420 fs pulses from an ultrafast laser inscribed waveguide laser utilizing a carbon nanotube saturable absorber

We report the generation of 420 fs pulses of 1.56 μm light from a mode-locked ultrafast laser inscribed Er-doped waveguide laser. Passive mode-locking was achieved using a carbon nanotube saturable absorber. © 2010 Optical Society of America.

Generation of 63-nJ pulses from a fiber oscillator modelocked by nanotubes

We mode-lock a fiber oscillator with cavity length of ~1500m using nanotubes, achieving 1.55ps pulses with pulse energy up to 63nJ at 134 KHz repetition rate. © 2010 Optical Society of America.

Characterization of dynamic nonlinear absorption of carbon nanotube saturable absorber

Dynamic nonlinear absorption of composite-type single-wall carbon nanotube saturable absorbers is characterized using both femtosecond and picosecond pump pulses. Results are compared with numerical simulations based on two commonly used saturable absorber models. © 2010 Optical Society of America.

Femtosecond superradiant emission in AlGaInAs quantum-well semiconductor laser structures.

Ultrashort superradiant pulse generation from a 1580 nm AlGaInAs multiple quantum-well (MQW) semiconductor structure has been experimentally demonstrated for the first time. Superradiance is confirmed by analyzing the evolution of the optical temporal waveforms and spectra. Superradiant trends and regimes are studied as a function of driving condition. An optical pulse train is obtained at 1580 nm wavelength, with pulse durations as short as 390 fs and pulse peak powers of 7.2 W.

Gain-enhanced optical coherence in a high optical gain semiconductor

The propagation of ultrashort pulses in a traveling wave semiconductor amplifier is considered. It is demonstrated that the effective polarization relaxation time, which determines the coherence of the interaction of pulses within the medium, strongly depends on its optical gain. As a result, it is shown that at large optical gains the coherence time can exceed the transverse relaxation time T2 by an order of magnitude, this accounting for the strong femtosecond superradiant pulse generation commonly observed in semiconductor laser structures. © 2012 Elsevier B.V. All rights reserved.

1.4ps superradiant pulses from a GaN-based laser

The generation of picosecond superradiant pulses from 408nm a GaN/InGaN laser diode is demonstrated for the first time. Pulses with peak powers above 2.8W, pulse energy of 57pJ and durations of 1.4ps are generated. © 2012 OSA.