The effects of non-unity lewis numbers on turbulent premixed flame interactions in a twin V-flame configuration

The influence of Lewis number on turbulent premixed flame interactions is investigated using automatic feature extraction (AFE) applied to high-resolution flame simulation data. Premixed turbulent twin V-flames under identical turbulence conditions are simulated at global Lewis numbers of 0.4, 0.8, 1.0, and 1.2. Information on the position, frequency, and magnitude of the interactions is compared, and the sensitivity of the results to sample interval is discussed. It is found that both the frequency and magnitude of normal type interactions increases with decreasing Lewis number. Counternormal type interactions become more likely as the Lewis number increases. The variation in both the frequency and the magnitude of the interactions is found to be caused by large-scale changes in flame wrinkling resulting from differences in the thermo-diffusive stability of the flames. During flame interactions, thermo-diffusive effects are found to be insignificant due to the separation of time scales. © 2013 Copyright Taylor and Francis Group, LLC.

On the Performance of Base-isolated Buildings

This book contains a collection of papers on the measurement, prediction and control of sound transmission.

Base isolated buildings

Appropriate models are essential for guiding the effective design of base-isolated buildings. While simple models suggest some guiding principles, these are often too simple for making any useful predictions of isolation performance. A modeling approach by which predictions of isolation performance may be made is proposed, along with suggestions of how this may be implemented in practice. Use of the approach can lead to better predictions of isolation performance and more effective designs.

Base Isolation of Buildings for Control of Ground-borne Vibration

These works, edited by Malcolm Crocker, positioned Wiley as a major player in the acoustics reference market.

A discretized proportional base driver for Silicon Carbide Bipolar Junction Transistors

Silicon Carbide Bipolar Junction Transistors require a continuous base current in the on-state. This base current is usually made constant and is corresponding to the maximum collector current and maximum junction temperature that is foreseen in a certain application. In this paper, a discretized proportional base driver is proposed which will reduce, for the right application, the steady-state power consumption of the base driver. The operation of the proposed base driver has been verified experimentally, driving a 1200V/40A SiC BJT in a DC-DC boost converter. In order to determine the potential reduction of the power consumption of the base driver, a case with a dc-dc converter in an ideal electric vehicle driving the new European drive cycle has been investigated. It is found that the steady-state power consumption of the base driver can be reduced by approximately 63 %. The total reduction of the driver consumption is 2816 J during the drive cycle, which is slightly more than the total on-state losses for the SiC BJTs used in the converter. © 2013 IEEE.

A discretized proportional base driver for silicon carbide bipolar junction transistors

Silicon carbide (SiC) bipolar junction transistors (BJTs) require a continuous base current in the on-state. This base current is usually made constant and is corresponding to the maximum collector current and maximum junction temperature that is foreseen in a certain application. In this paper, a discretized proportional base driver is proposed which will reduce, for the right application, the steady-state power consumption of the base driver. The operation of the proposed base driver has been verified experimentally, driving a 1200-V/40-A SiC BJT in a dc-dc boost converter. In order to determine the potential reduction of the power consumption of the base driver, a case with a dc-dc converter in an ideal electric vehicle driving the new European drive cycle has been investigated. It is found that the steady-state power consumption of the base driver can be reduced by approximately 60%. The total reduction of the driver consumption is 3459 J during the drive cycle, which is slightly more than the total on-state losses for the SiC BJTs used in the converter. © 2013 IEEE.