current density is 1100 Acm2. The latest SJ LIGBT design shows an increase in latch-up voltage close to 100 V without a significant penalty in VON. The latest design shows a latch-up current density of 1195 A cm2. The enhanced robustness against static latch-up leads to a better forward bias safe operating area. © 1963-2012 IEEE.

Analytical field-effect method for extraction of subgap states in thin-film transistors

We present an analytical field-effect method to extract the density of subgap states (subgap DOS) in amorphous semiconductor thin-film transistors (TFTs), using a closed-form relationship between surface potential and gate voltage. By accounting the interface states in the subthreshold characteristics, the subgap DOS is retrieved, leading to a reasonably accurate description of field-effect mobility and its gate voltage dependence. The method proposed here is very useful not only in extracting device performance but also in physically based compact TFT modeling for circuit simulation. © 2012 IEEE.