Spatial emission control of vertical cavity surface emitting lasers to provide bandwidth gain in multimode fibre links using a simple alignment technique

Etched VCSEL sources are reported which avoid bandwidth collapse in multimode fibre using a simple coupling technique to control the launch. These devices have allowed better than over-filled launch bandwidth for alignment tolerances of ±7 microns.

Gaussian etched single transverse mode vertical-cavity surface-emitting laser

A continuous Gaussian profile matched to the fundamental mode was etched onto the aperture of a vertical cavity surface emitting laser (VCSEL). Single Gaussian spot emission was achieved over the entire operating current range.

High speed reconfiguration of dual-purpose vertical cavity surface emitting laser/detector

High-speed configuration results of a conventional 850 nm VCSEL that is modified to operate as an efficient avalanche detector as well as a laser are discussed. The measured laser-to-detector reconfiguration delay of 3.2 ns is longer than the 1.2 ns detector-to-detector reconfiguration delay.

All-optical switching in a vertical coupler space switch employing photocarrier-induced nonlinearity

A novel compact integrated nonlinear optical switch is demonstrated. Using a high-power picosecond pulse of 5-ps pulsewidth and 250-MHz repetition rate, all-optical switching with a contrast ratio of 23 dB has been achieved using an in-fiber input power < 14 dBm (100 pJ/pulse). The switch speed depends on the carrier sweep-out time, which can be reduced to the 10 ps range by either applying a reverse bias or by introduction of carrier recombination centers in the active layer.

Optimizing the energy output of vertical axis wind turbines for fluctuating wind conditions

The control of a wind turbine to the mean wind speed in a gusty wind results in very poor performance. Fluctuations in wind speed with time constants shorter than the response time of a wind turbine results in operation away from optimum design conditions. The effectiveness of a turbine operating in a gusty wind is shown though the use of an unsteady performance coefficient, C e. This performance coefficient is similar in form to a power coefficient. However in order to accommodate unsteady effects, Ce is defined as a ratio of energy extracted to the total wind energy available over a set time period. The turbine's response to real wind data is modelled, in the first instance, by assuming a constant rotational speed operation. It is shown that a significant increase in energy production can be realized by demanding a Tip Speed Ratio above the steady state optimum. The constant speed model is then further extended to incorporate inertial and controller effects. Parameters dictating how well a turbine can track a demand in Tip Speed Ratio have been identified and combined, to form a non-dimensional turbine response parameter. This parameter characterizes a turbine's ability to track a demand in Tip Speed Ratio dependent on an effective gust frequency. A significant increase in energy output of 42% and 245% is illustrated through the application of this over-speed control. This is for the constant rotational speed and Tip Speed Ratio feedback models respectively. The affect of airfoil choice on energy extraction within a gusty wind has been considered. The adaptive control logic developed enables the application of airfoils demonstrating high maximum L/D values but sharp stalling characteristics to be successfully used in a VAWT design.

20 Gb/s QPSK transmission using an electro-optically modulated vertical-cavity surface-emitting laser

20 Gb/s QPSK transmission over 100 m of OM3 fibre using an EOM VCSEL under QPSK modulation is reported. Bit-error-ratio measurements are carried out to express the quality of the transmission scheme. © 2011 OSA.

Effect of gate dielectric scaling in nanometer scale vertical thin film transistors

A short channel vertical thin film transistor (VTFT) with 30 nm SiN x gate dielectric is reported for low voltage, high-resolution active matrix applications. The device demonstrates an ON/OFF current ratio as high as 10 9, leakage current in the fA range, and a sub-threshold slope steeper than 0.23 V/dec exhibiting a marked improvement with scaling of the gate dielectric thickness. © 2011 American Institute of Physics.

Optimized vertical carbon nanotube forests for multiplex surface-enhanced raman scattering detection

The highly sensitive and molecule-specific technique of surface-enhanced Raman spectroscopy (SERS) generates high signal enhancements via localized optical fields on nanoscale metallic materials, which can be tuned by manipulation of the surface roughness and architecture on the submicrometer level. We investigate gold-functionalized vertically aligned carbon nanotube forests (VACNTs) as low-cost straightforward SERS nanoplatforms. We find that their SERS enhancements depend on their diameter and density, which are systematically optimized for their performance. Modeling of the VACNT-based SERS substrates confirms consistent dependence on structural parameters as observed experimentally. The created nanostructures span over large substrate areas, are readily configurable, and yield uniform and reproducible SERS enhancement factors. Further fabricated micropatterned VACNTs platforms are shown to deliver multiplexed SERS detection. The unique properties of CNTs, which can be synergistically utilized in VACNT-based substrates and patterned arrays, can thus provide new generation platforms for SERS detection. © 2012 American Chemical Society.

Characterization of vertical Mo/diamond Schottky barrier diode from non-ideal I-V and C-V measurements based on MIS model

In this study, we investigated non-ideal characteristics of a diamond Schottky barrier diode with Molybdenum (Mo) Schottky metal fabricated by Microwave Plasma Chemical Vapour Deposition (MPCVD) technique. Extraction from forward bias I-V and reverse bias C- 2-V measurements yields ideality factor of 1.3, Schottky barrier height of 1.872 eV, and on-resistance of 32.63 mö·cm2. The deviation of extracted Schottky barrier height from an ideal value of 2.24 eV (considering Mo workfunction of 4.53 eV) indicates Fermi level pinning at the interface. We attributed such non-ideal behavior to the existence of thin interfacial layer and interface states between metal and diamond which forms Metal-Interfacial layer-Semiconductor (MIS) structure. Oxygen surface treatment during fabrication process might have induced them. From forward bias C-V characteristics, the minimum thickness of the interfacial layer is approximately 0.248 nm. Energy distribution profile of the interface state density is then evaluated from the forward bias I-V characteristics based on the MIS model. The interface state density is found to be uniformly distributed with values around 1013 eV - 1·cm- 2. © 2013 Elsevier B.V.

Structural and optical characterization of vertical GaAs/GaP core-shell nanowires grown on Si substrates

GaAs nanowires were grown on Si (111) substrates. By coating a thin GaAs buffer layer on Si surface and using a two-temperature growth, the morphology and crystal structure of GaAs nanowires were dramatically improved. The strained GaAs/GaP core-shell nanowires, based on the improved GaAs nanowires with a shell thickness of 25 nm, showed a significant shift in emission energy of 260 meV from the unstrained GaAs nanowires. © 2010 IEEE.