Computational study of viscous effects on lobed mixer flow features and performance

This article describes a computational study of viscous effects on lobed mixer flowfields. The computations, which were carried out using a compressible, three-dimensional, unstructured-mesh Navier-Stokes solver, were aimed at assessing the impacts on mixer performance of inlet boundary-layer thickness and boundary-layer separation within the lobe. The geometries analyzed represent a class of lobed mixer configurations used in turbofan engines. Parameters investigated included lobe penetration angles from 22 to 45 deg, stream-to-stream velocity ratios from 0.5 to 1.0, and two inlet boundary-layer displacement thicknesses. The results show quantitatively the increasing influence of viscous effects as lobe penetration angle is increased. It is shown that the simple estimate of shed circulation given by Skebe et al. (Experimental Investigation of Three-Dimensional Forced Mixer Lobe Flow Field, AIAA Paper 88-3785, July, 1988) can be extended even to situations in which the flow is separated, provided an effective mixer exit angle and height are defined. An examination of different loss sources is also carried out to illustrate the relative contributions of mixing loss and of boundary-layer viscous effects in cases of practical interest.

A comparative study of plasma-enhanced chemical vapor gate dielectrics for solution-processed polymer thin-film transistor circuit integration

This paper considers plasma-enhanced chemical vapor deposited (PECVD) silicon nitride (SiNx) and silicon oxide (SiOx) as gate dielectrics for organic thin-film transistors (OTFTs), with solution-processed poly[5, 5′ -bis(3-dodecyl-2-thienyl)-2, 2′ -bithiophene] (PQT-12) as the active semiconductor layer. We examine transistors with SiNx films of varying composition deposited at 300 °C as well as 150 °C for plastic compatibility. The transistors show over 100% (two times) improvement in field-effect mobility as the silicon content in SiNx increases, with mobility (μFE) up to 0.14 cm2 /V s and on/off current ratio (ION / IOFF) of 108. With PECVD SiOx gate dielectric, preliminary devices exhibit a μFE of 0.4 cm2 /V s and ION / IOFF of 108. PQT-12 OTFTs with PECVD SiNx and SiOx gate dielectrics on flexible plastic substrates are also presented. These results demonstrate the viability of using PECVD SiN x and SiOx as gate dielectrics for OTFT circuit integration, where the low temperature and large area deposition capabilities of PECVD films are highly amenable to integration of OTFT circuits targeted for flexible and lightweight applications. © 2008 American Institute of Physics.

Effects of surface roughness on airframe noise

The generation of sound by turbulent boundary layer flow at low Mach number over a rough wall is investigated by applying the theoretical model which describes the scattering of the turbulence near field into sound by roughness elements. Attention is focused on the numerical method to approximately quantify the absolute level of the roughness noise radiated to far field. Empirical models for the source statistics are obtained by scaling smooth-wall data through increased skin friction velocity and boundary layer thickness for the rough surface. Numerical integration is performed to determine the roughness noise, and it reproduces the spectral characteristics of the available empirical formula and experimental data. Experiments are conducted to measure the radiated sound from two rough plates in an open jet by four 1/2'' free-field condenser microphones. The measured noise spectra of the rough plates are above that of a smooth plate in 1-2.5 kHz frequency and exhibits encouraging agreement with the predicted spectra. Also, a phased microphone array is utilized to localize the sound source, and it confirms that the rough plates generate higher source strengthes in this frequency range. A parametric study illustrates that the roughness height and roughness density significantly affect the far-field radiated roughness noise with the roughness height having the dominant effect. The estimates of the roughness noise for a Boeing 757 sized aircraft wing show that in high frequency region the sound radiated from surface roughness may exceed that from the trailing edge, and higher overall sound pressure levels for the roughness noise are also observed.

