Polarisation dependent all-optical nonlinearity far from the bandedge in active GaAs/AlGaAs quantum well waveguides

This paper describes a measurement on a GaAs quantum well waveguide with a high built in field across the quantum wells at a wavelength far from the bandedge. The device structure used for the measurement has been fabricated at STC Technology Ltd and is that of a standard laser ridge structure. In fabrication double heterostructure layers are grown on a [001] n + GaAs substrate, with the active region containing two intrinsic GaAs quantum wells of 10nm thickness separated by 10nm. A 4μm wide ridge is etched to provide transverse optical guiding. The experimental work has involved the use of 1.06μm wavelength light from a Q-switched Nd:YAG laser. Any induced change in refractive index is determined by measuring the change in transmission of the quantum well waveguide Fabry-Perot cavity. The waveguide is placed on a Peltier temperature controller to allow thermal tuning.

Er3+-doped glass-polymer composite thin films fabricated using combinatorial pulsed laser deposition

Siloxane Polymer exhibits low loss in the 800-1500 nm range which varies between 0.01 and 0.66 dB cm1. It is for such low loss the material is one of the most promising candidates in the application of engineering passive and active optical devices [1, 2]. However, current polymer fabrication techniques do not provide a methodology which allows high structurally solubility of Er3+ ions in siloxane matrix. To address this problem, Yang et al.[3] demonstrated a channel waveguide amplifier with Nd 3+-complex doped polymer, whilst Wong and co-workers[4] employed Yb3+ and Er3+ co-doped polymer hosts for increasing the gain. In some recent research we demonstrated pulsed laser deposition of Er-doped tellurite glass thin films on siloxane polymer coated silica substrates[5]. Here an alternative methodology for multilayer polymer-glass composite thin films using Er3+ - Yb3+ co-doped phosphate modified tellurite (PT) glass and siloxane polymer is proposed by adopting combinatorial pulsed laser deposition (PLD). © 2011 IEEE.

Low power all-optical switch in a passive InGaAsP multiple quantum well waveguide

We demonstrate the use of resonant bandfilling nonlinearity in an InGaAsP/InGaAsP Multiple Quantum Well (MQW) waveguide due to photogenerated carriers to obtain switching at pulse powers, which can readily be obtained from an erbium amplified diode laser source. In order to produce gating a polarisation rotation gate was used, which relies on an asymmetry in the nonlinear refraction on the principle axes of the waveguide.

Effects of pedestal suppression on gain-switched laser sources for 40 Gbit/s OTDM transmission

The performance of 40 Gbit/s optical time-division multiplexed (OTDM) communication systems can be severely limited when the extinction ratio of the optical pulses is low. This is a consequence of the coherent interference noise between individual OTDM channels. When taken alone, the multiple quantum well-distributed feedback laser+dispersion compensating fiber source exhibits a relatively poor extinction ratio which impairs its potential for use in a 40 Gbit/s OTDM system. However, with the addition of an electroabsorption modulator to suppress the pulse pedestals to better than 30 dB extinction, coherent interference noise is reduced, the bit-error-rate performance is greatly improved, and the source shows good potential for 40 Gbit/s OTDM communication.

10-Gbits/s all-optical 3R regeneration and format conversion using a gain-switched DFB laser

A strain-compensated multiple quantum well device is used as a DFB laser, this has been optimized for low jitter gain switched operation at 10 GHz. The signal is transmitted down 80 km of standard fiber then amplified, filtered and polarization controlled before being injected into a DFB laser. The purpose of this regeneration process is to gain switch the DFB with the extracted clock signal in order to retime the converted signal. This process also simultaneously converts the input NRZ format to an output RZ data to format and results in a signal whose optical power and extinction ratio are considerably improved by the regeneration process.

Nanotube-based passively mode-locked Ytterbium-pumped Raman laser

Over the past decades mode-locked fibre lasers have been extensively refined and developed, with most research efforts focussing on employing rare-earth doped fibres as the active elements [1]. This presents the problem that operation is limited to regions of the spectrum where such elements exhibit gain [1]. Raman amplification in silica fibre is an attractive way to overcome this spectral limitation, with gain available across the entire transparency window (300 nm - 2300 nm) [2-4]. There have been a number of reports utilising Raman gain in ultrashort pulse sources [2-4], however none using a broadband saturable absorber, such as carbon nanotubes [5-7] and graphene [7-9]. A broadband saturable absorber is an essential pre-requisite in order to fully exploit the wavelength flexibility provided by the Raman gain in short pulse mode-locked fiber lasers. © 2011 IEEE.

Plans for laser spectroscopy of trapped cold hydrogen-like HCI

Laser spectroscopy studies are being prepared to measure the 1s ground state hyperfine splitting in trapped cold highly charged ions. The purpose of such experiments is to test quantum electrodynamics in the strong electric field regime. These experiments form part of the HITRAP project at GSI. A brief review of the planned experiments is presented. © 2005 Elsevier B.V. All rights reserved.