Modelling and predictive control: Enabling technologies for reconfiguration

An approach to reconfiguring control systems in the event of major failures is advocated. The approach relies on the convergence of several technologies which are currently emerging: Constrained predictive control, High-fidelity modelling of complex systems, Fault detection and identification, and Model approximation and simplification. Much work is needed, both theoretical and algorithmic, to make this approach practical, but we believe that there is enough evidence, especially from existing industrial practice, for the scheme to be considered realistic. After outlining the problem and proposed solution, the paper briefly reviews constrained predictive control and object-oriented modelling, which are the essential ingredients for practical implementation. The prospects for automatic model simplification are also reviewed briefly. The paper emphasizes some emerging trends in industrial practice, especially as regards modelling and control of complex systems. Examples from process control and flight control are used to illustrate some of the ideas.

Towards a process framework for assessing the potential value of technologies

Current technology valuation literature predominantly focuses on explaining the merits and implications of specific tools, but little research is available that takes a contextual process perspective. The aim of this paper is to further develop an integrative process framework that supports the structuring of the valuation process and the more systematic choice of valuation techniques for new technologies. The paper starts by reviewing key concepts and issues that surround the assessment of technology investments and the evidence of what companies use. Many factors need to be brought into the appraisal process, reflecting technological and market conditions. While there is usually a desire to reduce the assessment to a financial value, it is also widely appreciated that there is long term strategic value in securing a technological lead, which is difficult, or even inappropriate, to assess in purely financial terms. The multiple factors involved in the evaluation activity are identified with respect to the changing nature of the appraisal process as the technology matures and the implications for associated tools. The result of the literature review is a process framework which provides a conceptual basis for integrating valuation techniques. This framework is then populated with the results of industrial case studies on technology valuation to allow conclusions on its applicability to be drawn. © 2011 IEEE.

Why do firms acquire external technologies? Understanding the motivations for technology acquisitions

Why do firms acquire external technologies? Previous research indicates that there are a wide variety of motivations. These include the need to acquire valuable knowledge-based resources, to improve strategic flexibility, to experiment), to overcome organisational inertia, to mitigate risk and uncertainty, to reduce costs and development time in new product development, and the perception that the firm has the absorptive capacity to integrate acquisitions. In this paper we provide an in-depth literature review of the motivations for the acquisition of external technologies by firms. We find that these motivations can be broadly classed into four categories: (1) the development of technological capabilities, (2) the development of strategic options, (3) efficiency improvements, and (4) responses to the competitive environment. In light of this categorisation, we comment on how these different motivations connect to the wider issues of technology acquisition. © 2010 IEEE.

Research progress on hybrid PV/thermal solar system

The basic types of hybrid PV/thermal solar system and their performance were analyzed comparatively. The research method and recent developments of PV/T system were described. This paper gave some examples of PV/T products and demonstration project. Finally, some main problems, which should be solved in R&D of PV/T system, were presented and the outlook of PV/T technology was briefly discussed.

Low temperature (< 100 °c) deposited P-type cuprous oxide thin films: Importance of controlled oxygen and deposition energy

With the emergence of transparent electronics, there has been considerable advancement in n-type transparent semiconducting oxide (TSO) materials, such as ZnO, InGaZnO, and InSnO. Comparatively, the availability of p-type TSO materials is more scarce and the available materials are less mature. The development of p-type semiconductors is one of the key technologies needed to push transparent electronics and systems to the next frontier, particularly for implementing p-n junctions for solar cells and p-type transistors for complementary logic/circuits applications. Cuprous oxide (Cu2O) is one of the most promising candidates for p-type TSO materials. This paper reports the deposition of Cu2O thin films without substrate heating using a high deposition rate reactive sputtering technique, called high target utilisation sputtering (HiTUS). This technique allows independent control of the remote plasma density and the ion energy, thus providing finer control of the film properties and microstructure as well as reducing film stress. The effect of deposition parameters, including oxygen flow rate, plasma power and target power, on the properties of Cu2O films are reported. It is known from previously published work that the formation of pure Cu2O film is often difficult, due to the more ready formation or co-formation of cupric oxide (CuO). From our investigation, we established two key concurrent criteria needed for attaining Cu2O thin films (as opposed to CuO or mixed phase CuO/Cu2O films). First, the oxygen flow rate must be kept low to avoid over-oxidation of Cu2O to CuO and to ensure a non-oxidised/non-poisoned metallic copper target in the reactive sputtering environment. Secondly, the energy of the sputtered copper species must be kept low as higher reaction energy tends to favour the formation of CuO. The unique design of the HiTUS system enables the provision of a high density of low energy sputtered copper radicals/ions, and when combined with a controlled amount of oxygen, can produce good quality p-type transparent Cu2O films with electrical resistivity ranging from 102 to 104 Ω-cm, hole mobility of 1-10 cm2/V-s, and optical band-gap of 2.0-2.6 eV. These material properties make this low temperature deposited HiTUS Cu 2O film suitable for fabrication of p-type metal oxide thin film transistors. Furthermore, the capability to deposit Cu2O films with low film stress at low temperatures on plastic substrates renders this approach favourable for fabrication of flexible p-n junction solar cells. © 2011 Elsevier B.V. All rights reserved.