Multi-field simulations and characterization of CMOS-MEMS high-temperature smart gas sensors based on SOI technology

This paper describes multiple field-coupled simulations and device characterization of fully CMOS-MEMS-compatible smart gas sensors. The sensor structure is designated for gas/vapour detection at high temperatures (>300 °C) with low power consumption, high sensitivity and competent mechanic robustness employing the silicon-on-insulator (SOI) wafer technology, CMOS process and micromachining techniques. The smart gas sensor features micro-heaters using p-type MOSFETs or polysilicon resistors and differentially transducing circuits for in situ temperature measurement. Physical models and 3D electro-thermo-mechanical simulations of the SOI micro-hotplate induced by Joule, self-heating, mechanic stress and piezoresistive effects are provided. The electro-thermal effect initiates and thus affects electronic and mechanical characteristics of the sensor devices at high temperatures. Experiments on variation and characterization of micro-heater resistance, power consumption, thermal imaging, deformation interferometry and dynamic thermal response of the SOI micro-hotplate have been presented and discussed. The full integration of the smart gas sensor with automatically temperature-reading ICs demonstrates the lowest power consumption of 57 mW at 300 °C and fast thermal response of 10 ms. © 2008 IOP Publishing Ltd.

Switch-level timing verification for CMOS circuits. A semianalytic approach

The paper describes a semianalytic slope delay model for CMOS switch-level timing verification. It is characterised by classification of the effects of the input slope, internal size and load capacitance of a logic gate on delay time, and then the use of a series of carefully chosen analytic functions to estimate delay times under different circumstances. In the field of VLSI analysis, this model achieves improvements in speed and accuracy compared with conventional approaches to transistor-level and switch-level simulation.

Field emission vacuum power switch using vertically aligned carbon nanotubes

The best field emission properties from carbon nanotube cathodes were obtained when their heights, diameters and spacings were optimized. Field emission currents as high as 10 mA were obtained from 1 cm × 1 cm vertically aligned CNT cathode with optimized parameters grown using dc plasma CVD in situ. It was found that in order to obtain large emission current of >10 mA, space charge effects within the electron beam must be taken into account.

Tuning of the electronic characteristics of ZnO nanowire field effect transistors by proton irradiation.

We demonstrated a controllable tuning of the electronic characteristics of ZnO nanowire field effect transistors (FETs) using a high-energy proton beam. After a short proton irradiation time, the threshold voltage shifted to the negative gate bias direction with an increase in the electrical conductance, whereas the threshold voltage shifted to the positive gate bias direction with a decrease in the electrical conductance after a long proton irradiation time. The electrical characteristics of two different types of ZnO nanowires FET device structures in which the ZnO nanowires are placed on the substrate or suspended above the substrate and photoluminescence (PL) studies of the ZnO nanowires provide substantial evidence that the experimental observations result from the irradiation-induced charges in the bulk SiO(2) and at the SiO(2)/ZnO nanowire interface, which can be explained by a surface-band-bending model in terms of gate electric field modulation. Our study on the proton-irradiation-mediated functionalization can be potentially interesting not only for understanding the proton irradiation effects on nanoscale devices, but also for creating the property-tailored nanoscale devices.

Self-aligned coupled nanowire transistor.

The integration of multiple functionalities into individual nanoelectronic components is increasingly explored as a means to step up computational power, or for advanced signal processing. Here, we report the fabrication of a coupled nanowire transistor, a device where two superimposed high-performance nanowire field-effect transistors capable of mutual interaction form a thyristor-like circuit. The structure embeds an internal level of signal processing, showing promise for applications in analogue computation. The device is naturally derived from a single NW via a self-aligned fabrication process.

Stepped gate polysilicon thin film transistor for large area power applications

For the first time, we report a new poly-Si stepped gate Thin Film Transistor (SG TFT) on glass. The Density of States extracted from measured I-V characteristics has been used to evaluate the device performance with a two dimensional device simulator. The results show that the three-terminal SG TFT device has a switching speed comparable to a low voltage structure and the high on-current capability of a metal field plate (MFP) TFT and the potential for comparable breakdown characteristics.

Carbon based bottom gate thin film transistor

This paper describes the fabrication and characterization of a carbon based, bottom gate, thin film transistor (TFT). The active layer is formed from highly sp2 bonded nitrogenated amorphous carbon (a-C:N) which is deposited at room temperature using a filtered cathodic vacuum arc technique. The TFT shows p-channel operation. The device exhibits a threshold voltage of 15 V and a field effect mobility of 10-4 cm2 V-1 s-1 . The valence band tail of a-C:N is observed to be much shallower than that of a-Si:H, but does not appear to severely impede the shift of the Fermi level. This may indicate that a significant proportion of the a-C tail states can still contribute to conduction.

