Correlation between density of states distributions and the fermi level position in interfacial regions of amorphous silicon thin film transistors

This paper investigates the variation of the integrated density of states with conduction activation energy in hydrogenated amorphous silicon thin film transistors. Results are given for two different gate insulator layers, PECVD silicon oxide and thermally grown silicon dioxide. The different gate insulators produce transistors with very different initial transfer characteristics, but the variation of integrated density of states with conduction activation energy is shown to be similar.

Towards identification of a general model of damping

Characterization of damping forces in a vibrating structure has long been an active area of research in structural dynamics. In spite of a large amount of research, understanding of damping mechanisms is not well developed. A major reason for this is that unlike inertia and stiffness forces it is not in general clear what are the state variables that govern the damping forces. The most common approach is to use `viscous damping' where the instantaneous generalized velocities are the only relevant state variables. However, viscous damping by no means the only damping model within the scope of linear analysis. Any model which makes the energy dissipation functional non-negative is a possible candidate for a valid damping model. This paper is devoted to develop methodologies for identification of such general damping models responsible for energy dissipation in a vibrating structure. The method uses experimentally identified complex modes and complex natural frequencies and does not a-priori assume any fixed damping model (eg., viscous damping) but seeks to determine parameters of a general damping model described by the so called `relaxation function'. The proposed method and several related issues are discussed by considering a numerical example of a linear array of damped spring-mass oscillators.