Standard cell automated layout for a CMOS 50 MHz 8 × 8 bit pipelined parallel dadda multiplier

An 8 × 8 pipelined parallel multiplier which uses the Dadda scheme is presented. The multiplier has been implemented in a 3-μm n-well CMOS process with two layers of metal using a standard cell automatic placement and routing program. The design uses a form of pipelined carry look-ahead adder in the final stage of summation, thus providing a significant contribution to the high performance of the multiplier. The design is expected to operate at a clock frequency of at least 50 MHz and has a flush time of seven clock cycles. The design illustrates a possible method of implementing an irregular architecture in VLSI using multiple levels of low-resistance, low-capacitance interconnect and automated layout techniques.

Investigating carbon materials for use as the electron emission source in a parallel electron-beam lithography system

A microelectronic parallel electron-beam lithography system using an array of field emitting microguns is currently being developed. This paper investigates the suitability of various carbon based materials for the electron source in this device, namely tetrahedrally bonded amorphous carbon (ta-C), nanoclustered carbon and carbon nanotubes. Ta-C was most easily integrated into a gated field emitter structure and various methods, such as plasma and heavy ion irradiation, were used to induce emission sites in the ta-C. However, the creation of such emission sites at desired locations appeared to be difficult/random in nature and thus the material was unsuitable for this application. In contrast, nanoclustered carbon material readily field emits with a high site density but the by-products from the deposition process create integration issues when using the material in a microelectronic gated structure. Carbon nanotubes are currently the most promising candidate for use as the emission source. We have developed a high yield and clean (amorphous carbon by-product free) PECVD process to deposit single free standing nanotubes at desired locations with exceptional uniformity in terms of nanotube height and diameter. Field emission from an array of nanotubes was also obtained. © 2001 Elsevier Science B.V.

Liquid crystal over silicon device characteristics for holographic projection of high-definition television images.

We discuss some fundamental characteristics of a phase-modulating device suitable to holographically project a monochrome video frame with 1280 x 720 resolution. The phase-modulating device is expected to be a liquid crystal over silicon chip with silicon area similar to that of commercial devices. Its basic characteristics, such as number of pixels, bits per pixel, and pixel dimensions, are optimized in terms of image quality and optical efficiency. Estimates of the image quality are made from the noise levels and contrast, while efficiency is calculated by considering the beam apodization, device dead space, diffraction losses, and the sinc envelope.