Wake, shock and potential field interactions in a 1.5 stage turbine: Part I: Vane-rotor and rotor-vane interaction

The composition of the time-resolved surface pressure field around a high-pressure rotor blade caused by the presence of neighboring blade rows was studied, with the individual effects of wake, shock and potential field interaction being determined. Two test geometries were considered: first, a high-pressure turbine stage coupled with a swan-necked diffuser exit duct; secondly, the same high-pressure stage but with a vane located in the downstream duct. Both tests were carried out at engine-representative Mach and Reynolds numbers. By comparing the results to time-resolved computational predictions of the flowfield, the accuracy with which the computation predicts blade interaction was determined. It was found that in addition to upstream vane-rotor and rotor-downstream vane interactions, a new interaction mechanism was found resulting from the interaction between the downstream vane's potential field and the upstream vane's trailing edge potential field and shock.

Wake, shock and potential field interactions in a 1.5 stage turbine: Part II: Vane-vane interaction and discussion of results

The composition of the time-resolved surface pressure field around a high-pressure rotor blade caused by the presence of neighboring blade rows was studied, with the individual effects of wake, shock and potential field interaction being determined. Two test geometries were considered: first, a high-pressure turbine stage coupled with a swan-necked diffuser exit duct; secondly, the same high-pressure stage but with a vane located in the downstream duct. Both tests were carried out at engine-representative Mach and Reynolds numbers. By comparing the results to time-resolved computational predictions of the flowfield, the accuracy with which the computation predicts blade interaction was determined. Evidence was obtained that for a large downstream vane, the flow conditions in the rotor passage, at any instant in time, are close to being steady state.

Reynolds number influence on turbulent blocking effects of a rigid plane boundary (2nd report, direct numerical simulation using townsend's eddy forcing)

The Reynolds number influence on turbulent blocking effects by a rigid plane boundary is studied using direct numerical simulation (DNS). A new forcing method using 'simple model eddies' (Townsend 1976) for DNS of stationary homogeneous isotropic turbulence is proposed. A force field is obtained in real space by sprinkling many space-filling 'simple model eddies' whose centers are randomly but uniformly distributed in space and whose axes of rotation are random. The method is applied to a shear-free turbulent boundary layer over a rigid plane boundary and the blocking effects are investigated. The results show that stationary homogeneous isotropic turbulence is generated in real space using the present method. By using different model eddies with different sizes and rotation speeds, we could change the turbulence properties such as the integral and micro scales, the turbulent Reynolds number and the isotropy of turbulence. Turbulence intensities near the wall showed good agreements with the previous measurement and the linear analysis based on a rapid distortion theory (RDT). The splat effect (i.e., turbulence intensities of the components parallel to the boundary are amplified) occurs near the boundary and the viscous effect prohibits the splat effect at the quasi steady state at low Reynolds number.

Photoisomerising effects in nitroazo flexoelectric dimeric nematic systems

The photoisomerisation of a flexoelectric chiral nematic bimesogen system dyed with an azo dye has been investigated. The host material has a pitch and field dependent tilt angle that are temperature independent. Upon illumination by ultra violet, the azo dye molecules undergo a shape change from their trans to cis isomer. The effect of the shape change of the dye on the mixture is to decrease the I-N* transition temperatures, to increase the response times and to decrease the transmitted optical intensity. For the same reduced temperatures, the tilt angles, pitch and threshold voltages for the transition from focal conic to homeotropic textures are unchanged. The macroscopic parameters observed suggest that the orientational order parameter of the system is reduced by UV illumination. The cis isomers do not appear to separate from the host material or significantly change the flexoelectric coefficient. © 2001 OPA (Overseas Publishers Association) N.V. Published by license under the Gordon and Breach Science Publishers imprint, a member of the Taylor & Francis Group.