Ferroelectric-carbon nanotube memory devices

One-dimensional ferroelectric nanostructures, carbon nanotubes (CNT) and CNTinorganic oxides have recently been studied due to their potential applications for microelectronics. Here, we report coating of a registered array of aligned multi-wall carbon nanotubes (MWCNT) grown on silicon substrates by functional ferroelectric Pb(Zr,Ti)O 3 (PZT) which produces structures suitable for commercial prototype memories. Microstructural analysis reveals the crystalline nature of PZT with small nanocrystals aligned in different directions. First-order Raman modes of MWCNT and PZT/MWCNT/n-Si show the high structural quality of CNT before and after PZT deposition at elevated temperature. PZT exists mostly in the monoclinic Cc/Cm phase, which is the origin of the high piezoelectric response in the system. Lowloss square piezoelectric hysteresis obtained for the 3D bottom-up structure confirms the switchability of the device. Currentvoltage mapping of the device by conducting atomic force microscopy (c-AFM) indicates very low transient current. Fabrication and functional properties of these hybrid ferroelectriccarbon nanotubes is the first step towards miniaturization for future nanotechnology sensors, actuators, transducers and memory devices. © 2012 IOP Publishing Ltd.

Dry-transfer of aligned multiwalled carbon nanotubes for flexible transparent thin films

Herein we present an inexpensive facile wet-chemistry-free approach to the transfer of chemical vapour-deposited multiwalled carbon nanotubes to flexible transparent polymer substrates in a single-step process. By controlling the nanotube length, we demonstrate accurate control over the electrical conductivity and optical transparency of the transferred thin films. Uniaxial strains of up to 140% induced only minor reductions in sample conductivity, opening up a number of applications in stretchable electronics. Nanotube alignment offers enhanced functionality for applications such as polarisation selective electrodes and flexible supercapacitor substrates. A capacitance of 17F/g was determined for supercapacitors fabricated from the reported dry-transferred MWCNTs with the corresponding cyclic voltagrams showing a clear dependence on nanotube length. © 2012 Matthew Cole et al.

Dual gate photo-thin film transistor with high photoconductive gain for high reliability, and low noise flat panel transparent imager

In this presentation, we report excellent electrical and optical characteristics of a dual gate photo thin film transistor (TFT) with bi-layer oxide channel, which was designed to provide virgin threshold voltage (V T) control, improve the negative bias illumination temperature stress (NBITS) reliability, and offer high photoconductive gain. In order to address the photo-sensitivity of phototransistor for the incoming light, top transparent InZnO (IZO) gate was employed, which enables the independent gate control of dual gate photo-TFT without having any degradation of its photosensitivity. Considering optimum initial V T and NBITS reliability for the device operation, the top gate bias was judiciously chosen. In addition, the speed and noise performance of the photo-TFT is competitive with silicon photo-transistors, and more importantly, its superiority lies in optical transparency. © 2011 IEEE.

Noncatalytic chemical vapor deposition of graphene on high-temperature substrates for transparent electrodes

A noncatalytic chemical vapor deposition mechanism is proposed, where high precursor concentration, long deposition time, high temperature, and flat substrate are needed to grow large-area nanocrystalline graphene using hydrocarbon pyrolysis. The graphene is scalable, uniform, and with controlled thickness. It can be deposited on virtually any nonmetallic substrate that withstands ∼1000 °C. For typical examples, graphene grown directly on quartz and sapphire shows transmittance and conductivity similar to exfoliated or metal-catalyzed graphene, as evidenced by transmission spectroscopy and transport measurements. Raman spectroscopy confirms the sp 2-C structure. The model and results demonstrate a promising transfer-free technique for transparent electrode production. © 2012 American Institute of Physics.

Electrotactile touch surface by using transparent graphene

In this work we present a flexible Electrostatic Tactile (ET) surface/display realized by using new emerging material graphene. The graphene is transparent conductor which successfully replaces previous solution based on indium-thin oxide (ITO) and delivers more reliable solution for flexible and bendable displays. The electrostatic tactile surface is capable of delivering programmable, location specific tactile textures. The ET device has an area of 25 cm 2, and consists of 130 μm thin optically transparent (>76%) and mechanically flexible structure overlaid unobtrusively on top of a display. The ET system exploits electro vibration phenomena to enable on-demand control of the frictional force between the user's fingertip and the device surface. The ET device is integrated through a controller on a mobile display platform to generate fully programmable range of stimulating signals. The ET haptic feedback is formed in accordance with the visual information displayed underneath, with the magnitude and pattern of the frictional force correlated with both the images and the coordinates of the actual touch in real time forming virtual textures on the display surface (haptic virtual silhouette). To quantify rate of change in friction force we performed a dynamic friction coefficient measurement with a system involving an artificial finger mimicking the actual touch. During operation, the dynamic friction between the ET surface and an artificial finger stimulation increases by 26% when the load is 0.8 N and by 24% when the load is 1 N. © 2012 ACM.