p-MOS controlled lateral thyristor: A MOS controllable thyristor suitable for integration

A novel CMOS compatible lateral thyristor is proposed in this paper. Its thyristor conduction is fully controlled by a p-MOS gate. Loss of MOS control due to parasitic latch-up has been eliminated and triggering of the main thyristor at lower forward current achieved. The device operation has been verified by 2-D numerical simulations and experimental fabrication.

BEHAVIOUR OF FIXED CANTILEVER WALLS SUBJECT TO LATERAL SHAKING.

A programme of research on the seismic behaviour of retaining walls has been under way at Cambridge since 1981. Centrifuge tests have presently been conducted both on cantilever walls and isolated mass walls, retaining dry sands of varying grading and density. This paper is devoted to the modelling of fixed-base cantilever walls retaining Leighton Buzzard (14/25) sand of relative density 99% with a horizontal surface level with the crest of the wall. The base of the centrifuge container was used to fix the walls, and to provide a rigid lower boundary for the sand. No attempt was made to inhibit the propagation of compression waves from the side of the container opposite the inside face of the model wall. The detailed analysis of dynamic deflections and bending moments was made difficult by the anelastic nature of reinforced concrete, and the difficulty of measuring bending strains thereon. A supplementary programme of well-instrumented tests on Dural walls of similar stiffness, including the modelling of models, was therefore carried out. Refs.

A novel heavily doped drift-auxiliary cathode lateral insulated gate transistor structure

A novel CMOS-compatible, heavily doped drift auxiliary cathode lateral insulated gate transistor (HDD-ACLIGT) structure is analyzed using two-dimensional device simulation techniques. Simulation results indicate that low on-resistance and a fast turn-off time of less than 50 ns can be achieved by incorporating an additional n+ region which is self-aligned to the gate between the p+ auxiliary cathode and the p well, together with an extended p buried layer in an anode-shorted modified lateral insulated gate transistor (MLIGT) structure. The on-state and its transient performance are analyzed in detail. The on-state performances of the HDD-ACLIGT and the MLIGT are compared and discussed. The results indicate that the HDD-ACLIGT structure is well suited for HVICs. The device is also well suited for integration with self-aligned digital CMOS.

Dem analysis of soil-pipeline interaction in sand under lateral and upward movements at deep embedment

The soil-pipeline interactions under lateral and upward pipe movements in sand are investigated using DEM analysis. The simulations are performed for both medium and dense sand conditions at different embedment ratios of up to 60. The comparison of peak dimensionless forces from the DEM and earlier FEM analyses shows that, for medium sand, both methods show similar peak dimensionless forces. For dense sand, the DEM analysis gives more gradual transition of shallow to deep failure mechanisms than the FEM analysis and the peak dimensionless forces at very deep depth are higher in the DEM analysis than in the FEM analysis. Comparison of the deformation mechanism suggests that this is due to the differences in soil movements around the pipe associated with its particulate nature. The DEM analysis provides supplementary data of the soil-pipeline interaction in sand at deep embedment condition.