Effect of buried depth and diameter on uplift of underground structures in liquefied soils

In an earthquake, underground structures located in liquefiable soil deposits are susceptible to floatation following an earthquake event due to their lower unit weight relative to the surrounding saturated soil. The uplift displacement of an underground structure in liquefiable soil deposit can be affected by the buried depth and size of the structure. Dynamic centrifuge tests have been carried out to investigate the influence of these factors by measuring the uplift displacement of shallow model circular structures. Ratios for the buried depth and diameter effects of the structure are introduced to compare the uplift displacement in different soil and earthquake conditions. With the depth effect and diameter effect ratios, the uplift displacement of a buoyant structure in liquefiable soil can also be estimated based on performance of similar structures in comparable soil condition and subjected to a similar earthquake event. © 2012 Elsevier Ltd.

Micro-measurement and monitoring system for ageing underground infrastructure (Underground M3)

Advances in the development of computer vision, miniature Micro-Electro-Mechanical Systems (MEMS) and Wireless Sensor Network (WSN) offer intriguing possibilities that can radically alter the paradigms underlying existing methods of condition assessment and monitoring of ageing civil engineering infrastructure. This paper describes some of the outcomes of the European Science Foundation project "Micro-Measurement and Monitoring System for Ageing Underground Infrastructures (Underground M3)". The main aim of the project was to develop a system that uses a tiered approach to monitor the degree and rate of tunnel deterioration. The system comprises of (1) Tier 1: Micro-detection using advances in computer vision and (2) Tier 2: Micro-monitoring and communication using advances in MEMS and WSN. These potentially low-cost technologies will be able to reduce costs associated with end-of-life structures, which is essential to the viability of rehabilitation, repair and reuse. The paper describes the actual deployment and testing of these innovative monitoring tools in tunnels of London Underground, Prague Metro and Barcelona Metro. © 2012 Taylor & Francis Group.

A comparison of two models for the vibration response of piled foundations to inertial and underground-railway-induced loadings

The vibration response of piled foundations due to ground-borne vibration produced by an underground railway is a largely-neglected area in the field of structural dynamics. However, this continues to be an important aspect of research as it is expected that the presence of piled foundations can have a significant influence on the propagation and transmission of the wavefield produced by the underground railway. This paper presents a comparison of two methods that can be employed in calculating the vibration response of a piled foundation: an efficient semi-analytical model, and a Boundary Element model. The semi-analytical model uses a column or an Euler beam to model the pile, and the soil is modelled as a linear, elastic continuum that has the geometry of a thick-walled cylinder with an infinite outer radius and an inner radius equal to the radius of the pile. The boundary element model uses a constant-element BEM formulation for the halfspace, and a rectangular discretisation of the circular pile-soil interface. The piles are modelled as Timoshenko beams. Pile-soil-pile interactions are inherently accounted for in the BEM equations, whereas in the semi-analytical model these are quantified using the superposition of interaction factors. Both models use the method of joining subsystems to incorporate the incident wavefield generated by the underground railway into the pile model. Results are computed for a single pile subject to an inertial loading, pile-soil-pile interactions, and a pile group subjected to excitation from an underground railway. The two models are compared in terms of accuracy, computation time, versatility and applicability, and guidelines for future vibration prediction models involving piled foundations are proposed.

Inhomogeneous soils and their effect on ground vibration due to underground railways

Ground vibration due to underground railways is a significant source of disturbance for people living or working near subways. Numerical models are commonly used to predict vibration levels; however, uncertainty inherent to these simulations must be understood to give confidence in the predictions. A semi-analytical approach is developed herein to investigate the effect of uncertainty in soil material properties on the surface vibration of layered halfspaces excited by an underground railway. The half-space is simulated using the thin-layer method coupled with the pipe-in-pipe (PiP) method for determining the load on the buried tunnel. The K-L expansion method is employed to smoothly vary the material properties throughout the soil by up to 10%. The simulation predicts a surface rms velocity variation of 5-10dB compared to a homogeneous, layered halfspace. These results suggest it may be prudent to include a 5dB error band on predicted vibration levels when simulating areas of varied material properties.

