111 resultados para Kang Hou


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A Nanoelectromechanical (NEM) device developed for dynamic random access memory (DRAM) is reported. A vertical nanotube structure is employed to form the electromechanical switch and capacitor structure. The mechanical movement of the nanotube defines 'On' and 'OFF' states and the electrical signals which result lead to charge storage in a vertical capacitor structure as in a traditional DRAM. The vertical structure contributes greatly to a decrease in cell dimension. The main concept of the NEM switch and capacitor can be applied to other memory devices as well. © 2005 IEEE.

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We demonstrate that the Mott metal-insulator transition (MIT) in single crystalline VO(2) nanowires is strongly mediated by surface stress as a consequence of the high surface area to volume ratio of individual nanowires. Further, we show that the stress-induced antiferromagnetic Mott insulating phase is critical in controlling the spatial extent and distribution of the insulating monoclinic and metallic rutile phases as well as the electrical characteristics of the Mott transition. This affords an understanding of the relationship between the structural phase transition and the Mott MIT.

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We have grown epitaxially orientation-controlled monoclinic VO2 nanowires without employing catalysts by a vapor-phase transport process. Electron microscopy results reveal that single crystalline VO2 nanowires having a [100] growth direction grow laterally on the basal c plane and out of the basal r and a planes of sapphire, exhibiting triangular and rectangular cross sections, respectively. In addition, we have directly observed the structural phase transition of single crystalline VO2 nanowires between the monoclinic and tetragonal phases which exhibit insulating and metallic properties, respectively, and clearly analyzed their corresponding relationships using in situ transmission electron microscopy.

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