89 resultados para NEURONAL GAIN
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Etched VCSEL sources are reported which avoid bandwidth collapse in multimode fibre using a simple coupling technique to control the launch. These devices have allowed better than over-filled launch bandwidth for alignment tolerances of ±7 microns.
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A strain-compensated multiple quantum well device is used as a DFB laser, this has been optimized for low jitter gain switched operation at 10 GHz. The signal is transmitted down 80 km of standard fiber then amplified, filtered and polarization controlled before being injected into a DFB laser. The purpose of this regeneration process is to gain switch the DFB with the extracted clock signal in order to retime the converted signal. This process also simultaneously converts the input NRZ format to an output RZ data to format and results in a signal whose optical power and extinction ratio are considerably improved by the regeneration process.
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A type of adaptive, closed-loop controllers known as self-tuning regulators present a robust method of eliminating thermoacoustic oscillations in modern gas turbines. These controllers are able to adapt to changes in operating conditions, and require very little pre-characterisation of the system. One piece of information that is required, however, is the sign of the system's high frequency gain (or its 'instantaneous gain'). This poses a problem: combustion systems are infinite-dimensional, and so this information is never known a priori. A possible solution is to use a Nussbaum gain, which guarantees closed-loop stability without knowledge of the sign of the high frequency gain. Despite the theory for such a controller having been developed in the 1980s, it has never, to the authors' knowledge, been demonstrated experimentally. In this paper, a Nussbaum gain is used to stabilise thermoacoustic instability in a Rijke tube. The sign of the high frequency gain of the system is not required, and the controller is robust to large changes in operating conditions - demonstrated by varying the length of the Rijke tube with time. Copyright © 2008 by Simon J. Illingworth & Aimee S. Morgans.
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The fluid dynamic operation of a valveless pulse combustor has been studied experimentally and numerically. Through phase-locked chemiluminescence and pressure measurements it is shown that mechanical energy is created periodically in the flame surface, with an efficiency of 1.6%. This mechanical energy leaves the pulse combustor through unsteady jets at the aerovalve inlet and the tailpipe exit stations. Two thermodynamically distinct flows are identified: a flow that is transported from inlet to exit and participates in combustion along the way, and a flow that is ingested and then ejected from the combustor without undergoing combustion. It is the latter of these two flows which has the greatest quantity of net work done on it. Copyright © 2008 by the American Institute of Aeronautics and Astronautics, Inc.
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If the conventional steady flow combustor of a gas turbine is replaced with a device which achieves a pressure gain during the combustion process then the thermal efficiency of the cycle is raised. All such 'Pressure Gain Combustors' (e.g. PDEs, pulse combustors or wave rotors) are inherently unsteady flow devices. For such a device to be practically installed in a gas turbine it is necessary to design a downstream row of turbine vanes which will both accept the combustors unsteady exit flow and deliver a flow which the turbine rotor can accept. The design requirements of such a vane are that its exit flow both retains the maximum time-mean stagnation pressure gain (the pressure gain produced by the combustor is not lost) and minimises the amplitude of unsteadiness (reduces unsteadiness entering the downstream rotor). In this paper the exit of the pressure gain combustor is simulated with a cold unsteady jet. The first stage vane is simulated by a one-dimensional choked ejector nozzle with no turning. The time-mean and rms stagnation pressure at nozzle exit is measured. A number of geometric configurations are investigated and it is shown that the optimal geometry both maximizes time mean stagnation pressure gain (75% of that in the exit of the unsteady jet) and minimizes the amplitude of unsteadiness (1/3 of that in the primary jet). The structure of the unsteady flow within the ejector nozzle is determined computationally. Copyright © 2009 by J Heffer and R Miller.
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Replacing a conventional combustor in a gas turbine with one that produces a pressure gain could significantly raise cycle efficiency. For this efficiency gain to be achieved the exit flow from the combustor must be coupled to the downstream turbine such that the pressure gain produced by the combustor is retained and such that the turbine efficiency is maintained. The exit flow from a pressure gain combustor will often contain a high velocity unsteady jet. It has previously been proposed that ejectors should be used to harness the energy in the unsteady jet, this paper proposes combining an ejector with the first stage vane, producing a single compact component that preserves the combustion driven pressure gain and delivers a suitable flow to the turbine so that its efficiency is not compromised. This novel component has been experimentally tested for the first time. The performance of this first prototype design is found to be low due to high levels of loss generated by secondary flows. However possible mitigation strategies are discussed. It is shown that the unsteadiness at exit form the ejector-vane is reduced compared to the inlet flow. If a pulse combustor were incorporated into a gas turbine, it is unlikely that the level of unsteadiness experienced in a downstream rotor will be significantly larger that that due to the periodic passing of upstream wakes. Copyright © 2010 by Jonathan Heffer.
