113 resultados para Optically pumped


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Silicon is now firmly established as a high performance photonic material. Its only weakness is the lack of a native electrically driven light emitter that operates CW at room temperature, exhibits a narrow linewidth in the technologically important 1300-1600 nm wavelength window, is small and operates with low power consumption. Here, an electrically pumped all-silicon nano light source around 1300-1600 nm range is demonstrated at room temperature. Using hydrogen plasma treatment, nano-scale optically active defects are introduced into silicon, which then feed the photonic crystal nanocavity to enhance the electrically driven emission in a device via Purcell effect. A narrow (Δλ=0.5 nm) emission line at 1515 nm wavelength with a power density of 0.4mW/cm2 is observed, which represents the highest spectral power density ever reported from any silicon emitter. A number of possible improvements are also discussed, that make this scheme a very promising light source for optical interconnects and other important silicon photonics applications. © 2012 by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

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We discuss the development of amorphous oxide semiconductor technology for optical sensor applications. In particular, we discuss the challenges of detecting visible wavelengths using this family of materials, which are known to be optically transparent due to their relatively large bandgap energy. One of the main issues with amorphous oxide semiconductors (AOS) is the ionization of the oxygen vacancies (VO) under illumination. While this can be beneficial in terms of optical absorption and high photoconductive gain, it can give rise to persistent photoconductivity (PPC). We will present techniques to overcome the PPC, and discuss how to achieve the high photoconductive gain for image sensor applications. © 2012 IEEE.

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We report the demonstration of an optically activated shutter based upon a short-pitch chiral nematic liquid crystal (LC) device sandwiched between crossed polarizers. This LC is comprised of photo-active chiral dopants. In the trans-state, the LC appears dark between crossed polarizers due to the very short pitch. As the pitch is extended through exposure to ultraviolet light, the device becomes transmissive reaching a maximum for a particular value of the pitch. As a result, it is possible to switch between the light and dark states by subjecting the device to visible light so as to cause a cis-trans photo-isomerisation. © 2013 AIP Publishing LLC.

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We demonstrate a mid-infrared Raman-soliton continuum extending from 1.9 to 3 μm in a highly germanium-doped silica-clad fiber, pumped by a nanotube mode-locked thulium-doped fiber system, delivering 12 kW sub-picosecond pulses at 1.95 μm. This simple and robust source of light covers a portion of the atmospheric transmission window. © 2013 Optical Society of America.

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20 Gb/s QPSK transmission over 100 m of OM3 fibre using an EOM VCSEL under QPSK modulation is reported. Bit-error-ratio measurements are carried out to express the quality of the transmission scheme. © 2011 Optical Society of America.

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An integrated EOM VCSELs is shown to offer high linearity (92dB/Hz2/3 at 6GHz) and by extrapolation ~90dB/Hz2/3 up to 20GHz. Successful modulation with IEEE 802.11g signals is demonstrated at 6GHz with a 12dB dynamic range. © OSA/OFC/NFOEC 2011.

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An electro-optically (EO) modulated oxide-confined vertical-cavity surface-emitting laser (VCSEL) containing a saturable absorber in the VCSEL cavity is studied. The device contains an EO modulator section that is resonant with the VCSEL cavity. A type-II EO superlattice medium is employed in the modulator section and shown to result in a strong negative EO effect in weak electric fields. Applying the reverse bias voltages to the EO section allows triggering of short pulses in the device. Digital data transmission (return-to-zero pseudo-random bit sequence, 27-1) at 10Gb/s at bit-error-rates well below 10-9 is demonstrated. © 2014 AIP Publishing LLC.

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We report on spatial pattern formation, and appearances of 'optical bullet holes' in single-mode microcavities that are filled with liquid-crystals, when pumped above the cavity resonance frequency. These phenomena only occur beyond the bistability threshold. ©2002 Optical Society of America.

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Diode-pumped, solid-state (DPSS) lasers with multiwavelength capability have become an industrial reality in recent years. Multiwavelength capability allows DPSS lasers to perform operations such as micromachining in a variety of engineering materials such as ceramics, metals and polymers. A series of experiments was performed to investigate how shielding gas environments and gas pressure affect the ability to cut and machine chromium-rich die steels. Results from this study reveal that traditional plasma-controlling gases have a detrimental e�ffect on the surface morphology of micromachined components.

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The paper briefly reviews the major forms of optical bistability in active optical devices compatible for use in gigabit optical communication systems, and reports an entirely new optical bistability for the first time. Unlike previous devices, the two bistable states of the optical device are each a series of picosecond optical pulses at 1 GHz or greater repetition rates, and are distinguished by a half period temporal shift between their temporal positions in relation to a clock pulse. The bistable device is based on a gain switched semiconductor laser. Theoretical studies suggest 100-ps switching speeds might be achieved, and experimental results are reported indicating optically triggered switching times of 500 ps. © 1987, American Medical Association. All rights reserved.

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Band-edge liquid crystal lasers are of interest for a number of applications including laser projection displays. Herein, we demonstrate simultaneous red-green-blue lasing from a single liquid crystal sample by creating a two-dimensional laser array fabricated from dye-doped chiral nematic liquid crystals. By forming a pitch gradient across the cell, and optically pumping the sample using a lenslet array, a polychromatic laser array can be observed consisting simultaneously of red-green-blue colors. Specifically, the two-dimensional polychromatic array could be used to produce a laser-based display, with low speckle and wide color gamut, whereby no complex fabrication procedure is required to generate the individual 'pixels'.