TECHNIQUES FOR PRODUCING DEFECT-FREE SOI BY DUAL ELECTRON BEAM HEATING OF DEPOSITED POLYSILICON.

Advances in the dual electron-beam recrystallization technique arising from the fast scanning of a line beam parallel to the edges of narrow seeding windows are described. The resultant recrystallized layers are essentially defect-free, have good surface flatness, and cover large areas.

Defect and disorder reduction by annealing in hydrogenated tetrahedral amorphous carbon

Hydrogenated tetrahedral amorphous carbon (ta-C:H) is a form of diamond-like carbon with a high sp3 content (>60%), grown here using a plasma beam source. Information on the behaviour of hydrogen upon annealing is obtained from effusion measurements, which show that hydrogen does not effuse significantly at temperatures less than 500 °C in films grown using methane and 700 °C in films grown using acetylene. Raman measurements show no significant structural changes at temperatures up to 300 °C. At higher temperatures, corresponding to the onset of effusion, the Raman spectra show a clustering of the sp2 phase. The density of states of ta-C:H is directly measured using scanning tunnelling spectroscopy. The measured gradients of the conduction and valence band tails increase up to 300 °C, confirming the occurrence of band tail sharpening. Examination of the photoluminescence background in the Raman spectra shows an increase in photoluminescence intensity with decreasing defect density, providing evidence that paramagnetic defects are the dominant non-radiative recombination centres in ta-C:H.

Characterization of defect removal in hydrogenated and deuterated amorphous silicon thin film transistors

Thin film transistors (TFTs) utilizing an hydrogenated amorphous silicon (a-Si:H) channel layer exhibit a shift in the threshold voltage with time under the application of a gate bias voltage due to the creation of metastable defects. These defects are removed by annealing the device with zero gate bias applied. The defect removal process can be characterized by a thermalization energy which is, in turn, dependent upon an attempt-to-escape frequency for defect removal. The threshold voltage of both hydrogenated and deuterated amorphous silicon (a-Si:D) TFTs has been measured as a function of annealing time and temperature. Using a molecular dynamics simulation of hydrogen and deuterium in a silicon network in the H2 * configuration, it is shown that the experimental results are consistent with an attempt-to-escape frequency of (4.4 ± 0.3) × 1013 Hz and (5.7 ± 0.3) × 1013 Hz for a-Si:H and a-Si:D respectively which is attributed to the oscillation of the Si-H and Si-D bonds. Using this approach, it becomes possible to describe defect removal in hydrogenated and deuterated material by the thermalization energies of (1.552 ± 0.003) eV and (1.559 ± 0.003) eV respectively. This correlates with the energy per atom of the Si-H and Si-D bonds. © 2006 Elsevier B.V. All rights reserved.

The effect of a twin tunnel on the propagation of ground-borne vibration from an underground railway

Accurate predictions of ground-borne vibration levels in the vicinity of an underground railway are greatly sought after in modern urban centres. Yet the complexity involved in simulating the underground environment means that it is necessary to make simplifying assumptions about this system. One such commonly made assumption is to ignore the effects of neighbouring tunnels, despite the fact that many underground railway lines consist of twin-bored tunnels, one for the outbound direction and one for the inbound direction. This paper presents a unique model for two tunnels embedded in a homogeneous, elastic fullspace. Each of these tunnels is subject to both known, dynamic train forces and dynamic cavity forces. The net forces acting on the tunnels are written as the sum of those tractions acting on the invert of a single tunnel, and those tractions that represent the motion induced by the neighbouring tunnel. By apportioning the tractions in this way, the vibration response of a two-tunnel system is written as a linear combination of displacement fields produced by a single-tunnel system. Using Fourier decomposition, forces are partitioned into symmetric and antisymmetric modenumber components to minimise computation times. The significance of the interactions between two tunnels is quantified by calculating the insertion gains, in both the vertical and horizontal directions, that result from the existence of a second tunnel. The insertion-gain results are shown to be localised and highly dependent on frequency, tunnel orientation and tunnel thickness. At some locations, the magnitude of these insertion gains is greater than 20 dB. This demonstrates that a high degree of inaccuracy exists in any surface vibration prediction model that includes only one of the two tunnels. This novel two-tunnel solution represents a significant contribution to the existing body of research into vibration from underground railways, as it shows that the second tunnel has a significant influence on the accuracy of vibration predictions for underground railways. © 2011 Elsevier Ltd. All rights reserved.

Run-up of solitary waves on twin conical islands using a boussinesq model

This paper investigates the interaction of solitary waves (representative of tsunamis) with idealized flat-topped conical islands. The investigation is based on simulations produced by a numerical model that solves the two-dimensional Boussinesq-type equations of Madsen and Sørensen using a total variation diminishing Lax-Wendroff scheme. After verification against published laboratory data on solitary wave run-up at a single island, the numerical model is applied to study the maximum run-up at a pair of identical conical islands located at different spacings apart for various angles of wave attack. The predicted results indicate that the maximum run-up can be attenuated or enhanced according to the position of the second island because of wave refraction, diffraction, and reflection. It is also observed that the local wave height and hence run-up can be amplified at certain gap spacing between the islands, owing to the interference between the incident waves and the reflected waves between islands. © 2012 American Society of Mechanical Engineers.

Analysis of defect-related localized emission processes in InGaN/GaN-based LEDs

This paper reports an extensive analysis of the defect-related localized emission processes occurring in InGaN/GaN-based light-emitting diodes (LEDs) at low reverse- and forward-bias conditions. The analysis is based on combined electrical characterization and spectrally and spatially resolved electroluminescence (EL) measurements. Results of this analysis show that: (i) under reverse bias, LEDs can emit a weak luminescence signal, which is directly proportional to the injected reverse current. Reverse-bias emission is localized in submicrometer-size spots; the intensity of the signal is strongly correlated to the threading dislocation (TD) density, since TDs are preferential paths for leakage current conduction. (ii) Under low forward-bias conditions, the intensity of the EL signal is not uniform over the device area. Spectrally resolved EL analysis of green LEDs identifies the presence of localized spots emitting at 600 nm (i.e., in the yellow spectral region), whose origin is ascribed to localized tunneling occurring between the quantum wells and the barrier layers of the diodes, with subsequent defect-assisted radiative recombination. The role of defects in determining yellow luminescence is confirmed by the high activation energy of the thermal quenching of yellow emission (Ea =0.64&eV). © 2012 IEEE.

Adaptive enhancement of multimode fibre bandwidth by twin-spot offset launch

A binary grating on a Spatial Light Modulator generates twin antiphase spots with adjustable positions across the core of a multimode fibre allowing adaptive excitation of antisymmetric mode-groups for improving modal dispersion or modal multiplexing. © 2011 IEEE.