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This paper explores the long term development of networks of glia and neurons on patterns of Parylene-C on a SiO 2 substrate. We harvested glia and neurons from the Sprague-Dawley (P1-P7) rat hippocampus and utilized an established cell patterning technique in order to investigate cellular migration, over the course of 3 weeks. This work demonstrates that uncontrolled glial mitosis gradually disrupts cellular patterns that are established early during culture. This effect is not attributed to a loss of protein from the Parylene-C surface, as nitrogen levels on the substrate remain stable over 3 weeks. The inclusion of the anti-mitotic cytarabine (Ara-C) in the culture medium moderates glial division and thus, adequately preserves initial glial and neuronal conformity to underlying patterns. Neuronal apoptosis, often associated with the use of Ara-C, is mitigated by the addition of brain derived neurotrophic factor (BDNF). We believe that with the right combination of glial inhibitors and neuronal promoters, the Parylene-C based cell patterning method can generate structured, active neural networks that can be sustained and investigated over extended periods of time. To our knowledge this is the first report on the concurrent application of Ara-C and BDNF on patterned cell cultures. © 2011 Delivopoulos, Murray.
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The increasing use of patterned neural networks in multielectrode arrays and similar devices drives the constant development and evaluation of new biomaterials. Recently, we presented a promising technique to guide neurons and glia reliably and effectively. Parylene-C, a common hydrophobic polymer, was photolithographically patterned on silicon oxide (SiO(2)) and subsequently activated via immersion in serum. In this article, we explore the effects of ultraviolet (UV)-induced oxidation on parylene's ability to pattern neurons and glia. We exposed parylene-C stripe patterns to increasing levels of UV radiation and found a dose-dependent reduction in the total mass of patterned cells, as well as a gradual loss of glial and neuronal conformity to the patterns. In contrast, nonirradiated patterns had superior patterning results and increased presence of cells. The reduced cell adhesion and patterning after the formation of aldehyde and carboxyl groups on UV-radiated parylene-C supports our hypothesis that cell adhesion and growth on parylene is facilitated by hydrophobic adsorption of serum proteins. We conclude that unlike other cell patterning schemes, our technique does not rely on photooxidation of the polymer. Nonetheless, the precise control of oxygenated groups on parylene could pave the way for the differential binding of proteins and other molecules on the surface, aiding in the adhesion of alternative cell types. (c) 2010 Wiley Periodicals, Inc. J Biomed Mater Res, 2010.
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The propagation of ultrashort pulses in a traveling wave semiconductor amplifier is considered. It is demonstrated that the effective polarization relaxation time, which determines the coherence of the interaction of pulses within the medium, strongly depends on its optical gain. As a result, it is shown that at large optical gains the coherence time can exceed the transverse relaxation time T2 by an order of magnitude, this accounting for the strong femtosecond superradiant pulse generation commonly observed in semiconductor laser structures. © 2012 Elsevier B.V. All rights reserved.
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In this presentation, we report excellent electrical and optical characteristics of a dual gate photo thin film transistor (TFT) with bi-layer oxide channel, which was designed to provide virgin threshold voltage (V T) control, improve the negative bias illumination temperature stress (NBITS) reliability, and offer high photoconductive gain. In order to address the photo-sensitivity of phototransistor for the incoming light, top transparent InZnO (IZO) gate was employed, which enables the independent gate control of dual gate photo-TFT without having any degradation of its photosensitivity. Considering optimum initial V T and NBITS reliability for the device operation, the top gate bias was judiciously chosen. In addition, the speed and noise performance of the photo-TFT is competitive with silicon photo-transistors, and more importantly, its superiority lies in optical transparency. © 2011 IEEE.
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We calculate the density of photon states (DOS) of the normal modes in dye-doped chiral nematic liquid crystal (LC) cells in the presence of various loss mechanisms. Losses and gain are incorporated into the transmission characteristics through the introduction of a small imaginary part in the dielectric constant perpendicular and along the director, for which we assume no frequency dispersion. Theoretical results are presented on the DOS in the region of the photonic band gap for a range of values of the loss coefficient and different values of the optical anisotropy. The obtained values of the DOS at the photonic band gap edges predict a reversal of the dominant modes in the structure. Our results are found to be in good agreement with the experimentally obtained excitation thresholds in chiral nematic LC lasers. The behavior of the DOS is also discussed for amplifying LC cells providing additional insight to the lasing mechanism of these structures. © 2012 American Physical Society.
Resumo:
We calculate the density of photon states (DOS) of the normal modes in dye-doped chiral nematic liquid crystal (LC) cells in the presence of various loss mechanisms. Losses and gain are incorporated into the transmission characteristics through the introduction of a small imaginary part in the dielectric constant perpendicular and along the director, for which we assume no frequency dispersion. Theoretical results are presented on the DOS in the region of the photonic band gap for a range of values of the loss coefficient and different values of the optical anisotropy. The obtained values of the DOS at the photonic band gap edges predict a reversal of the dominant modes in the structure. Our results are found to be in good agreement with the experimentally obtained excitation thresholds in chiral nematic LC lasers. The behavior of the DOS is also discussed for amplifying LC cells providing additional insight to the lasing mechanism of these structures.
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We present quantitative analysis of the ultra-high photoconductivity in amorphous oxide semiconductor (AOS) thin film transistors (TFTs), taking into account the sub-gap optical absorption in oxygen deficiency defects. We analyze the basis of photoconductivity in AOSs, explained in terms of the extended electron lifetime due to retarded recombination as a result of hole localization. Also, photoconductive gain in AOS photo-TFTs can be maximized by reducing the transit time associated with short channel lengths, making device scaling favourable for high sensitivity operation. © 2012 IEEE.