Effects of pedestal suppression on gain-switched laser sources for 40 Gbit/s OTDM transmission

The performance of 40 Gbit/s optical time-division multiplexed (OTDM) communication systems can be severely limited when the extinction ratio of the optical pulses is low. This is a consequence of the coherent interference noise between individual OTDM channels. When taken alone, the multiple quantum well-distributed feedback laser+dispersion compensating fiber source exhibits a relatively poor extinction ratio which impairs its potential for use in a 40 Gbit/s OTDM system. However, with the addition of an electroabsorption modulator to suppress the pulse pedestals to better than 30 dB extinction, coherent interference noise is reduced, the bit-error-rate performance is greatly improved, and the source shows good potential for 40 Gbit/s OTDM communication.

Nonlinear pulse switching and compression in a dispersion-imbalanced loop mirror

The results of the high-quality nonlinear pulse compression of gain-switched laser diode pulses using a two-cascade compression scheme are presented. The scheme incorporates a dispersive delay line and a nonlinear pulse compressor based on a dispersion-imbalanced fiber loop mirror (DILM). It is demonstrated that the DILM can be also used for the pulse compression with a compression ratio of 10 or higher.

Picosecond pulse source for OTDM/WDM applications based on arrayed waveguide grating

A novel technique for high quality femtosecond pulse generation from a gain-switched laser diode by means of pulse compression and transformation in a compact nonlinear fiber device, based on a dispersion-imbalanced fiber loop mirror (DILM) is demonstrated. This source allows the generation of extremely high quality pulses as short as 270 fs on demand with strong suppression of pulse pedestals. Spectral filtering in arrayed waveguide grating (AWG) converts the device into a compact multiwavelength source of high-quality picosecond pulses for optical time division multiplexing/wavelength division multiplexing applications.

High-quality pulse compressor for WDM/OTDM applications

The paper reports the results of a high-quality pulse source incorporating a gain-switched laser diode followed by a novel compact two-cascade fibre compression scheme. The pulse compression scheme incorporates a dispersive delay line and a nonlinear pulse compressor based on a dispersion-imbalanced fibre loop mirror (DILM). We analyse and demonstrate for the first time significant improvement of the loop performance by means of the chirped pulse switching. As a result, the DILM provides high-quality nonlinear pulse compression as well as rejection of the nonsoliton component. In the experiment, 20ps pulses from a gain switched laser diode are compressed to a duration of 300fs at a repetition rate in range 70MHz-10GHz. The pulses are pedestal free and transform-limited. Spectral filtering of the output signal by means of a bandpass filter results in generation of wavelength-tuneable picosecond pulses with a duration defined by the filter bandwidth. Alternatively, signal filtering by an arrayed waveguide grating (AWG) results in multichannel picosecond pulse generation for WDM and OTDM applications. The pulse source is built of standard components and is of compact and potentially robust design.

Nanotube-based passively mode-locked Ytterbium-pumped Raman laser

Over the past decades mode-locked fibre lasers have been extensively refined and developed, with most research efforts focussing on employing rare-earth doped fibres as the active elements [1]. This presents the problem that operation is limited to regions of the spectrum where such elements exhibit gain [1]. Raman amplification in silica fibre is an attractive way to overcome this spectral limitation, with gain available across the entire transparency window (300 nm - 2300 nm) [2-4]. There have been a number of reports utilising Raman gain in ultrashort pulse sources [2-4], however none using a broadband saturable absorber, such as carbon nanotubes [5-7] and graphene [7-9]. A broadband saturable absorber is an essential pre-requisite in order to fully exploit the wavelength flexibility provided by the Raman gain in short pulse mode-locked fiber lasers. © 2011 IEEE.

Theoretical model for dicke superradiance in a semiconductor laser device

A theoretical model for Dicke superradiance (SR) in diode lasers is proposed using the travelling wave method with a spatially resolved absorber and spectrally resolved gain. The role of electrode configuration and optical bandwidth are compared and contrasted as a route to enhance femtosecond pulse power. While pulse duration can be significantly reduced through careful absorber length specification, stability is degraded. However an increased spectral gain bandwidth of up to 150 nm is predicted to allow pulsewidth reductions of down to 10 fs and over 500-W peak power without further degradation in pulse stability. © 2011 IEEE.

500 fs wideband tunable fiber laser mode-locked by nanotubes

Sub-picosecond tunable ultrafast lasers are important tools for many applications. Here we present an ultrafast tunable fiber laser mode-locked by a nanotube based saturable absorber. The laser outputs ∼500fs pulses over a 33 nm range at 1.5μm. This outperforms the current achievable pulse duration from tunable nanotube mode-locked lasers. © 2012 Elsevier B.V. All rights reserved.

