Microwave signal transmission over a directly-modulated radio-over-fiber link using cascaded semiconductor optical amplifiers

We demonstrate a record 150km transmission of microwave signals by a directly-modulated radio-over-fiber link with a bit-error-rate of less than 10-12. Cascaded semiconductor optical amplifiers are employed in this link to extend the transmission link length. © 2005 Optical Society of America.

MIMO system capacity improvements using radio-over-fibre distributed antenna system technology

The effect of antenna separation in a 3×3 MIMO system using RoF DAS technology is investigated. Larger antenna separation is found to improve the throughput due to reduced channel correlation and improved SNR. © 2011 Optical Society of America.

Monolithic electro-optically modulated VCSEL suitable for radio over fibre applications to 20 GHz

An integrated EOM VCSELs is shown to offer high linearity (92dB/Hz 2/3 at 6GHz) and by extrapolation ∼90dB/Hz2/3 up to 20GHz. Successful modulation with IEEE 802.11g signals is demonstrated at 6GHz with a 12dB dynamic range. © 2011 Optical Society of America.

Radio over fibre enabled sensing and communications system for in building

This paper describes work on radio over fiber distributed antenna systems for improving the quality of radio coverage for in-building applications. The DAS network has also been shown to provide improved detection for Gen 2 UHF RFID tags. Using pre-distortion to reduce the problem of the RFID second harmonic, a simple heterogeneous sensing and communications system is demonstrated. © 2011 NOrthumbria University.

Effects of high-order laser distortion products in radio over free-space optical links

RoFSO links are found to be susceptible to high-order laser distortion making conventional SFDR ineffective as a performance indicator. For the first time, peak input power is demonstrated as a service-independent bound on dynamic range. © 2011 OSA.

Density, sp3 content and internal layering of DLC films by X-ray reflectivity and electron energy loss spectroscopy

A variety of hydrogenated and non-hydrogenated amorphous carbon thin films have been characterized by means of grazing-incidence X-ray reflectivity (XRR) to give information about their density, thickness, surface roughness and layering. We used XRR to validate the density of ta-C, ta-C:H and a-C:H films derived from the valence plasmon in electron energy loss spectroscopy measurements, up to 3.26 and 2.39 g/cm3 for ta-C and ta-C:H, respectively. By comparing XRR and electron energy loss spectroscopy (EELS) data, we have been able for the first time to fit a common electron effective mass of m*/me = 0.87 for all amorphous carbons and diamond, validating the `quasi-free' electron approach to density from valence plasmon energy. While hydrogenated films are found to be substantially uniform in density across the film, ta-C films grown by the filtered cathodic vacuum arc (FCVA) show a multilayer structure. However, ta-C films grown with an S-bend filter show a high uniformity and only a slight dependence on the substrate bias of both sp3 and layering.

How to achieve high mobility thin film transistors by direct deposition of silicon using 13.56 MHz RF PECVD?

CMOS nanocrystalline silicon thin film transistors with high field effect mobility are reported. The transistors were directly deposited by radio-frequency plasma enhanced chemical vapor deposition at 150°C The transistors show maximum field effect mobility of 450 cm2/V-s for electrons and 100 cm2/V-s for holes at room temperature. We attribute the high mobilities to a reduction of the oxygen content, which acts as an accidental donor. Indeed, secondary ion mass spectrometry measurements show that the impurity concentration in the nanocrystalline Si layer is comparable to, or lower than, the defect density in the material, which is already low thanks to hydrogen passivation.