Selective epitaxial growth in silicon on insulator: Planarity and mass flow

Seeded zone-melt recrystallization using a dual electron beam system has been performed on silicon-on-insulator material, which was prepared with single-crystal silicon filling of the seed windows by selective epitaxial growth. The crystal quality has been assessed by a variety of microscopic techniques, and it is shown that single-crystal films 0.5-1.0 μm thick over 1.0 μm of isolating oxide may be prepared by this method. These films have considerably less lateral variation in thickness than standard material, in which the windows are not so filled. The filling method is suitable for both single- and multiple-layer silicon-on-insulator, and gives the advantages of excellent layer uniformity after recrystallization and improved planarity of the whole chip structure. Experiments using various amounts of seed window filling have shown that the lateral variations of silicon film thickness seen in unplanarized material are due to stress relief in the cap oxide when the silicon film is molten, rather than the effect previously postulated in which they were assumed to be due to the contraction of silicon on melting.

Synthesis and properties of a new series of low-molar-mass organo-siloxane derivatives

Two series of ferroelectric liquid crystalline organo-siloxanes containing a laterally attached halogen on the phenyl ring have been synthesised and characterised to determine the impact of the siloxane group and the halogen on the mesomorphism and electro-optic switching properties. Both monomesogenic and bimesogenic compounds have been studied. The monomesogenic derivatives were found to be ferroelectric with high tilt and Ps. The tilt angle of 45° and the Ps of 95nC/cm2 are almost temperature independent. The bimesogenic bromo substituted derivatives showed mainly ferroelectric phases about 60°C wide. Maximum values for the spontaneous polarisation and the tilt angle were only slightly influenced by the length of the siloxane spacer. Altering the halogen to a fluorine shifted the liquid cystalline phase slightly to higher temperatures whilst maintaining the mesophase range of 60°C.