On the percussion drilling of SI using a 20W MOPA based YB fiber laser

A study on the nanosecond fiber laser interaction with silicon was performed experimentally for the generation of percussion drilled holes. Single pulse ablation experiments were carried out on mono crystalline 650μm thick Si wafers. Changes of the mass removal mechanism were investigated by varying laser fluence up to 68 J/cm2 and pulse duration from 50 ns to 200 ns. Hole width and depth were measured and surface morphology were studied using scanning electron microscopy (SEM) and optical interferometric profilometry (Veeco NT3300). High speed photography was also used to examine laser generated plasma expansion rates. The material removal rate was found to be influenced by the pulse energy, full pulse duration and pulse peak power. Single pulse ablation depth of 4.42 μm was achieved using a 200 ns pulse of 13.3 J/cm 2, giving a maximum machining efficiency of 31.86 μm per mJ. Holes drilled with an increased fluence but fixed pulse length were deeper, exhibited low recast, but were less efficient than those produced at a lower fluence. The increased peak power in this case led to high levels of plasma and vapour production. The expansion of which, results in a strong driving recoil force, an increase in the rate and volume of melt ejection, and cleaner hole formation. The experimental findings show that for efficient drilling at a given energy, a longer, lower peak power pulse is more desirable than a high peak power short pulse.

Influence of micro supersonic jets on micro percussion drilling of 316L stainless steel using nanosecond 355NM laser radiation

The interaction phenomena of nanosecond Q-switched diode-pumped solid state (DPSS) laser using 355nm radiation with 0.2mm thick 316L stainless steel foil was investigated at incident laser fluence range of 19 - 82Jcm-2. The characterization study was performed with and without the use of assist gas by utilizing micro supersonic minimum length nozzles (MLN), specifically designed for air at inlet chamber pressure of 8bar. MLN ranged in throat diameters of 200μm, 300μm, and 500μm respectively. Average etch rate per pulse under the influence of three micro supersonic impinging jets, for both oxygen and air showed the average etch rate was reduced when high-speed gas jets were utilized, compared to that without any gas jets, but significant variation was noticed between different jet sizes. Highest etch rate and quality was achieved with the smallest diameter nozzle, suggesting that micro nozzles can produce a viable process route for micro laser cutting.

250 MHz repetition rate monolithically integrated modulated mode-locked semiconductor laser

We present the first monolithically integrated semiconductor pulse source consisting of a mode-locked laser diode, Mach-Zehnder pulse picker, and semiconductor optical amplifier. Pairs of 5.6 ps pulses are generated at a 250 MHz repetition rate. © 2012 OSA.

Dual-wavelength, carbon nanotube mode-locked fiber laser

We demonstrate a dual-wavelength, carbon nanotube mode-locked Er fiber laser. The laser outputs two wavelengths at 1549nm and 1562nm, and each wavelength corresponds to pulse duration of ∼1.3ps and repetition rate of ∼11.27MHz. © 2012 IEEE.

2 μm solid-state laser mode-locked by single-layer graphene

We report a 2 μm ultrafast solid-state Tm: Lu2O3 laser, mode-locked by single-layer graphene, generating transform-limited ∼ 410 fs pulses, with a spectral width ∼ 11.1 nm at 2067 nm. The maximum average output power is 270 mW, at a pulse repetition frequency of 110 MHz. This is a convenient high-power transform-limited ultrafast laser at 2 μm for various applications, such as laser surgery and material processing. © 2013 American Institute of Physics.

Liquid crystalline chromophores for photonic band-edge laser devices

We present results on laser action from liquid crystal compounds whereby one sub-unit of the molecular structure consists of the cyano-substituted chromophore, {phenylene-bis (2-cyanopropene)}, similar to the basic unit of the semiconducting polymer structure poly(cyanoterephthalylidene). These compounds were found to exhibit nematic liquid crystal phases. In addition, by virtue of the liquid crystalline properties, the compounds were found to be highly miscible in wide temperature range commercial nematogen mixtures. When optically excited at λ = 355 nm, laser emission was observed in the blue/green region of the visible spectrum (480-530 nm) and at larger concentrations by weight than is achievable using conventional laser dyes. Upon increasing the concentration of dye from 2 to 5 wt.% the threshold was found to increase from Eth = 0.42 ± 0.02 μJ/pulse (≈20 mJ/cm2) to Eth = 0.66 ± 0.03 μJ/pulse (≈34 mJ/cm2). Laser emission was also observed at concentrations of 10 wt.% but was less stable than that observed for lower concentrations of the chromophore. © 2012 Elsevier B.V. All rights reserved.

Hybrid and passive mode-locking of a monolithic two-section MQW InGaN/GaN laser diode

We report the first hybrid mode-locking of a monolithic two-section multiple quantum well InGaN based laser diode. This device, with a length of 1.5 mm, has a 50-μm-long absorber section located at the back facet and generates a continuous stable 28.6 GHz pulse train with an average output power of 9.4 mW at an emission wavelength of 422 nm. Under hybrid mode-locking, the pulse width reduces to 4 ps, the peak power increases to 72 mW, and the microwave linewidth reduces by 13 dB to <500 kHz. We also observe the passive mode-locking with pulse width and peak power of 8 ps and 37 mW, respectively. © 1989-2012 IEEE.

Ultrashort pulse generation in diode lasers

The basic ideas and current state of the art of ultrashort pulse generation by injection lasers are reviewed. All developed techniques, including gain switching, Q-switching, and mode-locking are described and compared. A simple theoretical treatment of a diode laser which emits picosecond light pulses is discussed. Some fundamental limits of the pulse parameters are discussed. Finally, compression of chirped optical pulses by optical fibres and the soliton effect is considered. © 1992 Chapman & Hall.