DIRECT DETECTION OF PICOSECOND PULSES EMITTED BY AN INJECTION LASER WITH ACTIVE MODE LOCKING.

An Agat-SF linear-scan streak image-converter camera was used to record output pulses of 2. 7 psec duration generated by an injection laser with an external dispersive resonator operated in the active mode-locking regime. The duration of the pulses was determined by the reciprocal of the spectral width and the product of the duration and the spectral width was 0. 30.

Label-free detection of human prostate-specific antigen (hPSA) using film bulk acoustic resonators (FBARs)

Label-free detection of cancer biomarkers using low cost biosensors has promising applications in clinical diagnostics. In this work, ZnO-based thin film bulk acoustic wave resonators (FBARs) with resonant frequency of ∼1.5 GHz and mass sensitivity of 0.015 mg/m2 (1.5 ng/cm2) have been fabricated for their deployment as biosensors. Mouse monoclonal antibody, anti-human prostate-specific antigen (Anti-hPSA) has been used to bind human prostate-specific antigen (hPSA), a model cancer used in this study. Ellipsometry was used to characterize and optimise the antibody adsorption and antigen binding on gold surface. It was found that the best amount of antibody at the gold surface for effective antigen binding is around 1 mg/m2, above or below which resulted in the reduced antigen binding due to either the limited binding sites (below 1 mg/m2) or increased steric effect (above 1 mg/m2). The FBAR data were in good agreement with the data obtained from ellipsometry. Antigen binding experiments using FBAR sensors demonstrated that FBARs have the capability to precisely detect antigen binding, thereby making FBARs an attractive low cost alternative to existing cancer diagnostic sensors. © 2013 Elsevier B.V.

Electrical detection of trapped charge displacements using an ultra-thin SOI percolation transistor

Electrical detection of solid-state charge qubits requires ultrasensitive charge measurement, typically using a quantum point contact or single-electron-transistor, which imposes strict limits on operating temperature, voltage and current. A conventional FET offers relaxed operating conditions, but the back-action of the channel charge is a problem for such small quantum systems. Here, we discuss the use of a percolation transistor as a measurement device, with regard to charge sensing and backaction. The transistor is based on a 10nm thick SOI channel layer and is designed to measure the displacement of trapped charges in a nearby dielectric. At cryogenic temperatures, the trapped charges result in strong disorder in the channel layer, so that current is constrained to a percolation pathway in sub-threshold conditions. A microwave driven spatial Rabi oscillation of the trapped charge causes a change in the percolation pathway, which results in a measurable change in channel current. © The Electrochemical Society.

ChESS - Quick and robust detection of chess-board features

Localization of chess-board vertices is a common task in computer vision, underpinning many applications, but relatively little work focusses on designing a specific feature detector that is fast, accurate and robust. In this paper the 'Chess-board Extraction by Subtraction and Summation' (ChESS) feature detector, designed to exclusively respond to chess-board vertices, is presented. The method proposed is robust against noise, poor lighting and poor contrast, requires no prior knowledge of the extent of the chess-board pattern, is computationally very efficient, and provides a strength measure of detected features. Such a detector has significant application both in the key field of camera calibration, as well as in structured light 3D reconstruction. Evidence is presented showing its superior robustness, accuracy, and efficiency in comparison to other commonly used detectors, including Harris & Stephens and SUSAN, both under simulation and in experimental 3D reconstruction of flat plate and cylindrical objects. © 2013 Elsevier Inc. All rights reserved.

Graphene SOI CMOS sensors for detection of PPB levels of NO2 in air

There is considerable demand for sensors that are capable of detecting ultra-low concentrations (sub-PPM) of toxic gases in air. Of particular interest are NO2 and CO that are exhaust products of internal combustion engines. Electrochemical (EC) sensors are widely used to detect these gases and offer the advantages of low power, good selectivity and temporal stability. However, EC sensors are large (1 cm3), hand-made and thus expensive ($25). Consequently, they are unsuitable for the low-cost automotive market that demands units for less than $10. One alternative technology is SnO2 or WO3 resistive gas sensors that are fabricated in volume today using screen-printed films on alumina substrates and operate at 400°C. Unfortunately, they suffer from several disadvantages: power consumption is high 200 mW; reproducibility of the sensing element is poor; and cross-sensitivity is high. © 2013 IEEE.

Direct detection of molecular biorecognition by dipole sensing mechanism.

This work investigates the feasibility of transducing molecular-recognition events into a measurable potentiometric signal. It is shown for the first time that biorecognition of acetylcholine (ACh) can be translated to conformational changes in the enzyme, acetylcholine-esterase (AChE), which in turn induces a measurable change in surface potential. Our results show that a highly sensitive detector for ACh can be obtained by the dilute assembly of AChE on a floating gate derived field effect transistor (FG-FET). A wide concentration range response is observed for ACh (10(-2)-10(-9)M) and for the inhibitor carbamylcholine CCh (10(-6)-10(-11)M). These enhanced sensitivities are modeled theoretically and explained by the combined response of the device to local pH changes and molecular dipole variations due to the enzyme-substrate recognition event.

Fast, sensitive and low-noise nanowire and graphene field effect transistors for room-temperature detection of Terahertz quantum cascade laser emission

Antenna-coupled field effect transistors have been developed as plasma-wave THz detectors in both InAs nanowire and graphene channel materials. Room temperature operation has been achieved up to 3 THz, with noise equivalent power levels < 10-10 W/Hz1/2, and high-speed response already suitable for large area THz imaging applications. © 2013 IEEE.