Superconducting properties of Gd-Ba-Cu-O single grains processed from a new, Ba-rich precursor compound

Gd-Ba-Cu-O (GdBCO) single grains have been previously melt-processed successfully in air using a generic Mg-Nd-Ba-Cu-O (Mg-NdBCO) seed crystal. Previous research has revealed that the addition of a small amount of BaO 2 to the precursor powders prior to melt processing can suppress the formation of Gd/Ba solid solution, and lead to a significant improvement in superconducting properties of the single grains. Research into the effects of a higher Ba content on single grain growth, however, has been limited by the relatively small grain size in the earlier studies. This has been addressed by developing Ba-rich precursor compounds Gd-163 and Gd-143, fabricated specifically to enable the presence of greater concentrations of Ba during the melt process. In this study, we propose a new processing route for the fabrication of high performance GdBCO single grain bulk superconductors in air by enriching the precursor powder with these new Ba rich compounds. The influence of the addition of the new compounds on the microstructures and superconducting properties of GdBCO single grains is reported. © 2008 IOP Publishing Ltd.

Durability study of eleven years old cement-bentonite cut-off wall material

Comprehensive understanding of the long-term performance of cement-bentonite slurry trench cut-off walls is essential as these mixes may degrade when exposed to aggressive environments or when subjected to prolonged drying. A series of wetting-drying and immersion experiments was carried out to evaluate the durability characteristics of laboratory mixed samples and block field samples from 40 days to 11 years of age. For the wetting-drying tests, the samples buried in medium graded sand were subjected to periodical flooding and drying cycles. They were then used for permeability testing and unconfined compressive strength (UCS) testing. For the immersion tests, the samples confined in perforated molds were submerged in magnesium sulfate solution for 16 weeks and their microstructures were then analyzed using X-ray diffraction (XRD) technique. This paper identifies the effects of contaminant exposure on durability of cement-bentonite and the effects of aging by comparing 11 years old samples to younger samples. Test results showed that young or previously contaminated cement-bentonite mixes are more susceptible to sulfate attack than old or less contaminated mixes. Copyright ASCE 2008.

Long-term performance of cement-bentonite containment wall

The paper presents hydraulic conductivity, unconfined compression strength (UCS) and triaxial test results of an 11 year old slag-cement-bentonite (CB) cut-off wall material and identifies factors affecting their long-term performance. The laboratory tests were performed on three types of CB samples ranging from contaminated block field samples to uncontaminated laboratory cast samples. The results showed that hydraulic conductivity reduces till 3 years and UCS increases till 90 days, but there after it remains constant till 11 years of age. The mean hydraulic conductivity and UCS values of block field samples are inferior and have large variability than laboratory cured samples. Such variations are mainly because of heterogeneity caused by aggressive environment and impurities within the specimen. Consolidated undrained triaxial test found that under an effective confining pressure of less than 200 kPa, tension failure occurred since the minor principal stress dropped to zero value at failure. The research outcome is useful for understanding future liability of CB wall and improving their design. © 2009 IOS Press.

Robust stabilization of a nonlinear cement mill model

Plugging is well known to be a major cause of instability in industrial cement mills. A simple nonlinear model able to simulate the plugging phenomenon is presented. It is shown how a nonlinear robust controller can be designed in order to fully prevent the mill from plugging.

III-V compound semiconductor nanowires for optoelectronic device applications

GaAs and InP based III-V compound semiconductor nanowires were grown epitaxially on GaAs (or Si) (111)B and InP (111)B substrates, respectively, by metalorganic chemical vapor deposition using Au nanoparticles as catalyst. In this paper, we will give an overview of nanowire research activities in our group. In particular, the effects of growth parameters on the crystal structure and optical properties of various nanowires were studied in detail. We have successfully obtained defect-free GaAs nanowires with nearly intrinsic exciton lifetime and vertical straight nanowires on Si (111)B substrates. The crystal structure of InP nanowires, i.e., WZ or ZB, can also be engineered by carefully controlling the V/III ratio and catalyst size. © 2011 World Scientific Publishing Company.

III-V compound semiconductor nanowires

InP and GaAs based nanowires were grown epitaxially on InP or GaAs (111)B substrates by metalorganic chemical vapor deposition via vapor-liquid-solid (VLS) mechanism. In this report, I will give an overview of nanowire research activities in our group. In particular, the effects of growth parameters for InP and GaAs nanowires on the crystal quality have been studied in detail. We demonstrated the ability to obtain defect-free GaAs nanowires and control the crystal structure of InP nanowires, ie, WZ or ZB, by choosing a combination of growth parameters, such as temperature, V/III ratio and nanowire diameter. © 2009 IEEE NANO Organizers.