Effect of soil conditions on uplift of underground structures in liquefied soil

In an earthquake, underground structures located in liquefiable soil deposits are susceptible to floatation following an earthquake event due to their lower unit weight relative to the surrounding saturated soil. Such uplift response of the buoyant structure is influenced by the soil it is buried in. In the case of a liquefiable soil deposit, the soil can lose its shear strength significantly in the event of an earthquake. If the soil liquefies fully, the buoyant structure can float towards the soil surface. However, a partly liquefied soil deposit retains some of its initial shear strength and resists the uplift. This paper discusses the different soil conditions and their influence on the uplift response of buoyant structures. © 2012 World Scientific Publishing Company.

Excess pore pressures around underground structures following earthquake induced liquefaction

Underground structures located in liquefiable soil deposits are susceptible to floatation following an earthquake event due to their lower unit weight relative to the surrounding saturated soil. This inherent buoyancy may cause lightweight structures to float when the soil liquefies. Centrifuge tests have been carried out to study the excess pore pressure generation and dissipation in liquefiable soils. In these tests, near full liquefaction conditions were attained within a few cycles of the earthquake loading. In the case of high hydraulic conductivity sands, significant dissipation could take place even during the earthquake loading which inhibits full liquefaction from occurring. In the case of excess pore pressure generation and dissipation around a floating structure, the cyclic response of the structure may lead to the reduction in excess pore pressure near the face of the structure as compared to the far field. This reduction in excess pore pressure is due to shear-induced dilation and suction pressures arising from extensile stresses at the soil-structure interface. Given the lower excess pore pressure around the structure; the soil around the structure retains a portion of this shear strength which in turn can discourage significant uplift of the underground structure. Copyright © 2012, IGI Global.

Remediation against floatation of underground structures

Underground structures located in liquefiable soil deposits are susceptible to floatation following an earthquake event due to their lower unit weight relative to the surrounding saturated soil. Centrifuge tests have been carried out to assess the effectiveness of existing remediation techniques in reducing the uplift of underground structures, namely in situ densification and the use of coarse sand backfill. The centrifuge test results showed that these methods do reduce the uplift displacement of buoyant structures. Their performance was thereafter linked to the theoretical mechanism of floatation of underground structures. Based on the understanding from preceding tests, a further improvement on the use of the coarse sand backfill was carried out, which produced a greater reduction in the uplift displacement of the structure. Each of these techniques, however, does pose issues when applied in the field, such as possible damage to surrounding structures, construction issues and maintenance problems.

Impact of donor traps on the 2DEG and electrical behavior of AlGaN/GaN MISFETs

As an important step in understanding trap-related mechanisms in AlGaN/GaN transistors, the physical properties of surface states have been analyzed through the study of the transfer characteristics of a MISFET. This letter focused initially on the relationship between donor parameters (concentration and energy level) and electron density in the channel in AlGaN/GaN heterostructures. This analysis was then correlated to dc and pulsed measurements of the transfer characteristics of a MISFET, where the gate bias was found to modulate either the channel density or the donor states. Traps-free and traps-frozen TCAD simulations were performed on an equivalent device to capture the donor behavior. A donor concentration of 1.14× 1013 ∼ cm-2 with an energy level located 0.2 eV below the conduction band edge gave the best fit to measurements. With the approach described here, we were able to analyze the region of the MISFET that corresponds to the drift region of a conventional HEMT. © 1980-2012 IEEE.

On the variation of the 2DEG charge density with the density of the surface donor traps in AiGaN/GaN transistors

Gallium nitride (GaN) has a bright future in high voltage device owing to its remarkable physical properties and the possibility of growing heterostructures on silicon substrates. GaN High Electron Mobility Transistors (HEMTs) are expected to make a strong impact in off line applications and LED drives. However, unlike in silicon-based power devices, the on-state resistance of HEMT devices is hugely influenced by donor and acceptor traps at interfaces and in the bulk. This study focuses on the influence of donor traps located at the top interface between the semiconductor layer and the silicon nitride on the 2DEG density. It is shown through TCAD simulations and analytical study that the 2DEG charge density has an 'S' shape variation with two distinctive 'flat' regions, wherein it is not affected by the donor concentration, and one linear region. wherein the channel density increases proportionally with the donor concentration. We also show that the upper threshold value of the donor concentration within this 'S' shape increases significantly with the AIGaN thickness and the Al mole fraction and is highly affected by the presence of a thin GaN cap layer. © 2013 IEEE.